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Radiation Effects and Hardening Techniques for Analog and Mixed-Signal Integrated Circuits

These are PDF files of presentation slides used in ECE 6304 at Vanderbilt University.  These slides provide an overview of techniques used to harden analog and mixed-signal circuits against total dose and single-event radiation effects.

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Stopping Range of Ions in Matter - Querying the SIT Tool

Query data found within the database that is populated and regulated by the SIT tool.

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Matlab Coding and Data Analysis in the Context of Radiation Hardening

Learn Matlab coding within the context of Radiation Hardening problems.

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MSEML: Machine Learning for Materials Science Tool on nanoHUB

This talk is a hands-on demonstration using the nanoHUB tool Machine Learning for Materials Science: Part 1.

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Data Science and Machine Learning for Materials Science

This talk covers the fundamentals of machine learning and data science, focusing on material science applications. The talk is for a general audience, attempting to introduce basic concepts such as linear regression, supervised learning with neural networks including forward and back…

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Solar Cells Lecture 1: Introduction to Photovoltaics

An introduction to solar cells covering the basics of PN junctions, optical absorption, and IV characteristics. Key technology options and economic considers are briefly presented.

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Battery Optimization

Tool for modeling Porous Lithium-Ion Batteries for optimization and uncertainty quantification.

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Padre

2D/3D devices under steady state, transient conditions or AC small-signal analysis

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Publish Your Content on nanoHUB

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MSE 376 Lecture 12: Nanoscale CMOS, part 1

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MSE 376 Lecture 13: Nanoscale CMOS, part 2

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CMOS-Nano Hybrid Technology: a nanoFPGA-related study

Dr. Wei Wang received his PhD degree in 2002 from Concordia University, Montreal, QC, Canada, in Electrical and Computer Engineering. From 2002 to 2004, he was an assistant professor in the Department of Electrical and Computer Engineering, the University of Western Ontario, London, ON, Canada. From 2005 to 2007, he was with the Department of Electrical and Computer Engineering, Indiana University – Purdue University Indianapolis. From Dec. 2007, Professor Wang joined the faculty of College …

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MOSFET Lab - Scaling

The concept of device scaling and the need to control short channel effects is used in this real life problem

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ECE 606 Lecture 24: MOSFET Non-Idealities

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ECE 606 Lecture 23: MOSFET I-V Characteristics/MOSFET Non-Idealities

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ECE 606 Lecture 22: MOScap Frequence Response/MOSFET I-V Characteristics

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ECE 606 Lecture 25: Modern MOSFETs

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Exploring New Channel Materials for Nanoscale CMOS

The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the performance of nanoscale CMOS devices. Novel process techniques, such as ALD, high-# dielectrics, and metal gates are now being used to experimentally explore such devices. New materials in the channel promise reduced series resistance and higher on-currents. The theoretical assessment of such devices …

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MOSFET Simulation

Displays drain current as a function of source-drain voltage for different values of gate voltage, gate dimensions, substrate material, and oxide material in an n-type MOSFET.

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Tunnel FETs - Device Physics and Realizations

Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source contact will be elaborated on.

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Moore’s Law Extension and Beyond

In his talk, Ye will review his research efforts at Purdue on materials, structures and device architecture to support the microelectronic industry and extend Moore’s Law. The goal of the research is that it will lead to smarter, ubiquitous computing technology and keep us healthier,…

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Chapter 1: A Primer on the MOSFet Simulator on nanoHUB.org

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ECE 606 L30.3: MOSFET Introduction - Velocity Saturation in Simplified Theory

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ECE 606 L30.2: MOSFET Introduction - Above-Threshold, Inversion Current

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ECE 606 L30.1: MOSFET Introduction - Sub-Threshold (Depletion) Current

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