A ferroelectric tunnel junction (FTJ) is a type of nonvolatile memory device, whose memory state depends on the electric polarization direction of a thin ferroelectric (FE) material layer between two electrodes. Conventionally, a FTJ device has bulk metal or very heavily doped semiconductor as contacts. On the other hand, recent development of 2D materials permit achieving ultrathin 2D material FE layer and vertically stacked heterojunction. For example, in a vertically stacked graphene (GR)-FE-metal structure, a FTJ memory device can be achieved. In this model, a compact model of the FTJ device is constructed, using the Wentzel–Kramers–Brillouin (WKB) approximation for tunneling current calculation, and the potential profile of the device is calculated by developing and analytically solving a self-consistent electrostatic capacitance model. The model can flexible simulat either (i) a GR-FE-metal FTJ device and (b) a metal-FE-metal FTJ device. The model is coded in Verilog-A. The netlist file of corresponding sample circuit is tested in Spectre.

• Florida Ferroelectric Tunnel Junction Device Model 1.0.0 Verilog-A(VA | 8 KB)
• Florida Ferroelectric Tunnel Junction Device Model 1.0.0 Benchmarks(RAR | 108 KB)
• Florida Ferroelectric Tunnel Junction Device Model 1.0.0 Parameters(CSV | 1 KB)
• Florida Ferroelectric Tunnel Junction Device Model 1.0.0 Manual(PDF | 1 MB)
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Researchers should cite this work as follows:

• Wu, T.; Guo, J. (2020). Florida Ferroelectric Tunnel Junction Device Model. nanoHUB. doi:10.21981/6TFD-GW48

  BibTex | EndNote

1. Compact Model
2. ferroelectrics
3. graphene
4. WKB Apprximation