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Short-Wavelength Spin-Wave Generation by a Microstrip Line
17 Sep 2015 | Online Presentations | Contributor(s): Adam Papp, Wolfgang Porod
IWCE 2015 presentation. We investigate the use of microstrip lines for short-wavelength spin-wave generation in magnetic thin films. We use micromagnetic and electromagnetic simulations to estimate the generated wave amplitudes for different geometries and at different frequencies. Our...
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Self-Consistent Field and Master Equation Approach to Calculating the Dielectric Function of Graphene
17 Sep 2015 | Online Presentations | Contributor(s): Farhad Karimi, Irena Knezevic
IWCE 2015 presentation. Abstract and more information to be added at a later date.
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Non-Equilibrium Green's Function (NEGF): A Different Perspective
18 Sep 2015 | Online Presentations | Contributor(s): Supriyo Datta
The NEGF method was established in the 1960’s through the classic work of Keldysh and others [1] using the methods of many- body perturbation theory (MBPT) and this approach is widely used in the literature [2]. By contrast I have introduced a different approach starting with the...
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Effect of the High-k Dielectric/Semiconductor Interface on Electronic Properties in Ultra-thin Channels
15 Oct 2015 | Online Presentations | Contributor(s): Daniel A. Valencia-Hoyos, Evan Michael Wilson, mark rodwell, Gerhard Klimeck, Michael Povolotskyi
IWCE 2015 presentation. Abstract and more information to be added at a later date. As logic devices continue to downscale, an increasing fraction of the channel atoms are in close contact with oxide atoms of the gate. These surface atoms experience a chemical environment that is distinct...
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Design and simulation of GaSb/InAs 2D Transmission enhanced TFET
10 Oct 2015 | Online Presentations | Contributor(s): Pengyu Long, Evan Michael Wilson, Jun Huang, mark rodwell, Gerhard Klimeck, Michael Povolotskyi
IWCE 2015 presentation. Abstract and more information to be added at a later date.
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Self-Consistent Physical Modeling of SiOx-Based Memristor Structures
15 Oct 2015 | Online Presentations | Contributor(s): Vihar Georgiev, Toufik Sadi, Asen Asenov
IWCE 2015 presentation We employ a newly-developed three- dimensional (3D) physical simulator to study Si resistive switching nonvolatile memory (RRAM) structures. We couple a stochastic simulation of ion transport to the ‘atomistic’ simulator GARAND and a self-heating model to...
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Spin Lifetime Dependence on Valley Splitting in Thin Silicon Films
15 Oct 2015 | Online Presentations | Contributor(s): Joydeep Ghosh, Dmitri Osintsev, Viktor Sverdlov, S. Selberherr
IWCE 2015 presentation. the electron spin properties are promising for future spin-driven devices. in contrast to charge, spin is not a conserved quantity, and having sufficiently long spin lifetime is critical for applications. silicon, the major material of microelectronics, also appears...
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Density Functional Tight Binding (DFTB) Modeling in the Context of Ultra-Thin Silicon-on-Insulator MOSFETs
10 Oct 2015 | Online Presentations | Contributor(s): Stanislav Markov
IWCE 2015 presentation. We investigate the applicability of density functional tight binding (DFTB) theory [1][2], coupled to non-equilibrium Green functions (NEGF), for atomistic simulations of ultra-scaled electron devices, using the DFTB+ code [3][4]. In the context of ultra-thin...
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Multiscale Modeling of Graphene-Metal Contacts
01 Feb 2016 | Online Presentations | Contributor(s): T. Cusati, Gianluca Fiori, A. Fortunelli, Giuseppe Iannaccone
IWCE 2015 presentation. The quality of contacts between metals and two- dimensional materials is a critical aspect for the performance of transistors based on two-dimensional materials. In this talk we focus on an approach to multiscale modeling of graphene- metal contacts, considering both...
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NEMO5: Why must we treat topological insulator nanowires atomically?
15 Oct 2015 | Online Presentations | Contributor(s): Fan Chen, Michael J. Manfra, Gerhard Klimeck, Tillmann Christoph Kubis
IWCE 2015 presentation. Abstract and more information to be added at a later date.
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Dissipative Quantum Transport Using One-Particle Time-Dependent (Conditional) Wave Functions
19 Oct 2015 | Online Presentations | Contributor(s): Xavier Oriols
IWCE 2015 presentation. an effective single-particle schrodinger equation to include dissipation into quantum devices is presented. this effective equation is fully understood in the context of bohmian mechanics, a theory of particles and waves, where it is possible to define unambiguously...
