Organization
Institute of Physical Problems
Rostislav Vladimirovich Lapshin
Profile
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Biography
Term: January 1996 – present
Employer: Institute of Physical Problems named after F. V. Lukin
Department: Nanoelectronics
Laboratory: Solid Nanotechnology
Address: passage 4806, bldg. 6, Zelenograd, Moscow, 124460, Russian Federation
Field: Scanning probe microscopy and nanotechnology
Position: Staff scientist
Activities: As SPM-microscopist, participated in experimental STM/AFM investigations (ambient, low-energy plasma, HV, and UHV environments) of porous Si surface, GaAlAs heterostructures, ordered SiO2 nanoparticles (photonic crystals), SiNbN superconductor microwave sensor, nanostructured electrochemically-polished Al, ordered porous Al2O3, Pd clusters, carbon nanotubes (CNT), surface ordered structures (MePhSiCl2, VOCl3, TiCl4) and other materials. Researched feature formation by local probe oxidation of thin films (Ti, Zr, WC, MoC, etc.) and by indenting a probe into plastic surface (Au, Al, Cu, polycarbonate, Langmuir-Blodgett film, etc.) to develop a record medium for a large capacity probe storage device (PSD). Made critical probe nanolithography to form a junction of a field-effect nanotransistor. Conducted investigations of thin carbon films plasma-deposited on low-density polyethylene (LDPE), polyurethane (PU), and poly(methyl methacrylate) (PMMA) in order to improve biocompatibility of artificial human implants (blood-vessels, crystalline lens, mitral valves, etc.) fabricated of these materials.
Researched influence of vacuum ultraviolet (VUV) on surface morphology and properties of poly(methyl methacrylate). Investigated nanostructuring of spin-coated poly(methyl methacrylate) film in oxygen RF-plasma. Studied pores formation in highly oriented pyrolytic graphite (HOPG) treated in oxygen RF-plasma. Investigated formation of quantum dots of C, Ni, Si on Si(100) and Si(111) substrates in glow-discharge Ar-plasma. Developed a deposition process of catalytic Ni nanoparticles on Si(100) substrate that made possible a low-temperature synthesis of carbon nanostructures (CNS), viz. carbon nanotubes (CNT), carbon nanofibers (CNF), carbon nanospheres (CNS), and carbon nanotori by plasma-enhanced chemical vapor deposition (PECVD) method.
As SPM-developer, solved task of automatic scanner calibration by natural standards such as crystalline lattices. Elaborated a simple readback method for a probe storage device, which memory bits were represented by single atoms/molecules. Suggested a feature-oriented scanning-positioning methodology intended for implementation of high precision SPM-measurements, automatic surface characterization and unmanned bottom-up nanofabrication. Developed an automatic drift correction method built on techniques of counter-scanning and topography feature recognition. Built up an AFM-based setup and conduct measurements of bimaterial microcantilevers used as room-temperature IR-sensors. Formulated operation principles, suggested construction, and control methods of a high-precision versatile walking robot-nanopositioner intended for use in SPM and various nanotechnological processes. Developed a method for automatic distributed calibration of probe microscope scanner in nanometer range.
Term: February 1990 – January 1996
Employer: “Delta” Microelectronics and Nanotechnology Research Institute
Department: Nanotechnology
Laboratory: Scanning Tunneling Microscopy
Address: 2 Schelkovskoye shosse, Moscow, 105122, Russian Federation
Field: Scanning tunneling microscopy
Position: Researcher
Activities: Worked on a fast-acting scanning tunneling microscope (STM), in particular, a fast-acting digital control system intended for tunnel junction stabilization. Developed a method correcting STM piezoscanner nonlinearity and hysteresis. Within bounds of the above tasks carried out: formulation of technical requirements; prototype analysis; working-out of instrument concept and basic architecture solutions; building of a math model; engineering calculations and estimates; synthesis of flow-charts and operation algorithms; design of principle digital schemes (logic, ADC, DAC, i/o interface, embedded microcontroller); writing and debugging of a program kernel for microscope low-level control; design of calibration and self-testing routines; assemblage and test of the experimental STM.
Term: April 1988 – September 1989
Employer: Moscow State Technical University named after N. E. Bauman
Faculty: Computer Science and Control Systems
Department: Development and process engineering of electronic apparatus
Ad hoc creative team: “Rhythm”
Address: 2-ya Baumanskaya St., bldg. 5, Moscow, 107005, Russian Federation
Field: Precision mechanics
Position: Engineer
Activities: Developed a specialized equipment to balance video rotary heads of a tape recorder. Dealt with measurement automation, math data processing and sensor conjugation with a local controller.