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Description

The MOS capacitor consists of a Metal-Oxide-Semiconductor structure which has the semiconductor substrate with a thin oxide layer and a top metal contact, referred to as the gate. A second metal layer forms an Ohmic contact to the back of the semiconductor and is called the bulk contact.

Learn more about quantum dots from the many resources on this site, listed below. More information on MOS Capacitors can be found here.

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  1. ABACUS MOS Capacitors (Spring 2022)

    08 Jun 2022 | | Contributor(s):: Gerhard Klimeck

    In the sixth session, Dr. Gerhard Klimeck will give a brief overview of ABACUS and demonstrate the MOS Capacitor Lab. Students can experiment with the fundamental component of a MOSfet that is any computer chip...

  2. ABACUS MOS Capacitors (Winter 2021)

    31 Jan 2022 | | Contributor(s):: Gerhard Klimeck

    In the sixth session, Dr. Gerhard Klimeck will give a brief overview of ABACUS and demonstrate the MOS Capacitor Lab. Students can experiment with the fundamental component of a MOSfet that is any computer chip...

  3. Jan 26 2022

    nanoHUB Recitation Series for Semiconductor Education: MOS Capacitors

    Series Information: Recent economic needs have re-kindled national and global interest in semiconductor devices and created an urgent need for  more semiconductor device engineers and...

    https://nanohub.org/events/details/2119

  4. CV-curves of a single-gate MOS capacitor

    Q&A|Closed | Responses: 10

    t is well known that the threshold voltage shift in the semiconductor is affected by the workfunction of the gate material. Namely VG = MS. For n+ and p+ polysilicon gates that difference is...

    https://nanohub.org/answers/question/2316

  5. Chapter 1: A Primer MOSCap Tool on nanoHUB.org

    19 Mar 2020 | | Contributor(s):: Abdussamad Ahmed Muntahi, Shaikh S. Ahmed

    The primary reason to study MOS (metal-oxide-semiconductor) capacitors is to understand the principle of operation as well as become familiar with some of the routinely used characterization techniques for MOS field effect transistors (MOSFETs). The MOSCap tool on nanoHUB.org simulates the...

  6. Windows based Interactive tool for the simulation of the MOS electrostatics

    26 Jun 2019 | | Contributor(s):: Biswajeet Sahoo

    This is a tool to simulate the MOS electrostatics. It includes the simulation of  2 terminal, 3 terminal and 4 terminal MOSFET. Everything is done for both nMOS and pMOS. This tool is designed to give users an interactive visual representation of how a MOSFET would work...

  7. Windows based Interactive tool for the simulation of the MOS electrostatics by varying the different parameters given in the sliders and input boxes

    26 Jun 2019 | | Contributor(s):: Biswajeet Sahoo

    This is a tool to simulate the MOS electrostatics. It includes the simulation of  2 terminal, 3 terminal and 4 terminal MOSFET. Everything is done for both nMOS and pMOS. This tool is designed to give users an interactive visual representation of how a MOSFET would work...

  8. Ubuntu based Interactive tool for the simulation of the MOS electrostatics

    26 Jun 2019 | | Contributor(s):: Biswajeet Sahoo

    This is a tool to simulate the MOS electrostatics. It includes the simulation of  2 terminal, 3 terminal and 4 terminal MOSFET. Everything is done for both nMOS and pMOS. This tool is designed to give users an interactive visual representation of how a MOSFET would work under...

  9. MOS Simulator

    25 Jun 2019 | | Contributor(s):: Biswajeet Sahoo

    National Institute of Technology,Rourkela. This is an Interactive tool for the simulation of the MOS electrostatics by varying the different parameters given in the sliders and input boxes

  10. n-type and p-type biasing regions for MOS capacitors

    01 Nov 2018 | | Contributor(s):: Lawrence Norman LeBlanc

    This short tutorial illustrates the majority and minority charge carrier distributions in an MOS capacitor under three different biasing conditions: Accumulation, Depletion, and Inversion, for both n- and p-type structures and provides a simple mnemonic for the order of the biasing regions on a...

  11. Intro to MOS-Capacitor Tool

    09 Jan 2013 | | Contributor(s):: Emmanuel Jose Ochoa, Stella Quinones

    Understanding the effect of silicon doping, oxide (SiO2) thickness, gate type (n+poly/p+poly), and semiconductor type (n-type/p-type) on the flatband voltage, threshold voltage, surface potential and oxide voltage of a MOS-Capacitor.

  12. Liu Yongjie

    https://nanohub.org/members/81402

  13. Notes on the Solution of the Poisson-Boltzmann Equation for MOS Capacitors and MOSFETs, 2nd Edition

    out of 5 stars 

    24 Oct 2012 | | Contributor(s):: Mark Lundstrom, Xingshu Sun

    These notes are intended to complement the discussion on pp. 63 – 68 in Fundamentals of Modern VLSI Devices by Yuan Taur and Tak H. Ning [1]. (Another good reference is Semiconductor Device Fundamentals by R.F. Pierret [2].) The objective is to understand how to treat MOS electrostatics without...

  14. MOS-C VFB Calculation: Comparison of Theoretical and Simulation Values

    out of 5 stars 

    05 Feb 2012 | | Contributor(s):: Stella Quinones

    The flatband voltage is calulated based on device physics theory and is compared to the value determined from the simulation of a MOS-Capacitor using the MOSCap simulation tool on the nanoHUB.org website. By completing this exercise, the student is able to compare the mathematical model of the...

  15. MOS-C VFB Calculation: Comparison of Theoretical and Simulation Values (Instructor Copy)

    out of 5 stars 

    05 Feb 2012 | | Contributor(s):: Stella Quinones

    The flatband voltage is calulated based on device physics theory and is compared to the value determined from the simulation of a MOS-Capacitor using the MOSCap simulation tool on the nanoHUB.org website. By completing this exercise, the student is able to compare the mathematical model of the...

  16. SCHRED Exercise: MOS Capacitor Analysis

    out of 5 stars 

    20 Jul 2010 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    The objective of this exercise is to examine the influence of semiclassical and quantum-mechanical charge description on the low-frequency CV-curves. It also teaches one the influence of poly-gate depletion on the low-frequency CV-curves.

  17. Quantum Bound States Exercise

    out of 5 stars 

    16 Jun 2010 | | Contributor(s):: Gerhard Klimeck, Parijat Sengupta, Dragica Vasileska

    Exercise BackgroundQuantum-mechanical systems (structures, devices) can be separated into open systems and closed systems. Open systems are characterized with propagating or current carrying states. Closed (or bound) systems are described with localized wave-functions. One such system is a...

  18. CV profile with different oxide thickness

    out of 5 stars 

    20 Apr 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck

    C-V (or capacitance-voltage) profiling refers to a technique used for the characterization of semiconductor materials and devices. C-V testing is often used during the characterization process to determine semiconductor parameters, particularly in MOSCAP and MOSFET structures.C-V measurements can...

  19. Illinois ECE 440 Solid State Electronic Devices, Lecture 31: MOS Capacitor

    out of 5 stars 

    02 Mar 2010 | | Contributor(s):: Eric Pop

  20. Illinois ECE 440 Solid State Electronic Devices, Lecture 33: MOS Capacitance

    out of 5 stars 

    02 Mar 2010 | | Contributor(s):: Eric Pop