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Computational Methods for the Design of Bioinspired Systems that Employ Nanodevices
05 Nov 2015 | Online Presentations | Contributor(s): Damien Querlioz, Adrien F. Vincent
IWCE 2015 session keynote presentation. Biological systems compute by exploiting the rich physics of their natural “nanodevices”. In electronics, it is therefore attractive to design bioinspired computing paradigms, which exploit device physics more deeply than digital logic, in order...
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Diffusion-Reaction Modeling of Cu Migration in CdTe Solar Devices
22 Apr 2016 | Online Presentations | Contributor(s): Da GUO, Tian Fang, Richard Akis, Dragica Vasileska
IWCE 2015 presentation. In this work, we report on development of one-dimensional (1D) finite-difference and two- dimensional (2D) finite-element diffusion-reaction simulators to investigate mechanisms behind Cu- related metastabilities observed in CdTe solar cells [1]. The evolution of CdTe...
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Analyzing Variability in Short-Channel Quantum Transport from Atomistic First Principles
05 Nov 2015 | Online Presentations | Contributor(s): Qing Shi
IWCE 2015 invited presentation. Due to random impurity fluctuations, the device-to-device variability is a serious challenge to emerging nanoelectronics. In this talk I shall present a theoretical formalism and its numerical realization to predict quantum-transport variability from...
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From Single-Stage to Device-Level Simulation of Coupled Electron and Phonon Transport in Quantum Cascade Lasers
02 Nov 2015 | Online Presentations | Contributor(s): Irena Knezevic
IWCE 2015 presentation. Abstract and more information to be added at a later date.
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Multi-Scale Modeling of Metal-CNT Interfaces
03 Nov 2015 | Online Presentations | Contributor(s): Martin Claus
IWCE 2015 presentation. the authors studied the impact of contact materials on cntfet behavior using multiscale modeling and simulation framework. a strong correlation between metal-cnt coupling strength, contact length and contact resistance was found. the atomistic simulation was used to...
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A Multi-Scale Modeling Approach to Study Transport in Silicon Heterojunction Solar Cells
03 Nov 2015 | Online Presentations | Contributor(s): Pradyumna Muralidharan, Dragica Vasileska, Stephen M. Goodnick, Stuart Bowden
IWCE 2015 presentation. Abstract and more information to be added at a later date.
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Unified View of Electron and Phonon Transport
10 Nov 2015 | Online Presentations | Contributor(s): Mark Lundstrom, Jesse Maassen
A simple, unified view of electron and phonon transport is presented. Similarities and differences are identified, and new insights that come from addressing phonon transport from an electron transport perspective will be discussed.
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Simulation of Organic Solar Cell with Graphene Transparent Electrode
13 Nov 2015 | Online Presentations | Contributor(s): Paolo Paletti, giacomo ulisse, Giuseppe Iannaccone, Gianluca Fiori
IWCE 2015 presentation. We present a simulation study of the performance of organic solar cell (OSC) exploiting graphene as transparent electrode. The approach is based on a multi-scale/multi-physics simulation framework, which is able to provide relevant information regarding the design...
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Mode Space Tight Binding Model for Ultra-Fast Simulations of III-V Nanowire MOSFETs and Heterojunction TFETs
13 Nov 2015 | Online Presentations | Contributor(s): Aryan Afzalian, Jun Huang, Hesameddin Ilatikhameneh, Santiago Alonso Perez Rubiano, Tillmann Christoph Kubis, Michael Povolotskyi, Gerhard Klimeck
IWCE 2015 presentation. we explore here the suitability of a mode space tight binding algorithm to various iii-v homo- and heterojunction nanowire devices. we show that in iii-v materials, the number of unphysical modes to eliminate is very high compared to the si case previously reported...
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Time-Resolved Computational Method for Atomistic Open System Simulations
13 Nov 2015 | Online Presentations | Contributor(s): Bozidar Novakovic, Gerhard Klimeck
IWCE 2015 presentation. Abstract and more information to be added at a later date.
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Phonon Interactions in Single-Dopant-Based Transistors: Temperature and Size Dependence
25 Nov 2015 | Online Presentations | Contributor(s): Marc Bescond, Nicolas Cavassilas, Salim Berrada
IWCE 2015 presentation. in this work we investigate the dependence of electron-phonon scattering in single dopant-based nanowire transistor with respect to temperature and dimensions. we use a 3d real-space non-equilibrium green': ; s function (negf) approach where electron-phonon...
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GaN/InGaN/GaN Disk-in-Wire Light Emitters: Polar vs. Nonpolar Orientations
25 Nov 2015 | Online Presentations | Contributor(s): Rezaul Karim Nishat, S. Alqahtani, Ye Wu, Vinay Uday Chimalgi, Shaikh S. Ahmed
IWCE 2015 presentation. in this paper, we computationally evaluate and compare the performance of recently reported in0.75n/gan disk-in-wire light emitting diodes (led) grown in the polar (c-plane) and nonpolar (m-plane) crystallographic orientations in terms of built-in fields, electronic...
