All Categories (1-20 of 56)

1. Modeling Sanning Probe Microscopes (SPM)

   06 Jan 2020 | | Contributor(s):: Woodward Maxwell, NNCI Nano

   The Modeling Scanning Probe Microscopes (SPM) lab is designed to show students the principles of how a Scanning Probe Microscope works and how mapping on a smaller scale provides a more detailed view of a surface. Students will use a conductivity apparatus to model the mapping behavior of an...

2. ANTSY—Assembly for Nanotechnology Survey Courses

   Welcome to ANTSY – Assembly for Nano Technology SurveY courses! This ANTSY support wiki page gathers educational materials that are related to the ANTSY tool. ANTSY assembles several...

   https://nanohub.org/wiki/antsy2

3. Bandstructure Effects in Nano Devices With NEMO: from Basic Physics to Real Devices and to Global Impact on nanoHUB.org

   08 Mar 2019 | | Contributor(s):: Gerhard Klimeck

   This presentation will intuitively describe how bandstructure is modified at the nanometer scale and what some of the consequences are on the device performance.

4. Electron Transport in Schottky Barrier CNTFETs

   24 Oct 2017 | | Contributor(s):: Igor Bejenari

   This resource has been removed at the request of the author.A given review describes models based on Wentzel-Kramers-Brillouin approximation, which are used to obtain I-V characteristics for ballistic CNTFETs with Schottky-Barrier (SB) contacts. The SB is supposed to be an exponentially...

5. Modeling of Inter-ribbon Tunneling in Graphene

   11 Nov 2016 | | Contributor(s):: Maarten Van de Put, William Gerard Hubert Vandenberghe, Massimo V Fischetti

   IWCE presentation. In this paper we investigate the finite-size effect in nano-scaled graphene flakes. Improving on the bulk description, and because the structures are – atomistically speaking – large in size, we use the empirical pseudopotential method[2].

6. NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool: From Basic Physics to Real Devices and to Global Impact on nanoHUB.org

   10 Nov 2016 | | Contributor(s):: Gerhard Klimeck

   The Nanoelectronic Modeling tool suite NEMO5 is aimed to comprehend the critical multi-scale, multi-physics phenomena and deliver results to engineers, scientists, and students through efficient computational approaches. NEMO5’s general software framework easily includes any kind of...

7. Auger Generation as an Intrinsic Limit to Tunneling Field-Effect Transistor Performance

   22 Sep 2016 | | Contributor(s):: Jamie Teherani

   Many in the microelectronics field view tunneling field-effect transistors (TFETs) as society’s best hope for achieving a > 10× power reduction for electronic devices; however, despite a decade of considerable worldwide research, experimental TFET results have significantly...

8. NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool

   19 Sep 2016 | | Contributor(s):: Gerhard Klimeck

   The Nanoelectronic Modeling tool suite NEMO5 is aimed to comprehend the critical multi-scale, multi-physics phenomena and deliver results to engineers, scientists, and students through efficient computational approaches. NEMO5’s general software framework easily includes any kind of...

9. E304 L6.2.2: Nanoelectrics - Tunneling

   04 May 2016 | | Contributor(s):: ASSIST ERC

10. Atomistic Modeling of Nano Devices: From Qubits to Transistors

    13 Apr 2016 | | Contributor(s):: Rajib Rahman

    In this talk, I will describe such a framework that can capture complex interactions ranging from exchange and spin-orbit-valley coupling in spin qubits to non-equilibrium charge transport in tunneling transistors. I will show how atomistic full configuration interaction calculations of exchange...

11. Tunnel FETs - Device Physics and Realizations

    10 Jul 2013 | | Contributor(s):: Joachim Knoch

    Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source contact will be elaborated on.

12. Inelastic Transport in Carbon Nanotube Electronic and Optoelectronic Devices

    28 Jun 2013 | | Contributor(s):: Siyu Koswatta

    Discovered in the early 1990's, carbon nanotubes (CNTs) are found to have exceptional physical characteristics compared to conventional semiconductor materials, with much potential for devices surpassing the performance of present-day electronics. Semiconducting CNTs have large carrier mobilities...

13. Uniform Methodology of Benchmarking Beyond-CMOS Devices

    31 Oct 2012 | | Contributor(s):: Dmitri Nikonov

    Multiple logic devices are presently under study within the Nanoelectronic Research Initiative (NRI) to carry the development of integrated circuits beyond the CMOS roadmap. Structure and operational principles of these devices are described.Theories used for benchmarking these devices are...

14. Energies and Lifetimes with Complex-Scaling

    02 Apr 2012 | | Contributor(s):: Daniel Lee Whitenack, Adam Wasserman

    Calculate the resonance energies and lifetimes of a user-defined potential with a uniform complex-scaling transformation.

15. NEMO5 Tutorial 6B: Device Simulation - Quantum Transport in GaSb/InAs Tunneling FET

    16 Jul 2012 | | Contributor(s):: Yu He

16. Tunneling

    29 Jul 2011 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    This set of slides describes the quantum-mechanical process for tunneling and how it is accounted for in modeling semiconductor devices. We explain WKB approximation, transfer matrix approach and the Tsu-Esaki formula for the calculation of the current.

17. Outdoing Maxwell’s Demon: Taming Molecular Wildness

    27 Apr 2011 | | Contributor(s):: Dudley R. Herschbach

    This talk describes these developments, illustrating means to analyze and control molecular trajectories and spatial orientation and to select rotational and vibrational states, with applications to elucidating chemical reaction dynamics.

18. Additional Tutorials on Selected Topics in Nanotechnology

    23 Mar 2011 | | Contributor(s):: Gerhard Klimeck, Umesh V. Waghmare, Timothy S Fisher, N. S. Vidhyadhiraja

    Select tutorials in nanotechnology, a part of the 2010 NCN@Purdue Summer School: Electronics from the Bottom Up.

19. Tutorial 4: Far-From-Equilibrium Quantum Transport

    23 Mar 2011 | | Contributor(s):: Gerhard Klimeck

    These lectures focus on the application of the theories using the nanoelectronic modeling tools NEMO 1- D, NEMO 3-D, and OMEN to realistically extended devices. Topics to be covered are realistic resonant tunneling diodes, quantum dots, nanowires, and Ultra-Thin-Body Transistors.

20. Tutorial 4a: High Bias Quantum Transport in Resonant Tunneling Diodes

    23 Mar 2011 | | Contributor(s):: Gerhard Klimeck

    Outline:Resonant Tunneling Diodes - NEMO1D: Motivation / History / Key InsightsOpen 1D Systems: Transmission through Double Barrier Structures - Resonant TunnelingIntroduction to RTDs: Linear Potential DropIntroduction to RTDs: Realistic Doping ProfilesIntroduction to RTDs: Relaxation Scattering...