
ABACUS MOS Capacitors (Spring 2022)
08 Jun 2022   Contributor(s):: Gerhard Klimeck
In the sixth session, Dr. Gerhard Klimeck will give a brief overview of ABACUS and demonstrate the MOS Capacitor Lab. Students can experiment with the fundamental component of a MOSfet that is any computer chip...

ABACUS MOS Capacitors (Winter 2021)
31 Jan 2022   Contributor(s):: Gerhard Klimeck
In the sixth session, Dr. Gerhard Klimeck will give a brief overview of ABACUS and demonstrate the MOS Capacitor Lab. Students can experiment with the fundamental component of a MOSfet that is any computer chip...

Jan 26 2022
nanoHUB Recitation Series for Semiconductor Education: MOS Capacitors
Series Information: Recent economic needs have rekindled national and global interest in semiconductor devices and created an urgent need for more semiconductor device engineers and...
https://nanohub.org/events/details/2119

CVcurves of a singlegate MOS capacitor
Q&AClosed  Responses: 10
t is well known that the threshold voltage shift in the semiconductor is affected by the workfunction of the gate material. Namely VG = MS. For n+ and p+ polysilicon gates that difference is...
https://nanohub.org/answers/question/2316

Chapter 1: A Primer MOSCap Tool on nanoHUB.org
19 Mar 2020   Contributor(s):: Abdussamad Ahmed Muntahi, Shaikh S. Ahmed
The primary reason to study MOS (metaloxidesemiconductor) capacitors is to understand the principle of operation as well as become familiar with some of the routinely used characterization techniques for MOS field effect transistors (MOSFETs). The MOSCap tool on nanoHUB.org simulates the...

Windows based Interactive tool for the simulation of the MOS electrostatics
26 Jun 2019   Contributor(s):: Biswajeet Sahoo
This is a tool to simulate the MOS electrostatics. It includes the simulation of 2 terminal, 3 terminal and 4 terminal MOSFET. Everything is done for both nMOS and pMOS. This tool is designed to give users an interactive visual representation of how a MOSFET would work...

Windows based Interactive tool for the simulation of the MOS electrostatics by varying the different parameters given in the sliders and input boxes
26 Jun 2019   Contributor(s):: Biswajeet Sahoo
This is a tool to simulate the MOS electrostatics. It includes the simulation of 2 terminal, 3 terminal and 4 terminal MOSFET. Everything is done for both nMOS and pMOS. This tool is designed to give users an interactive visual representation of how a MOSFET would work...

Ubuntu based Interactive tool for the simulation of the MOS electrostatics
26 Jun 2019   Contributor(s):: Biswajeet Sahoo
This is a tool to simulate the MOS electrostatics. It includes the simulation of 2 terminal, 3 terminal and 4 terminal MOSFET. Everything is done for both nMOS and pMOS. This tool is designed to give users an interactive visual representation of how a MOSFET would work under...

MOS Simulator
25 Jun 2019   Contributor(s):: Biswajeet Sahoo
National Institute of Technology,Rourkela. This is an Interactive tool for the simulation of the MOS electrostatics by varying the different parameters given in the sliders and input boxes

ntype and ptype biasing regions for MOS capacitors
01 Nov 2018   Contributor(s):: Lawrence Norman LeBlanc
This short tutorial illustrates the majority and minority charge carrier distributions in an MOS capacitor under three different biasing conditions: Accumulation, Depletion, and Inversion, for both n and ptype structures and provides a simple mnemonic for the order of the biasing regions on a...

Intro to MOSCapacitor Tool
09 Jan 2013   Contributor(s):: Emmanuel Jose Ochoa, Stella Quinones
Understanding the effect of silicon doping, oxide (SiO2) thickness, gate type (n+poly/p+poly), and semiconductor type (ntype/ptype) on the flatband voltage, threshold voltage, surface potential and oxide voltage of a MOSCapacitor.

Liu Yongjie
https://nanohub.org/members/81402

Notes on the Solution of the PoissonBoltzmann Equation for MOS Capacitors and MOSFETs, 2nd Edition
24 Oct 2012   Contributor(s):: Mark Lundstrom, Xingshu Sun
These notes are intended to complement the discussion on pp. 63 – 68 in Fundamentals of Modern VLSI Devices by Yuan Taur and Tak H. Ning [1]. (Another good reference is Semiconductor Device Fundamentals by R.F. Pierret [2].) The objective is to understand how to treat MOS electrostatics without...

MOSC VFB Calculation: Comparison of Theoretical and Simulation Values
05 Feb 2012   Contributor(s):: Stella Quinones
The flatband voltage is calulated based on device physics theory and is compared to the value determined from the simulation of a MOSCapacitor using the MOSCap simulation tool on the nanoHUB.org website. By completing this exercise, the student is able to compare the mathematical model of the...

MOSC VFB Calculation: Comparison of Theoretical and Simulation Values (Instructor Copy)
05 Feb 2012   Contributor(s):: Stella Quinones
The flatband voltage is calulated based on device physics theory and is compared to the value determined from the simulation of a MOSCapacitor using the MOSCap simulation tool on the nanoHUB.org website. By completing this exercise, the student is able to compare the mathematical model of the...

SCHRED Exercise: MOS Capacitor Analysis
20 Jul 2010   Contributor(s):: Dragica Vasileska, Gerhard Klimeck
The objective of this exercise is to examine the influence of semiclassical and quantummechanical charge description on the lowfrequency CVcurves. It also teaches one the influence of polygate depletion on the lowfrequency CVcurves.

Quantum Bound States Exercise
16 Jun 2010   Contributor(s):: Gerhard Klimeck, Parijat Sengupta, Dragica Vasileska
Exercise BackgroundQuantummechanical systems (structures, devices) can be separated into open systems and closed systems. Open systems are characterized with propagating or current carrying states. Closed (or bound) systems are described with localized wavefunctions. One such system is a...

CV profile with different oxide thickness
20 Apr 2010   Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck
CV (or capacitancevoltage) profiling refers to a technique used for the characterization of semiconductor materials and devices. CV testing is often used during the characterization process to determine semiconductor parameters, particularly in MOSCAP and MOSFET structures.CV measurements can...

Illinois ECE 440 Solid State Electronic Devices, Lecture 31: MOS Capacitor
02 Mar 2010   Contributor(s):: Eric Pop

Illinois ECE 440 Solid State Electronic Devices, Lecture 33: MOS Capacitance
02 Mar 2010   Contributor(s):: Eric Pop