Intro to MOS-Capacitor Tool

By Emmanuel Jose Ochoa1; Stella Quinones1

1. University of Texas at El Paso

Understanding the effect of silicon doping, oxide (SiO2) thickness, gate type (n+poly/p+poly), and semiconductor type (n-type/p-type) on the flatband voltage, threshold voltage, surface potential and oxide voltage of a MOS-Capacitor.

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Version 1.5 - published on 11 Aug 2014

doi:10.4231/D3BG2HB3Z cite this

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Abstract

Use the Intro to MOS-C tool to model the device physics and electrostatic variables as a function of silicon doping, oxide (SiO2) thickness, gate type (n+poly/p+poly), and semiconductor type (n-type/p- type). The relationship between flatband voltage, threshold voltage, maximum depletion width and maximum surface potential can be emphasized by instructor assignment design.

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NCN UTEP Research Team

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The University of Texas at El Paso On-Campus Student Employment Program

References

C. C. Hu, Modern Semiconductor Devices for Integrated Circuits. Upper Saddle River, NJ: Pearson, 2010.

Cite this work

Researchers should cite this work as follows:

  • Emmanuel Jose Ochoa, Stella Quinones (2014), "Intro to MOS-Capacitor Tool," https://nanohub.org/resources/mosctool. (DOI: 10.4231/D3BG2HB3Z).

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Tags

  1. capacitors
  2. device electronics
  3. device physics
  4. MOS-C
  5. MOS capacitors
  6. nanoelectronics
  7. NCN Group - Semiconductor Device Physics