Stanford Virtual-Source Carbon Nanotube Field-Effect Transistors Model

Name: Stanford Virtual-Source Carbon Nanotube Field-Effect Transistors Model
Published: 2015-04-08
License: NEEDS Modified CMC License

Chi-Shuen Lee; H.-S. Philip Wong

doi:10.4231/D3BK16Q68

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Stanford Virtual-Source Carbon Nanotube Field-Effect Transistors Model 1.0.1

By Chi-Shuen Lee¹, H.-S. Philip Wong¹

Stanford University

The VSCNFET model captures the dimensional scaling properties and includes parasitic resistance, capacitance, and tunneling leakage currents. The model aims for CNFET technology assessment for the sub-10-nm technology nodes.

Listed in Compact Models | publication by group NEEDS: New Era Electronic Devices and Systems

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Version 1.0.1 - published on 09 Apr 2015 doi:10.4231/D3BK16Q68 - cite this

Licensed under NEEDS Modified CMC License according to these terms

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