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09 Demonstration of Vertical GaN PN Diode with Step-etched Triple zone JTE
Online Presentations | 14 Oct 2020 | Contributor(s): Hyun-Soo Lee, Yuxuan Zhang, Zhaoying Chen, Mohammad Wahidur Rahman, Hongping Zhao, Siddharth Rajan | 175 users
We have demonstrated significantly improved BV of vertical GaN PN diode with STJTE without any degradation of forward characteristics. This is the first demonstration of a step-etched multiple zone edge termination for III-Nitride technology.
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25 Linearity by Synthesis: An Intrinsically Linear AlGaN/GaN-on-Si Transistor with OIP3/(F-1)PDC of 10.1 at 30 GHz
Online Presentations | 21 Sep 2020 | Contributor(s): Woojin Choi, Venkatesh Balasubramanian, Peter M. Asbeck, Shadi Dayeh | 101 users
The concept of an intrinsically synthesizable linear device is demonstrated. It was implemented by changing only the device layout; additional performance gains can be attained by further materials engineering.
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30 Hydrogen-Terminated diamond FET and GaN HEMT delivering CMOS Inverter Operation at High-Temperature
Online Presentations | 21 Sep 2020 | Contributor(s): Chenhao Ren, Mohamadali Malakoutian, Siwei Li, Srabanti Chowdhury | 154 users
Day 2 Session 3.4Introduction: An increasing number of applications in power electronics, sensor signal conditioning, and RF communication are demanded to operate beyond 200°C (e.g., engine and geothermal wellbore monitoring). These applications require integrated circuits such as...
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39 Thermal Engineering of Volatile Switching in PrMnO3 RRAM: Non-Linearity in DC IV Characteristics and Transient Switching Speed
Online Presentations | 21 Sep 2020 | Contributor(s): Jayatika Sakhuja, Sandip Lashkare, Vivek Saraswat, Udayan Ganguly | 71 users
This study is the first-time analysis of heating and cooling timescales together demonstrating voltage as well as frequency scaling for different voltage regimes w.r.t. different device stacks. Thus, an electro-thermal speed engineering study is critical for RRAM devices to model elements of...
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A3 Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics
Online Presentations | 18 Sep 2020 | Contributor(s): Yury Yuryevich Illarionov, A.G. Banshchikov, Theresia Knobloch, D.K. Polyushkin, S. Wachter, V.V. Fedorov, M. Stöger-Pollach, M.I. Vexler, N.S. Sokolov, T. Grasser | 84 users
We fabricated high-quality crystalline 1−2nm CaF2 films and successfully used them for MoS2 FETs with record-thin gate insulators. For the first time we demonstrated MoS2 FETs with simultaneously sub-1nm EOT insulators and sub-100nm channel length and found that these devices can exhibit...
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05 Ferroelectric Devices for Compute-in-Memory: Array-Level Operations
Online Presentations | 18 Sep 2020 | Contributor(s): Shimeng Yu, Panni Wang | 317 users
Doped HfO2 based ferroelectric field-effect transistors (FeFETs) are being actively explored as emerging nonvolatile memory devices with the potential for compute-in-memory (CIM) paradigm. In this work, we explored the feasibility of array-level operations of FeFET in the context of in-situ...
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12 The Influence of the Gate Trench Orientation to the crystal Plane on the Conduction Properties of Vertical GaN MISFETs for Laser Driving Applications
Online Presentations | 18 Sep 2020 | Contributor(s): E. Bahat Treidel, O. Hilt, H. Christopher, A. Klehr, A. Ginolas, A. Liero, J. Würfl | 27 users
In this work the development of vertical GaN MISFET technology is focused on pulsed laser driving applications with maximum voltages < 100 V (Fig. 1). Drivers for pulsed lasers are required to deliver very high currents up to 250 A in very short pulse lengths of 3 ns to 10 ns [4].
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47 Electrostatic Engineering in BaTiO3/β-Ga2O3 Heterostructure Field Effect Transistors
Online Presentations | 14 Oct 2020 | Contributor(s): Nidhin Kurian Kalarickal, Zhanbo Xia, Wyatt Moore, Joe McGlone, Aaron R. Arehart, Steven A. Ringel, Siddharth Rajan | 113 users
We report on the design and demonstration of BaTiO3/β-Ga2O3 based lateral field effect transistors with superior breakdown performance. Utilizing the high-k low-k dielectric interface allows significant improvement in electrostatic field management giving a breakdown voltage of 1.1 KV at 5...