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MOSFet

By Shaikh S. Ahmed1, Saumitra Raj Mehrotra2, Matteo Mannino2, Gerhard Klimeck2, Dragica Vasileska3, Xufeng Wang2, Himadri Pal2, Gloria Wahyu Budiman2

1. Southern Illinois University Carbondale 2. Purdue University 3. Arizona State University

Simulates the current-voltage characteristics for bulk, SOI, and double-gate Field Effect Transistors (FETs)

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Version 1.8.5 - published on 01 Nov 2011

DOI: 10254/nanohub-r452.19 cite this

This tool is closed source.

First-Time User Guide View All Supporting Documents

Usage

Table 1: Overview
Item Average Total
Simulation Users: - 3,337
Interactive Sessions: - 14,463
Simulation Sessions: - 34,737
Simulation Runs: - 48,935
Wall Clock Time: 3.33 hours 4825.76 days
CPU time: 5.58 minutes 133.79 days
Interaction Time: 1.13 hours 1618.81 days

Table 2: Users By Organization Type
# Type Users Percent
1 Educational - University 2,857 85.62
2 Industry 198 5.93
3 Unidentified 146 4.38
4 National Lab 50 1.5
5 Unemployed 35 1.05
6 Educational - Unspec. Level 34 1.02
7 Government Agency 23 0.69
8 Educational - Pre-College 20 0.6
9 Military 7 0.21
10 Personal 5 0.15
Total Users 3,337 100
Table 3: Users by Country of Residence
# Country Users Percent
1 UNITED STATES 1,616 48.43
2 INDIA 301 9.02
3 SWEDEN 200 5.99
4 CHINA 109 3.27
5 TAIWAN 95 2.85
6 KOREA, REPUBLIC OF 75 2.25
7 GERMANY 62 1.86
8 EGYPT 50 1.5
9 COLOMBIA 46 1.38
10 BANGLADESH 42 1.26
Total Users 3,337 100
Table 4: Top Domains by User Count
# Domains Users Percent
1 Unidentified 1,029 30.84
2 comcast.net 216 6.47
3 purdue.edu 205 6.14
4 siu.edu 163 4.88
5 kth.se 126 3.78
6 rr.com 125 3.75
7 mchsi.com 100 3
8 verizon.net 90 2.7
9 cox.net 77 2.31
10 swipnet.se 58 1.74
Total Users 3,337 100

Location of all "MOSFet" Users Since Its Posting

Map

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