ECE 695A Lecture 22: Voltage Dependence of Thin Dielectric Breakdown

By Muhammad Alam

Electrical and Computer Engineering, Purdue University, West Lafayette, IN

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Researchers should cite this work as follows:

  • Muhammad Alam (2013), "ECE 695A Lecture 22: Voltage Dependence of Thin Dielectric Breakdown," https://nanohub.org/resources/17028.

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EE 226, Purdue University, West Lafayette, IN

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ECE 695A Lecture 22: Voltage Dependence of Thin Dielectric Breakdown
  • Lecture 22: Voltage Dependence of Thin Dielectric Breakdown 1. Lecture 22: Voltage Dependence… 0
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  • Copyright 2013 2. Copyright 2013 87.921254587921254
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  • Outline 3. Outline 88.722055388722055
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  • Dielectric Lifetime of an IC … 4. Dielectric Lifetime of an IC â… 141.54154154154153
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  • Basics of voltage acceleration 5. Basics of voltage acceleration 375.64230897564232
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  • Reduced Defect Generation at Low Voltage 6. Reduced Defect Generation at L… 487.05372038705372
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  • NMOS vs. PMOS Reliability 7. NMOS vs. PMOS Reliability 654.587921254588
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  • Outline 8. Outline 729.32932932932931
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  • Theory of Anode Hole Injection 9. Theory of Anode Hole Injection 776.74341007674343
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  • Theory of TDDB: Three Regimes 10. Theory of TDDB: Three Regimes 1095.7290623957292
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  • Basic Anode Hole Injection Model 11. Basic Anode Hole Injection Mod… 1316.9836503169838
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  • Constant field Impact Ionization 12. Constant field Impact Ionizati… 1653.5869202535871
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  • … vs. bulk impact ionization 13. … vs. bulk impact ionization 1807.173840507174
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  • AHI Model: At High and Low Voltages 14. AHI Model: At High and Low Vol… 1977.2105438772105
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  • AHI – Analytical theory at moderate voltage 15. AHI – Analytical theory at m… 2141.7083750417087
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  • AHI Model at low voltage: Numerical Calculation 16. AHI Model at low voltage: Nume… 2456.6566566566567
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  • Understanding the Hole Fluxes 17. Understanding the Hole Fluxes 2749.0490490490492
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  • Hole Oxide Flux Distributions 18. Hole Oxide Flux Distributions 2841.1077744411077
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  • Outline 19. Outline 3002.9362696029366
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  • Verification: Field Dependence 20. Verification: Field Dependence 3035.6690023356691
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  • Verification: Thickness Dependence 21. Verification: Thickness Depend… 3149.4828161494829
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  • Verification: Substrate Bias Experiments 22. Verification: Substrate Bias E… 3293.9606272939609
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  • Verification: Majority vs. Minority Ionization 23. Verification: Majority vs. Min… 3402.1354688021356
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  • Majority vs. Minority Ionization … Role of Hot Contacts 24. Majority vs. Minority Ionizati… 3640.1401401401404
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  • Hole Generation Probabilities 25. Hole Generation Probabilities 3764.1975308641977
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  • NMOS vs. PMOS Reliability 26. NMOS vs. PMOS Reliability 3892.7260593927263
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  • Verification: Polarity dependence 27. Verification: Polarity depende… 3954.3877210543878
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  • Outline 28. Outline 3983.8505171838506
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  • Universal VG-dependent TBD 29. Universal VG-dependent TBD 3985.3853853853857
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  • Reduced Defect Generation at Low Voltage 30. Reduced Defect Generation at L… 4034.6680013346681
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  • Conclusions 31. Conclusions 4060.2602602602606
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  • References 32. References 4125.1584918251583
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