Collections

In his talk, Ye will review his research efforts at Purdue on materials, structures and device architecture to support the microelectronic industry and extend Moore’s Law. The goal of the research is that it will lead to smarter, ubiquitous computing technology and keep us healthier,…

2 reposts

Profile picture of Md Mehedi Hasan

Md Mehedi Hasan onto PPT

2 reposts

Profile picture of Md Mehedi Hasan

Md Mehedi Hasan onto PPT

In this module, you will learn how to predict bulk modulus using machine learning.

3 reposts

Profile picture of Md Mehedi Hasan

Md Mehedi Hasan onto Others and extra

Simulate Electron transport in Single-walled carbon nanotubes using an upwinding discretization of the Boltzmann transport equation in the relaxation time approximation.

12 reposts

Profile picture of Md Mehedi Hasan

Md Mehedi Hasan onto Others and extra

Simulate 2-D electrons transport in CNTFET

11 reposts

Profile picture of Md Mehedi Hasan

Md Mehedi Hasan onto MOSFET

Understanding the effect of silicon doping, oxide (SiO2) thickness, gate type (n+poly/p+poly), and semiconductor type (n-type/p-type) on the flatband voltage, threshold voltage, surface potential and oxide voltage of a MOS-Capacitor.

4 reposts

Profile picture of Md Mehedi Hasan

Md Mehedi Hasan onto MOSFET

Calculate and observe the relationship between current, voltage, resistance, and power.

3 reposts

Profile picture of Md Mehedi Hasan

Md Mehedi Hasan onto Others and extra

Simulate the electrical and thermal properties of a graphene field-effect transistor.

12 reposts

Profile picture of Md Mehedi Hasan

Md Mehedi Hasan onto Thesis

Simulate density of states, carrier statistics, and carrier concentrations in two-dimensional semiconductors and graphene

3 reposts

Profile picture of Md Mehedi Hasan

Md Mehedi Hasan onto Thesis

Simulate the nanoscale multigate-FET structures (finFET and nanowire) using drift diffusion approaches

21 reposts

Profile picture of Md Mehedi Hasan

Md Mehedi Hasan onto Others and extra

Plotting of DC and AC characteristics of DG-Tunnel-FETs using equations of the corresponding Verilog-A compact model THM-TFET.

2 reposts

Profile picture of Md Mehedi Hasan

Md Mehedi Hasan onto Others and extra

TSUPREM-4 is a computer program for simulating the processing steps used in the manufacture of silicon integrated circuits and discrete devices.

4 reposts

Profile picture of Md Mehedi Hasan

Md Mehedi Hasan onto Others and extra

Analyzes device reliability based on NBTI

6 reposts

Profile picture of Md Mehedi Hasan

Md Mehedi Hasan onto Others and extra

Virtual Source Model for MOSFET compact modeling

7 reposts

Profile picture of Md Mehedi Hasan

Md Mehedi Hasan onto MOSFET

Capacitance of a MOS device

42 reposts

Profile picture of Md Mehedi Hasan

Md Mehedi Hasan onto MOSFET

A 2D Full-band Monte Carlo (MOCA) Simulation of SOI Device Structures

8 reposts

Profile picture of Md Mehedi Hasan

Md Mehedi Hasan onto Others and extra