The MOSFet simulator on nanoHUB.org (http://nanohub.org/resources/mosfet) simulates the equilibrium electrostatics and non-equilibrium current-voltage (I-V) characteristics of i) bulk, ii) dual-gate, and iii) SOI based field effect transistors. In this chapter, we will describe: i) the structure and basic operational principle of MOSFETs; ii) the physical models used in the MOSFET simulator; iii) the graphical user interface (GUI) and how to prepare the input decks for a device with specific geometry, numerical meshing, a set of model parameters, temperature, and biasing; iv) simulation outputs and post-processing options; and v) the limitations as well as the scopes for improvement of the simulator. The Chapter, from a classical viewpoint, is expected to help the users better understand the technologically important figures-of-merit (FOM) associated with both conventional and emerging FETs, extract the parameters of interest from the simulation results, and shed light on how to design FETs for improved performance.

Researchers should cite this work as follows:

• Abdussamad Ahmed Muntahi, Dragica Vasileska, Shaikh S. Ahmed (2020), "Chapter 1: A Primer on the MOSFet Simulator on nanoHUB.org," https://nanohub.org/resources/32887.

  BibTex | EndNote

1. bulk semiconductors
2. computational electronics
3. device modelling and simulation
4. I-V curves/characteristics
5. MOSFET
6. nanoelectronics
7. NCN Group - Nanoelectronics
8. SOI devices
9. soi mosfets