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Atomistic Modeling of Nano Devices: From Qubits to Transistors
13 Apr 2016 | Online Presentations | Contributor(s): Rajib Rahman
In this talk, I will describe such a framework that can capture complex interactions ranging from exchange and spin-orbit-valley coupling in spin qubits to non-equilibrium charge transport in...
Tunnel FETs - Device Physics and Realizations
10 Jul 2013 | Online Presentations | Contributor(s): Joachim Knoch
Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source...
Inelastic Transport in Carbon Nanotube Electronic and Optoelectronic Devices
28 Jun 2013 | Papers | Contributor(s): Siyu Koswatta
Discovered in the early 1990's, carbon nanotubes (CNTs) are found to have exceptional physical characteristics compared to conventional semiconductor materials, with much potential for devices...
Uniform Methodology of Benchmarking Beyond-CMOS Devices
31 Oct 2012 | Online Presentations | Contributor(s): Dmitri Nikonov
Multiple logic devices are presently under study within the Nanoelectronic Research Initiative (NRI) to carry the development of integrated circuits beyond the CMOS roadmap. Structure and...
Energies and Lifetimes with Complex-Scaling
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25 Oct 2012 | Tools | Contributor(s): Daniel Lee Whitenack, Adam Wasserman
Calculate the resonance energies and lifetimes of a user-defined potential with a uniform complex-scaling transformation.
NEMO5 Tutorial 6B: Device Simulation - Quantum Transport in GaSb/InAs Tunneling FET
16 Jul 2012 | Online Presentations | Contributor(s): Yu He
30 Jul 2011 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck
This set of slides describes the quantum-mechanical process for tunneling and how it is accounted for in modeling semiconductor devices. We explain WKB approximation, transfer matrix approach and...
Outdoing Maxwell’s Demon: Taming Molecular Wildness
11 May 2011 | Online Presentations | Contributor(s): Dudley R. Herschbach
This talk describes these developments, illustrating means to analyze and control molecular trajectories and spatial orientation and to select rotational and vibrational states, with applications...
Additional Tutorials on Selected Topics in Nanotechnology
29 Mar 2011 | Workshops | Contributor(s): Gerhard Klimeck, Umesh V. Waghmare, Timothy S Fisher, N. S. Vidhyadhiraja
Select tutorials in nanotechnology, a part of the
2010 NCN@Purdue Summer School: Electronics from the Bottom Up.
Tutorial 4: Far-From-Equilibrium Quantum Transport
29 Mar 2011 | Courses | Contributor(s): Gerhard Klimeck
These lectures focus on the application of the theories using the nanoelectronic modeling tools NEMO 1- D, NEMO 3-D, and OMEN to realistically extended devices. Topics to be covered are realistic...
Tutorial 4a: High Bias Quantum Transport in Resonant Tunneling Diodes
29 Mar 2011 | Online Presentations | Contributor(s): Gerhard Klimeck
Resonant Tunneling Diodes - NEMO1D: Motivation / History / Key Insights
Open 1D Systems: Transmission through Double Barrier Structures - Resonant Tunneling
Introduction to RTDs:...
Tutorial 4c: Formation of Bandstructure in Finite Superlattices (Exercise Session)
How does bandstructure occur? How large does a repeated system have to be? How does a finite superlattice compare to an infinite superlattice?
Tutorial 4d: Formation of Bandstructure in Finite Superlattices (Exercise Demo)
Demonstration of the
Piece-Wise Constant Potential Barriers Tool.
ME 597 Lecture 1: Review of Quantum Tunneling/Introduction to STM
01 Sep 2010 | Online Presentations | Contributor(s): Ron Reifenberger
The STM – basic idea
Recommended Reading: See References below.
G. Binnig, H. Rohrer, Ch. Gerber, E. Weibel, “Tunneling through a controllable vacuum...
Resonant Tunneling Diode operation
22 Apr 2010 | Animations | Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck
A resonant tunneling diode (RTD) is a type of diode with a resonant tunneling structure that allows electrons to tunnel through various resonant states at certain energy levels. RTDs can be...
Simulation of the Spin Field Effect Transistors: Effects of Tunneling and Spin Relaxation on its Performance
05 Apr 2010 | Online Presentations | Contributor(s): Yunfei Gao
A numerical simulation of spin-dependent quantum transport for a spin field effect transistor
(spinFET) is implemented in a widely used simulator nanoMOS. This method includes the effect of...
Nanoelectronic Modeling nanoHUB Demo 2: RTD simulation with NEGF
09 Mar 2010 | Online Presentations | Contributor(s): Gerhard Klimeck
Demonstration of resonant tunneling diode (RTD) simulation using the RTD Simulation with NEGF Tool with a Hartree potential model showing potential profile, charge densities, current-voltage...
Nanoelectronic Modeling nanoHUB Demo 1: nanoHUB Tool Usage with RTD Simulation with NEGF
Demonstration of running tools on the nanoHUB. Demonstrated is the RTD Simulation with NEGF Tool using a simple level-drop potential model and a more realistic device using a Thomas-Fermi...
Nanoelectronic Modeling Lecture 26: NEMO1D -
NEMO1D demonstrated the first industrial strength implementation of NEGF into a simulator that quantitatively simulated resonant tunneling diodes. The development of efficient algorithms that...
Nanoelectronic Modeling Lecture 12: Open 1D Systems - Transmission through Double Barrier Structures - Resonant Tunneling
27 Jan 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Dragica Vasileska
This presentation shows that double barrier structures can show unity transmission for energies BELOW the barrier height, resulting in resonant tunneling. The resonance can be associated with a...