UCSB GNR interconnect model is based on a distributed RLC circuit, in which carrier mean free path, graphene doping concentration (Fermi level) and number of layers are considered. The model was originally published by our group in (Xu, Chuan et al. TED 2009). Using a simple tight-binding model and the linear response Landauer formula, the resistance per unit length of GNR is derived. In addition to the resistance, the quantum capacitance, kinetic inductance and quantum contact resistance are considered. This model is compatible with both DC and transient simulations. Current version of the model only supports the model of armchair GNR (ac-GNR), and only complete diffusive edge (edge specularity p = 0). 

• UCSB Graphene Nanoribbon Interconnect Compact Model 1.0.0 Verilog-A(VA | 8 KB)
• UCSB Graphene Nanoribbon Interconnect Compact Model 1.0.0 Benchmarks(ZIP | 184 KB)
• UCSB Graphene Nanoribbon Interconnect Compact Model 1.0.0 Parameters(PDF | 9 KB)
• UCSB Graphene Nanoribbon Interconnect Compact Model 1.0.0 Manual(PDF | 448 KB)
• CXu_GNR_Interconnect.pdf(PDF | 2 MB)
• License terms

C. Xu, H. Li, and K. Banerjee, "Modeling, analysis, and design of graphene nano-ribbon interconnects," IEEE Transactions on Electron Devices, vol. 56, no. 8, pp. 1567-1578, 2009.

Researchers should cite this work as follows:

• Jiang, J.; Cao, W.; Banerjee, K. (2015). UCSB Graphene Nanoribbon Interconnect Compact Model. nanoHUB. doi:10.4231/D34Q7QR19

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Current version of the model only supports the model of armchair GNR (ac-GNR), and only complete diffusive edge (edge specularity p = 0). Zigzag GNR (zz-GNR) and non-diffusive edge scatterings will be considered in later versions.