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ECE 612 Lecture 20: Broad Overview of Reliability of Semiconductor MOSFET
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14 Nov 2008 | | Contributor(s):: Muhammad A. Alam
Guest lecturer: Muhammad A. Alam.
PRISM Seminar Series
05 Nov 2008 | | Contributor(s):: Jayathi Murthy, Alejandro Strachan
Welcome to the PRISM Seminar Series.PRIMS: NNSA Center for Prediction of Reliability, Integrity and Survivability of Microsystems, is a university center funded by the Department of Energy's National Nuclear Security Administration (NNSA) under their Advanced Simulation and Computing (ASC)...
From density functional theory to defect level in silicon: Does the “band gap problem” matter?
01 Oct 2008 | | Contributor(s):: Peter A. Schultz
Modeling the electrical effects of radiation damage in semiconductor devices requires a detailed description of the properties of point defects generated during and subsequent to irradiation. Such modeling requires physical parameters, such as defect electronic levels, to describe carrier...
Reliability Physics of Nanoscale Transistors
27 Nov 2007 | | Contributor(s):: Muhammad A. Alam
This course is now offered on nanoHUB as ECE 695A Reliability Physics of Nanotransistors.
Modeling Interface-defect Generation (MIG)
18 Jul 2006 | | Contributor(s):: Ahmad Ehteshamul Islam, HALDUN KUFLUOGLU, Muhammad A. Alam
Analyzes device reliability based on NBTI