Stanford University Resistive-Switching Random Access Memory (RRAM) Verilog-A Model 1.0.0
The Stanford University RRAM Model is a SPICE-compatible compact model which describes switching performance for bipolar metal oxide RRAM.
Listed in Compact Models | publication by group NEEDS: New Era Electronic Devices and Systems
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Version 1.0.0 - published on 23 Oct 2014 doi:10.4231/D37H1DN48 - cite this
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NEEDS: New Era Electronic Devices and Systems
This publication belongs to the NEEDS: New Era Electronic Devices and Systems group.