Tags: NEEDS node

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  1. NEEDS: Goals, Status, and Plans

    18 Mar 2016 | Presentation Materials | Contributor(s): Mark Lundstrom

    This is the opening talk for 2016 MAPP workshop at U.C. Berkeley. It gives an overview of the NEEDS node in 2016.

    https://nanohub.org/resources/23824

  2. Too hot to handle? The emerging challenge of reliability/variability in self-heated FintFET, ETSOI, and GAA-FET

    11 Jan 2016 | Presentation Materials | Contributor(s): Muhammad A. Alam, Sang Hoon Shin, Muhammad Abdul Wahab, Jiangjiang Gu, Jingyun Zhang, Peide "Peter" Ye

    This presentation is part of the 8th IEEE/ACM Workshop on Variability Modeling and Characterization (VMC) 2015. It is difficult to control the geometry, doping, and thicknesses of small...

    https://nanohub.org/resources/23372

  3. MAPP: The Berkeley Model and Algorithm Prototyping Platform

    11 Jan 2016 | Presentation Materials | Contributor(s): Tianshi Wang, Aadithya V Karthik, Jaijeet Roychowdhury

    This presentation is part of the 8th IEEE/ACM Workshop on Variability Modeling and Characterization (VMC) 2015. It provides an introduction to Berkeley Model and Algorithm Prototyping Platform...

    https://nanohub.org/resources/23370

  4. The NEEDS Initiative: Devices, Circuits, and Systems

    07 Jan 2016 | Presentation Materials | Contributor(s): Mark Lundstrom

    This presentation is part of the 8th IEEE/ACM Workshop on Variability Modeling and Characterization (VMC) 2015. This presentation provides an overview of the NEEDS initiative, which is funded...

    https://nanohub.org/resources/23365

  5. Advanced CMOS Device Physics for 7 nm and Beyond

    16 Dec 2015 | Presentation Materials | Contributor(s): Scott Thompson

    This presentation is part of 2015 IEDM tutorials The industry march along Moore's Law continues and new semiconductor nodes at 7 and beyond will certainly happen. However, many device,...

    https://nanohub.org/resources/23282

  6. Emerging CMOS Technology at 5 nm and Beyond: Device Options and Trade-offs

    14 Dec 2015 | Presentation Materials | Contributor(s): Mark Lundstrom, Xingshu Sun, Dimitri Antoniadis, Shaloo Rakheja

    Device Options and Trade-offs

    https://nanohub.org/resources/23273

  7. MATLAB: Negative Capacitance (NC) FET Model

    05 Dec 2015 | Downloads | Contributor(s): Muhammad Abdul Wahab, Muhammad A. Alam

    MATLAB model that calculates the Q-V, C-V, and I-V characteristics of the conventional MOSFET and NC-FET.

    https://nanohub.org/resources/23185

  8. A Tutorial Introduction to Negative-­Capacitor Landau Transistors: Perspectives on the Road Ahead

    04 Dec 2015 | Online Presentations | Contributor(s): Muhammad A. Alam

    In this talk, I use a simple graphical approach to demystify the device and explain why the experimental results are easy to misinterpret. Since the NC-FET is just a special case of a much broader...

    https://nanohub.org/resources/23157

  9. MVS Nanotransistor Model (Silicon)

    02 Dec 2015 | Compact Models | Contributor(s):

    By Shaloo Rakheja1, Dimitri Antoniadis1

    Massachusetts Institute of Technology (MIT)

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.

    https://nanohub.org/publications/15/?v=4

  10. MVS III-V HEMT model

    01 Dec 2015 | Compact Models | Contributor(s):

    By Shaloo Rakheja1, Dimitri Antoniadis1

    Massachusetts Institute of Technology (MIT)

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical...

    https://nanohub.org/publications/71/?v=1

  11. MVS Nanotransistor Model

    01 Dec 2015 | Compact Models | Contributor(s):

    By Shaloo Rakheja1, Dimitri Antoniadis1

    Massachusetts Institute of Technology (MIT)

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.

    https://nanohub.org/publications/74/?v=1

  12. VALint: the NEEDS Verilog-A Checker (BETA)

    21 Jan 2015 | Tools | Contributor(s): Xufeng Wang, Geoffrey Coram, Colin McAndrew

    Verilog-A lint and pretty printer created by NEEDS

    https://nanohub.org/resources/vachecker

  13. Thermoelectric Device Compact Model

    01 Sep 2015 | Compact Models | Contributor(s):

    By Xufeng Wang1, Kyle Conrad1, Jesse Maassen1, Mark Lundstrom1

    Purdue University

    The NEEDS thermoelectric compact model describes a homogeneous segment of thermoelectric material and serves as a basic building block for complex electrothermal system.

    https://nanohub.org/publications/80/?v=1

  14. Released Resonant Body Transistor with MIT Virtual Source (RBT-MVS) Model

    30 Aug 2015 | Compact Models | Contributor(s):

    By Bichoy W. Bahr1, Dana Weinstein1, Luca Daniel1

    Massachusetts Institute of Technology (MIT)

    An RBT is a micro-electromechanical (MEM) resonator with a transistor (FET) incorporated into the resonator structure to sense the mechanical vibrations. This is a fully-featured spice-compatible...

    https://nanohub.org/publications/72/?v=1

  15. III-V Tunnel FET Model

    20 Apr 2015 | Compact Models | Contributor(s):

    By Huichu Liu1, Vinay Saripalli1, Vijaykrishnan Narayanan1, Suman Datta1

    Penn State University

    The III-V Tunnel FET Model is a look-up table based model, where the device current and capacitance characteristics are obtained from calibrated TCAD Sentaurus simulation.

    https://nanohub.org/publications/12/?v=2

  16. mCell Model

    19 Jan 2015 | Compact Models | Contributor(s):

    By David M. Bromberg1, Daniel H. Morris1

    Carnegie Mellon University

    This model is a hybrid physics/empirical compact model that describes digital switching behavior of an mCell logic devices, where a write current moves a domain wall to switch the resistance of a...

    https://nanohub.org/publications/13/?v=2

  17. R3

    21 Nov 2014 | Compact Models | Contributor(s):

    By Colin McAndrew

    Freescale Semiconductor, Inc.

    Compact model for polysilicon (poly) resistors, 3-terminal JFETs, and diffused resistors.

    https://nanohub.org/publications/26/?v=1

  18. FET pH Sensor Model

    03 Nov 2014 | Compact Models | Contributor(s):

    By Piyush Dak1, Muhammad A. Alam1

    Purdue University

    The FET pH sensor model is a surface potential compact model for FET based pH sensors that accurately describes the physics of electrolyte and surface charges that respond to pH.

    https://nanohub.org/publications/11/?v=1

  19. Spin Switch Model

    23 Oct 2014 | Compact Models | Contributor(s):

    By Samiran Ganguly1, Kerem Yunus Camsari1, Supriyo Datta1

    Purdue University

    We present a circuit/compact model for the Spin Switch created using a Verilog-A based library of "spintronic lego blocks" building upon previous works on spin transport.

    https://nanohub.org/publications/21/?v=1

  20. Stanford University Resistive-Switching Random Access Memory (RRAM) Verilog-A Model

    23 Oct 2014 | Compact Models | Contributor(s):

    By Zizhen Jiang1, H.-S. Philip Wong1

    Stanford University

    The Stanford University RRAM Model is a SPICE-compatible compact model which describes switching performance for bipolar metal oxide RRAM.

    https://nanohub.org/publications/19/?v=1