Bandstructure Effects in Nano Devices With NEMO: from Basic Physics to Real Devices and to Global Impact on nanoHUB.org
08 Mar 2019 | | Contributor(s):: Gerhard Klimeck
This presentation will intuitively describe how bandstructure is modified at the nanometer scale and what some of the consequences are on the device performance.
For now this page is a rather empty place holder for references on nanoHUB to the OMEN tool.
There is a more complete OMEN web page that is maintained by the Nanoelectronic Modeling Group of Prof....
I am using OMEN to simulate Id-Vg characteristics for different Diameter of circular Nanowire FET. But the simulated unit of Id is Ampere, which I need to convert to μA/μm. How can I do that? please share the conversion relat
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OMEN Nanowire: solve the challenge
05 Feb 2011 | | Contributor(s):: SungGeun Kim
This document includes a challenging problems for OMEN Nanowire users. It challenges users to establish a nanowire transistor structure such that it satisfy the ITRS 2010 requirements.
OMEN Nanowire Homework Problems
24 Jan 2011 | | Contributor(s):: SungGeun Kim
OMEN Nanowire homework problems: anyone who has gone through the first-time user guide of OMEN Nanowire and done the examples in the guide should be able to run simulations in these homework problems and find the answers to them.
OMEN Nanowire Test Problems
This test is for students who have gone through the OMEN Nanowire first-time user guide and other learning materials related to nanowire FETs.
Nanoelectronic Modeling Lecture 41: Full-Band and Atomistic Simulation of Realistic 40nm InAs HEMT
05 Aug 2010 | | Contributor(s):: Gerhard Klimeck, Neerav Kharche, Neophytos Neophytou, Mathieu Luisier
This presentation demonstrates the OMEN capabilities to perform a multi-scale simulation of advanced InAs-based high mobility transistors.Learning Objectives:Quantum Transport Simulator Full-Band and Atomistic III-V HEMTs Performance Analysis Good Agreement with Experiment Some Open Issues...
Nanoelectronic Modeling Lecture 39: OMEN: Band-to-Band-Tunneling Transistors
05 Aug 2010 | | Contributor(s):: Gerhard Klimeck, Mathieu Luisier
This presentation discusses the motivation for band-to-band tunneling transistors to lower the power requirements of the next generation transistors. The capabilities of OMEN to model such complex devices on an atomistic representation is demonstrated.Learning Objectives:Band-To-Band Tunneling...
Nanotechnology Animation Gallery
22 Apr 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck
Animations and visualization are generated with various nanoHUB.org tools to enable insight into nanotechnology and nanoscience. Click on image for detailed description and larger image download. Additional animations are also...
OMEN Nanowire Demonstration: Nanowire Simulation and Analysis
11 Jun 2009 | | Contributor(s):: Gerhard Klimeck, Benjamin P Haley
This video shows the simulation and analysis of a nanowire using OMEN Nanowire. Several powerful analytic features of this tool are demonstrated.
OMEN Nanowire Supporting Document
23 Feb 2009 | | Contributor(s):: SungGeun Kim, Gerhard Klimeck, Mathieu Luisier
This material supplements the first-time user guide for OMEN Nanowire with details concerning the limitation of the tool at large gate voltage. At large gate voltage, the calculations of the drain current can be incorrect when the Poisson solver in OMEN does not converge. This problem is not...
OMEN Nanowire: First-Time User Guide
23 Feb 2009 | | Contributor(s):: SungGeun Kim, Benjamin P Haley, Mathieu Luisier, Saumitra Raj Mehrotra, Gerhard Klimeck
This is the first-time user guide for OMEN Nanowire. In addition to showing how the tool operates, it briefly explains what the OMEN Nanowire is, what it can do, and the input and output relationship.NCN@Purdue Sung Dae Suk, et. al., IEDM, 2005, "High Performance 5nm radius Twin Silicon...
02 Sep 2008 | | Contributor(s):: SungGeun Kim, Mathieu Luisier, Benjamin P Haley, Abhijeet Paul, Saumitra Raj Mehrotra, Gerhard Klimeck, Hesameddin Ilatikhameneh
Full-band 3D quantum transport simulation in nanowire structure