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Thermal Conductivity of III-V Semiconductor Superlattices
25 Jan 2016 | Online Presentations | Contributor(s): Song Mei, Zlatan Aksamija, Irena Knezevic
IWCE 2015 presentation. An InGaAs/InAlAs superlattice (SL) on an InP substrate is the mainstream material system for mid- IR quantum cascade lasers (QCL). The thermal conductivity tensor of SLs is critical for energy-efficient performance of QCLs; understanding the relative importance of...
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Study of the Interface Roughness Models using 3D Finite Element Schrödinger Equation Corrected Monte Carlo Simulator on Nanoscaled FinFET
25 Jan 2016 | Online Presentations | Contributor(s): Daniel Nagy, Muhammad Ali A. Elmessary, Manuel Aldegunde, Karol Kalna
IWCE 2015 presentation. Interface roughness scattering (IRS) is one of the key limiting scattering mechanism for both planar and non-planar CMOS devices. To predict the performance of future scaled devices and new structures the quantum mechanical confinement based IRS models are essential....
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Screening Effect on Electric Field Produced by Spontaneous Polarization in ZnO Quantum Dot in Electrolyte
05 Jan 2016 | Online Presentations | Contributor(s): Xinia Meshik, Min S. Choi, Mitra Dutta, Michael Stroscio
IWCE 2015 presentation. in this paper, the calculation of the strength of the electrostatic field produced by zno quantum dots due to the spontaneous polarization in a physiological electrolyte and its application on retinal horizontal cells are presented.
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Thermionic Escape in Quantum Well Solar Cell
18 Dec 2015 | Online Presentations | Contributor(s): Nicolas Cavassilas, Fabienne Michelini, Marc Bescond
This theoretical work analyzes the photogeneration and the escape of carrier in InGaN/GaN core-shell nanowires. Our electronic transport model considers quantum behaviors such as confinement, tunneling, electron-phonon scattering and electron-photon interactions. The large lattice mismatch...
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Anisotropic Schrödinger Equation Quantum Corrections for 3D Monte Carlo Simulations of Nanoscale Multigate Transistors
05 Jan 2016 | Online Presentations | Contributor(s): Karol Kalna, Muhammad Ali A. Elmessary, Daniel Nagy, Manuel Aldegunde
IWCE 2015 presentation. We incorporated anisotropic 2D Schrodinger equation based quantum corrections (SEQC) that depends on valley orientation into a 3D Finite Element (FE) Monte Carlo (MC) simulation toolbox. The MC toolbox was tested against experimental ID-VG characteristics of the 22 nm gate...
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Calculation of phonon transmission in Si/PtSi heterostructures
25 Jan 2016 | Online Presentations | Contributor(s): Jung Hyun Oh, Mincheol Shin
In this work we examine the suppression of phonon transport in another example, Si and SiPt heterostructures (3D). This heterostrucure is believed to have the benefit that the electrical conductance can be kept high while the phonon propagation is suppressed due to the large acoustic impedance...
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Variational Formulation of Stable Discrete k · p Models
25 Jan 2016 | Online Presentations | Contributor(s): William R Frensley
IWCE 2015 presentation. the longstanding problem of spurious states in k·: ; p models of semiconductor nanostructures has been shown to be an artifact of the use of the centereddifference approximation to the gradient, and it has been shown that stable models may be constructed on the...
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IWCE 2015: Openning Remarks
10 Feb 2016 | Online Presentations | Contributor(s): Gerhard Klimeck
IWCE 2015 presentation. Welcome and opening remarks for the 18th International Workshop on Computational Electronics.
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Progress on Quantum Transport Simulation Using Empirical Pseudopotentials
10 Feb 2016 | Online Presentations | Contributor(s): Jingtian Fang, William Gerard Hubert Vandenberghe, Massimo V Fischetti
IWCE 2015 presentation. After performing one-dimensional simulation of electron transport in narrow quantum wires without gate control in (Fang et al., 2014) and (Fu and Fischetti, 2013) using the open boundary-conditions full-band plane-wave transport formalism derived in (Fu, 2013), we now...
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Wigner Function Approach to Quantum Transport in QCLs
10 Feb 2016 | Online Presentations | Contributor(s): Olafur Jonasson, Irena Knezevic
IWCE 2015 presentation. Abstract and more information to be added at a later date.
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Memory-Efficient Particle Annihilation Algorithm for Wigner Monte Carlo Simulations
10 Feb 2016 | Online Presentations | Contributor(s): Paul Ellinghaus
IWCE 2015 presentation. The Wigner Monte Carlo solver, using the signed-particle method, is based on the generation and annihilation of numerical particles. The memory demands of the annihilation algorithm can become exorbitant, if a high spatial resolution is used, because the entire discretized...
