Nanoscale Transistors Lecture 11: MOSFET Limits and Possibilities

By Mark Lundstrom

Electrical and Computer Engineering, Purdue University, West Lafayette, IN

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Researchers should cite this work as follows:

  • Mark Lundstrom (2012), "Nanoscale Transistors Lecture 11: MOSFET Limits and Possibilities," https://nanohub.org/resources/14772.

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Burton Morgan, Rm 121, Purdue University, West Lafayette, IN

Tags

  1. bottom up approach
  2. MOSFET
  3. nanoelectronics
  4. nanotransistors
Nanoscale Transistors Lecture 11: MOSFET Limits and Possibilities
  • Lecture 11: MOSFET Limits and Possibilities 1. Lecture 11: MOSFET Limits and … 0
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  • MOSFETs are barrier controlled devices 2. MOSFETs are barrier controlled… 67.333333333333329
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  • MOSFET IV 3. MOSFET IV 108.23333333333333
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  • traditional nanoscale MOSFET model 4. traditional nanoscale MOSFE… 162.53333333333333
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  • minimum transistor size? 5. minimum transistor size? 178.03333333333333
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  • limits to barrier control: quantum tunneling 6. limits to barrier control: qua… 286.83333333333331
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  • limits of MOSFETs 7. limits of MOSFETs 401.93333333333334
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  • minimum switching energy 8. minimum switching energy 456.1
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  • minimum channel length 9. minimum channel length 567.56666666666672
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  • minimum switching time 10. minimum switching time 758.3
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  • maximum device density 11. maximum device density 829.33333333333337
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  • limits of MOSFETs 12. limits of MOSFETs 997.13333333333333
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  • 32 nm technology 13. 32 nm technology 1003.5
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  • how close to 1.5 nm can we get? 14. how close to 1.5 nm can we get… 1119.4
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  • MOSFETs at the 5 nm scale 15. MOSFETs at the 5 nm scale 1160.9666666666667
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  • engineering the conduction band mass 16. engineering the conduction ban… 1222.3333333333333
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  • off state tunneling 17. off state tunneling 1317.7333333333334
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  • impact on IV characteristics 18. impact on IV characteristics 1441.0333333333333
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  • MOSFETs below 8 nm 19. MOSFETs below 8 nm 1636.4666666666667
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