Tags: MOSFET

Description

The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.

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  1. Chapter 1: A Primer on the MOSFet Simulator on nanoHUB.org

    19 Mar 2020 | | Contributor(s):: Abdussamad Ahmed Muntahi, Dragica Vasileska, Shaikh S. Ahmed

    The MOSFet simulator on nanoHUB.org (http://nanohub.org/resources/mosfet) simulates the equilibrium electrostatics and non-equilibrium current-voltage (I-V) characteristics of i) bulk, ii) dual-gate, and iii) SOI based field effect transistors. In this chapter, we will describe: i) the structure...

  2. Ahmed Abdelazeem

    I am a student of Faculty of Engineering, Zagazig University. During my academic studies, I'm handled several international and national NGOs including , Enactus ZU, Zag Eng Family and Multi Data...

    https://nanohub.org/members/271419

  3. ABACUS—Introduction to Semiconductor Devices

    When we hear the term semiconductor device, we may think first of the transistors in PCs or video game consoles, but transistors are the basic component in all of the electronic devices we use in...

    https://nanohub.org/wiki/EduSemiconductor2

  4. Neilalohith Sharma

    https://nanohub.org/members/257041

  5. Windows based Interactive tool for the simulation of the MOS electrostatics

    26 Jun 2019 | | Contributor(s):: Biswajeet Sahoo

    This is a tool to simulate the MOS electrostatics. It includes the simulation of  2 terminal, 3 terminal and 4 terminal MOSFET. Everything is done for both nMOS and pMOS. This tool is designed to give users an interactive visual representation of how a MOSFET would work...

  6. Windows based Interactive tool for the simulation of the MOS electrostatics by varying the different parameters given in the sliders and input boxes

    26 Jun 2019 | | Contributor(s):: Biswajeet Sahoo

    This is a tool to simulate the MOS electrostatics. It includes the simulation of  2 terminal, 3 terminal and 4 terminal MOSFET. Everything is done for both nMOS and pMOS. This tool is designed to give users an interactive visual representation of how a MOSFET would work...

  7. Ubuntu based Interactive tool for the simulation of the MOS electrostatics

    26 Jun 2019 | | Contributor(s):: Biswajeet Sahoo

    This is a tool to simulate the MOS electrostatics. It includes the simulation of  2 terminal, 3 terminal and 4 terminal MOSFET. Everything is done for both nMOS and pMOS. This tool is designed to give users an interactive visual representation of how a MOSFET would work under...

  8. MOS Simulator

    25 Jun 2019 | | Contributor(s):: Biswajeet Sahoo

    National Institute of Technology,Rourkela. This is an Interactive tool for the simulation of the MOS electrostatics by varying the different parameters given in the sliders and input boxes

  9. Franco Vera

    Franco Vera is a third year undergraduate at the University of Florida studying Materials Engineering with a focus on Electronic Materials. He is Currently working under Dr. Nancy Ruzycki to create...

    https://nanohub.org/members/230324

  10. MUHAMMAD HUSSAIN

    https://nanohub.org/members/219790

  11. Stephen Remillard

    https://nanohub.org/members/202557

  12. Semiconductor & graphene mixtures, printable, for FETs, VFETS?

    Closed | Responses: 0

    We tried synthesizing diketopyrroles, and we could not make them.

    We have fiddled with P3HT, and we are concerned about its long term compatibility with our ionic liquid...

    https://nanohub.org/answers/question/2036

  13. Elmira Tavakkoli

    https://nanohub.org/members/196743

  14. JFETIDG Model for Independent Dual-Gate JFETs

    19 Jul 2017 | Compact Models | Contributor(s):

    By Colin McAndrew1, Kejun Xia2

    1. Freescale Semiconductor 2. NXP Semiconductors

    JFETIDG is a compact model for independent dual-gate JFETs. It is also applicable to: resistors with metal shields; the drift region of LDMOS transistors; the collector resistance of vertical...

    https://nanohub.org/publications/173/?v=2

  15. MATLAB: Negative Capacitance (NC) FET Model

    05 Dec 2015 | | Contributor(s):: Muhammad Abdul Wahab, Muhammad A. Alam

    MATLAB model that calculates the Q-V, C-V, and I-V characteristics of the conventional MOSFET and NC-FET.

  16. A Tutorial Introduction to Negative-­Capacitor Landau Transistors: Perspectives on the Road Ahead

    04 Dec 2015 | | Contributor(s):: Muhammad A. Alam

    In this talk, I use a simple graphical approach to demystify the device and explain why the experimental results are easy to misinterpret. Since the NC-FET is just a special case of a much broader class of phase-change devices and systems (e.g., transistors, memories, MEMS, logic-in-memory...

  17. Green Light on Germanium

    02 Nov 2015 | | Contributor(s):: peide ye

    This talk will review recent progress as well as challenges on Ge research for future logic applications with emphasis on the breakthrough work at Purdue University on Ge nFET which leads to the demonstration of the world first Ge CMOS circuits on Si substrates. Ge device technology includes...

  18. how to simulate insulator in a GNRFET with matlab?

    Closed | Responses: 0

    I want to apply gate voltage on a graphene nanoribbon as a channel in a GNRFET. then I want to solve poisson equation but I need to know the voltage on channel as the boundary...

    https://nanohub.org/answers/question/1583

  19. Ivan C R nascimento

    https://nanohub.org/members/121504

  20. Himanshu Rai

    https://nanohub.org/members/117669