Semiconductor Device Theory Exercises
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ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors Development Group
This resource belongs to the ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors Development Group group.
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Abstract
This collection of problems should help the students to better understand Semiconductor Device Physics on a fundamental and more complex level.
- Crystal lattices and Miller indicies
- From 1 well to 2 wells to 5 wells to periodic potentials
- Periodic potentials and bandstructure
- Bandstructure exercise
- Simplified bandstructure model
- Can we define unique effective masses in Si nanowires?
- Density of states function calculation
- Dopants and semiconductor statistics
- General tool construction for degenerate/nondegenerate semiconductors that includes partial ionization of the dopants
- Conductivity exercise
- Hall effect
- Basic operation of pn diode
- PN diode and Series resistance
- Advanced theoretical exercise on operation of pn diode
- Non-idealities in a PN Diode
- Short vs. Long Diode
- PIN diode
- PN diode and Graded junction
- Schottky diode and Theoretical exercise
- BJT -Theoretical exercise
- BJT -Simulation exercise
- BJT simulation with PADRE
- BJT Lab - Theoretical Exercise
- BJT Lab - h-parameters calculation exercise
- MOS Capacitors - Theoretical Exercise 1
- MOS Capacitors - Theoretical Exercise 2
- CV curves for MOS capacitors
- High frequency CV curves
- Interface and Oxide Charges
- MOS Capacitors - Theoretical Exercise 3
- MOS Capacitors - SCHRED exercise 1
- MOS Capacitors - SCHRED exercise 2
- MOS Capacitors - SCHRED exercise 3
- MOSFET - Theoretical exercise
- MOSFET - Simulation exercise
- MOSFET - Quantum mechanical reflections in nanodevices
- Long Channel vs. Short Channel MOSFET device
- DIBL effect
- Basic operation of n-channel SOI device
- FD vs. PD SOI devices - Kink effect
- MESFET - Theoretical exercise
- MESFET - Simulation exercise
- MESFET - Theoretical Exercise
- MESFET - Simulation Exercise
- Heterostructures
- HEMT -Theoretical exercise
- HEMT -� Simulation exercise
Cite this work
Researchers should cite this work as follows:
Dragica Vasileska and S. M. Goodnick, Computational Electronics, Morgan and Claypool, 2006.-
Dragica Vasileska; Gerhard Klimeck; Mark Lundstrom (2008), "Semiconductor Device Theory Exercises," https://nanohub.org/resources/5170.