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Ultra-Thin Silicon Membranes and Nanowires as Nanophononic and Thermoelectric Devices
10 Feb 2016 | Online Presentations | Contributor(s): Davide Donadio
IWCE 2015 presentation. Engineering silicon at the nanoscale paves the way to new applications of this cheap, abundant, and technologically and environmentally friendly material. Transistors in nanoelectronics have reached the 10 nm size limit, implying very high density but also critical issues...
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Modeling Quantum Acceleration (Multi-Band Drift) of Bloch Waves in Nanowires
24 Mar 2016 | Online Presentations | Contributor(s): Raghuraj Hathwar, marco saraniti, Stephen M. Goodnick
IWCE 2015 presentation. Abstract and more information to be added at a later date.
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Contact Resistances in Trigate & FinFET Devices
22 Mar 2016 | Online Presentations | Contributor(s): Yann-Michel Niquet
IWCE 2015 presentation.
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Validating Simple Approaches for Quantum Cascade Laser Modeling
21 Apr 2016 | Online Presentations | Contributor(s): Martin Franckie, David O. Winge, Andreas Wacker
IWCE 2015 presentation. Abstract and more information to be added at a later date.
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Multi-Scale Modeling of Self-Heating Effects in Nano-Devices
21 Apr 2016 | Online Presentations | Contributor(s): Suleman Sami Qazi, Akash Anil Laturia, Robin Louis Daugherty, Katerina Raleva, Dragica Vasileska
IWCE 2015 presentation. This paper discusses a multi-scale device modeling scheme for analyzing self-heating effects in nanoscale silicon devices. A 2D/3D particle-based device simulator is self-consistently coupled to an energy balance solver for the acoustic and optical phonon bath. This...
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Modeling of Quantum Cascade Laser Sources with Giant Optical Nonlinearities
07 Apr 2016 | Online Presentations | Contributor(s): Christian Jirauschek
IWCE 2015 Presentation. A characteristic feature of the quantum cascade laser (QCL) is that the optical properties of the active region can be custom-tailored by quantum engineering. Recently, the possibility to integrate giant artificial optical nonlinearities has enabled various novel...
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Electronic and Vibrational Properties of 2D Materials from Monolayer to Bulk: Opportunity Unlimited
21 Apr 2016 | Online Presentations | Contributor(s): Mahesh R Neupane
IWCE 2015 invited presentation. The placement of two dimensional (2D) materials such as hexagonal boron nitride (h-BN) and transition metal dichalcogenide (TMDC) at the forefront of materials and device research was pioneered by the discovery of graphene, an atomically thin 2D allotrope of...
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15-Band Spectral Envelope Function Formalism Applied to Broken Gap Tunnel Field-Effect Transistors
01 Nov 2016 | Online Presentations | Contributor(s): Devin Verreck, Maarten Van de Put, Anne Verhulst, Bart Soree, G. Groeseneken, Ashish Dabral
IWCE 2015 presentation.
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The Role of Dimensionality on Phonon-Limited Charge Transport: from CNTs to Graphene
27 Oct 2016 | Online Presentations | Contributor(s): Jing Li, Yann-Michel Niquet
IWCE 2015 presentation.
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Low Temperature Enhancement of the Thermoelectric Seebeck Coefficient in Semiconductor Nanoribbons
09 Nov 2016 | Online Presentations | Contributor(s): Kommini Adithya, Zlatan Aksamija
IWCE 2015 Presentation. We propose a novel approach to achieving a narrow window-shaped TDF through a combination of a step-like 2-dimensional density-of-states (DOS) and inelastic optical phonon scattering. A shift in the onset of scattering with respect to the step-like DOS creates a TDF which...
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Finite Difference Schemes for k.p Models: A Comparative Study
01 Nov 2016 | Online Presentations | Contributor(s): Jun Huang, Kuang-Chung Wang, William R Frensley, Gerhard Klimeck
IWCE 2015 Presentation.
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Transferable Tight Binding Model for Strained Heterostructures
22 Oct 2016 | Online Presentations | Contributor(s): Yaohua Tan, Michael Povolotskyi, Tillmann Christoph Kubis, Timothy Boykin, Gerhard Klimeck
IWCE 2015 presentation.
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Modeling of Inter-ribbon Tunneling in Graphene
11 Nov 2016 | Online Presentations | Contributor(s): Maarten Van de Put, William Gerard Hubert Vandenberghe, Massimo V Fischetti
IWCE presentation. In this paper we investigate the finite-size effect in nano-scaled graphene flakes. Improving on the bulk description, and because the structures are – atomistically speaking – large in size, we use the empirical pseudopotential method[2].