On the Resolution of Ultra-fast NBTI Measurements and Reaction-Diffusion Theory
Online Presentations | 30 Dec 2009 | Contributor(s): Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad A. Alam
Reaction-Diffusion (R-D) theory, well-known to successfully explain most features of NBTI stress, is perceived to fail in explaining NBTI recovery. Several efforts have been made to understand differences between NBTI relaxation measured using ultra-fast methods and that predicted by R-D theory....
Negative Bias Temperature Instability (NBTI) in p-MOSFETs: The Impact of Gate Insulator Processes (Part 2 of 3)
Online Presentations | 28 Mar 2012 | Contributor(s): Souvik Mahapatra
This presentation is part 2 on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner...
Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Predictive Modeling (Part 3 of 3)
This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner SiON...
Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Fast and Ultra-fast Characterization Methods (Part 1 of 3)
Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling (2011)
Online Presentations | 11 May 2011 | Contributor(s): Souvik Mahapatra
This is a presentation on Negative Bias Temperature Instability, or in short NBTI, observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to...
Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling
Courses | 28 Mar 2012 | Contributor(s): Souvik Mahapatra
Mobility Variation Due to Interface Trap Generation in Plasma Oxynitrided PMOS Devices
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Online Presentations | 30 Jun 2008 | Contributor(s): Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad A. Alam
Mobility degradation due to generation of interfacetraps, Δµeff(NIT), is a well-known phenomenon that has beentheoretically interpreted by several mobility models. Based onthese analysis, there is a general perception that Δµeff(NIT) isrelatively insignificant (compared to Δµeff due to...
Essential Aspects of Negative Bias Temperature Instability (NBTI)
Online Presentations | 01 May 2011 | Contributor(s): Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad Alam
We develop a comprehensive theoretical framework for explaining the key and characteristic experimental signatures of NBTI. The framework is based on an uncorrelated dynamics of interface-defect creation/annihilation described by Reaction-Diffusion (R-D) theory and hole trapping/detrapping...
BTI Simulator for Two-Stage Model
Downloads | 24 Jun 2017 | Contributor(s): Rakesh P Rao, Narendra Parihar, Souvik Mahapatra
This simulator calculates the kinetics associated with trapping and trap generation during Negative Bias Temperature Instability (NBTI) in SiO2 (or SiON) based Si p-MOSFETs. The calculations are based on the"Two-Stage Model". The simulator can calculate threshold voltage shift...
BTI Simulator for Two Well Thermionic Model
Downloads | 26 Aug 2016 | Contributor(s): Rakesh P Rao, Narendra Parihar, Sujay Desai, Souvik Mahapatra
This simulator calculates the kinetics associated with hole trapping in pre-existing gate insulator traps during Negative Bias Temperature Instability (NBTI) in SiO2 (or SiON) based Si p-MOSFETs. The calculations are based on the "Two Well Thermionic Model". The simulator can...
BTI Simulator for Two Well Non-radiative Multiphonon Model
Downloads | 31 Aug 2016 | Contributor(s): Rakesh P Rao, Narendra Parihar, Sujay Desai, Souvik Mahapatra
This simulator calculates the kinetics associated with hole trapping in pre-existing gate insulator traps during Negative Bias Temperature Instability (NBTI) in SiO2 (or SiON) based Si p-MOSFETs. The calculations are based on the"Two Well Non-radiative Multi-phonon Model". The...
BTI Simulator for Triple-Well Model
Downloads | 20 Sep 2016 | Contributor(s): Narendra Parihar, Rakesh P Rao, Sujay Desai, Souvik Mahapatra
This simulator calculates the kinetics associated with trap generation during Negative Bias Temperature Instability (NBTI) in SiO2 (or SiON) based Si p-MOSFETs. The calculations are based on the"Triple-Well Model". The simulator can calculate threshold voltage shift due to...
BTI Simulator for Multi-State Extended Non-radiative Multi-phonon Model (a.ka. Multi-State-Model)
Downloads | 20 Sep 2016 | Contributor(s): Rakesh P Rao, Narendra Parihar, Sujay Desai, Souvik Mahapatra
This simulator calculates the kinetics associated with hole trapping in pre-existing gate insulator traps during Negative Bias Temperature Instability (NBTI) in SiO2 (or SiON) based Si p-MOSFETs. The calculations are based on the"Multi-State Extended Non-radiative Multi-phonon...
BTI Simulator for Gate-sided Hydrogen Release (a.k.a Dispersive-Reaction) Model
Downloads | 20 Sep 2016 | Contributor(s): Narendra Parihar, Rakesh P Rao, Souvik Mahapatra
This simulator calculates the kinetics associated with hydrogen release from the Gate during Negative Bias Temperature Instability (NBTI) in SiO2 (or SiON) based Si p-MOSFETs. The calculations are based on the"Gate-sided Hydrogen Release (a.k.a Dispersive-Reaction) Model". The...
A Physical Model for Non-Ohmic Shunt Conduction and Metastability in Amorphous Silicon Solar Cells
Online Presentations | 15 Aug 2011 | Contributor(s): Sourabh Dongaonkar, Souvik Mahapatra, Karthik Yogendra, Muhammad Alam
In this talk we develop a coherent physics based understanding of the shunt leakage problem in a-Si:H cells, and discuss its implications on cell and module level.Sourabh Dongaonkar is with School of Electrical and Computer Engineering, Purdue University, West Lafayette, INKarthik Y and Souvik...