Tags: MOSFET

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Description

The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.

Tools (1-14 of 14)

  1. Silvaco TCAD

    28 Sep 2022 | | Contributor(s):: Eric Guichard, Silvaco, Inc.

    SILVACO Semiconductor Process and Device Simulation for Educational Purposes Only, see License below.

  2. Compact NEGF-Based Solver for Double-Gate MOSFETs

    17 Nov 2020 | | Contributor(s):: Fabian Hosenfeld, Alexander Kloes

    Fast simulation of the DC current in a nanoscale double-gate MOSFET including thermionic emission and source-to-drain tunneling current.

  3. MOS Simulator

    25 Jun 2019 | | Contributor(s):: Biswajeet Sahoo

    National Institute of Technology,Rourkela. This is an Interactive tool for the simulation of the MOS electrostatics by varying the different parameters given in the sliders and input boxes

  4. MOSFET Simulation

    04 Oct 2013 | | Contributor(s):: Chen Shang, Sankarsh Ramadas, Tanya Faltens, derrick kearney, Krishna Madhavan

    Displays drain current as a function of source-drain voltage for different values of gate voltage, gate dimensions, substrate material, and oxide material in an n-type MOSFET.

  5. MIT Virtual-Source Tool

    07 Aug 2012 | | Contributor(s):: Xingshu Sun, Xufeng Wang, Yubo Sun, Mark Lundstrom

    Virtual Source Model for MOSFET compact modeling

  6. FETToy

    14 Feb 2006 | | Contributor(s):: Anisur Rahman, Jing Wang, Jing Guo, Md. Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom

    Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs

  7. OMEN Nanowire

    02 Sep 2008 | | Contributor(s):: SungGeun Kim, Mathieu Luisier, Benjamin P Haley, Abhijeet Paul, Saumitra Raj Mehrotra, Gerhard Klimeck, Hesameddin Ilatikhameneh

    Full-band 3D quantum transport simulation in nanowire structure

  8. ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors

    16 Jul 2008 | | Contributor(s):: Xufeng Wang, Daniel Mejia, Dragica Vasileska, Gerhard Klimeck

    One-stop-shop for teaching semiconductor devices

  9. Medici

    13 May 2004 | | Contributor(s):: Steven Clark

    MEDICI (Synopsys)

  10. PETE : Purdue Emerging Technology Evaluator

    26 Jun 2007 | | Contributor(s):: Arijit Raychowdhury, Charles Augustine, Yunfei Gao, Mark Lundstrom, Kaushik Roy

    Estimate circuit level performance and power of novel devices

  11. Illinois Tools: MOCA

    28 Mar 2007 | | Contributor(s):: Mohamed Mohamed, Umberto Ravaioli, Nahil Sobh, derrick kearney, Kyeong-hyun Park

    2D Full-band Monte Carlo (MOCA) Simulation for SOI-Based Device Structures

  12. Modeling Interface-defect Generation (MIG)

    18 Jul 2006 | | Contributor(s):: Ahmad Ehteshamul Islam, HALDUN KUFLUOGLU, Muhammad A. Alam

    Analyzes device reliability based on NBTI

  13. NanoMOS

    19 May 2006 | | Contributor(s):: , Sebastien Goasguen, Akira Matsudaira, Shaikh S. Ahmed, Kurtis Cantley, Yang Liu, Yunfei Gao, Xufeng Wang, Mark Lundstrom

    2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs

  14. MOSFet

    30 Mar 2006 | | Contributor(s):: Shaikh S. Ahmed, Saumitra Raj Mehrotra, SungGeun Kim, Matteo Mannino, Gerhard Klimeck, Dragica Vasileska, Xufeng Wang, Himadri Pal, Gloria Wahyu Budiman

    Simulates the current-voltage characteristics for bulk, SOI, and double-gate Field Effect Transistors (FETs)