MOSFET Simulation

04 Oct 2013 | Tools | Contributor(s): Chen Shang, Sankarsh Ramadas, Tanya Faltens, derrick kearney, Krishna Madhavan

Displays drain current as a function of source-drain voltage for different values of gate voltage, gate dimensions, substrate material, and oxide material in an n-type MOSFET.

https://nanohub.org/resources/19540

Tunnel FETs - Device Physics and Realizations

10 Jul 2013 | Online Presentations | Contributor(s): Joachim Knoch

Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source …

https://nanohub.org/resources/18723

Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic

28 Jun 2013 | Publications | Contributor(s): Himadri Pal

III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can …

https://nanohub.org/resources/18697

III-V Nanoscale MOSFETS: Physics, Modeling, and Design

28 Jun 2013 | Publications | Contributor(s): Yang Liu

As predicted by the International Roadmap for Semiconductors (ITRS), power consumption has been the bottleneck for future silicon CMOS technology scaling. To circumvent this limit, researchers are …

https://nanohub.org/resources/18694

Computational and Experimental Study of Transport in Advanced Silicon Devices

28 Jun 2013 | Publications | Contributor(s): Farzin Assad

In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards to …

https://nanohub.org/resources/18769

Exploring New Channel Materials for Nanoscale CMOS

28 Jun 2013 | Publications | Contributor(s): Anisur Rahman

The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the …

https://nanohub.org/resources/18738

Nanoscale MOSFETS: Physics, Simulation and Design

28 Jun 2013 | Publications | Contributor(s): Zhibin Ren

This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate …

https://nanohub.org/resources/18763

Two-Dimensional Scattering Matrix Simulations of Si MOSFET'S

28 Jun 2013 | Publications | Contributor(s): Carl R. Huster

For many years now, solid state device simulators have been based on the drift-diffusion equations. As transistor sizes have been reduced, there has been considerable concern about the predictive …

https://nanohub.org/resources/18765

ECE 695A Lecture 9R: Review Questions

08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

Review Questions: Does NBTI power-exponent depend on voltage or temperature? Do you expect the NBTI power-exponent to be larger or smaller if trapping is important? How does one know that the …

https://nanohub.org/resources/16778

ECE 606 Lecture 27: Looking Back and Looking Forward

20 Dec 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

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https://nanohub.org/resources/16122

ECE 606 Lecture 25: Modern MOSFETs

03 Dec 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

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https://nanohub.org/resources/16055

ECE 606 Lecture 22: MOScap Frequence Response/MOSFET I-V Characteristics

26 Nov 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

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https://nanohub.org/resources/15977

ECE 606 Lecture 23: MOSFET I-V Characteristics/MOSFET Non-Idealities

26 Nov 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

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https://nanohub.org/resources/15978

ECE 606 Lecture 24: MOSFET Non-Idealities

26 Nov 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

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https://nanohub.org/resources/15979

MIT Virtual-Source Tool

07 Aug 2012 | Tools | Contributor(s): Xingshu Sun, Xufeng Wang, Yubo Sun, Mark Lundstrom

Virtual Source Model for MOSFET compact modeling

https://nanohub.org/resources/14940

Nanoscale Transistors Lecture 11: MOSFET Limits and Possibilities

19 Jul 2012 | Online Presentations | Contributor(s): Mark Lundstrom

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https://nanohub.org/resources/14772

MOSFET Design Calculations - Step 3

01 Apr 2012 | Teaching Materials | Contributor(s): Jose Valdez

A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related …

https://nanohub.org/resources/13675