MOSFet

By Shaikh S. Ahmed1; Saumitra Raj Mehrotra2; SungGeun Kim2; Matteo Mannino2; Gerhard Klimeck2; Dragica Vasileska3; Xufeng Wang2; Himadri Pal2; Gloria Wahyu Budiman2

1. Southern Illinois University Carbondale 2. Purdue University 3. Arizona State University

Simulates the current-voltage characteristics for bulk, SOI, and double-gate Field Effect Transistors (FETs)

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Version 1.9.1 - published on 06 Dec 2017

doi:10.4231/D34T6F54G cite this

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First-Time User Guide View All Supporting Documents

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824 Will it be possible to separate the variable “Source/Drain Doping Concentration” into two different variables?
Proposed by Adelmo Ortiz Conde @
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34 use interactive 2d potential viewer
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