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Padre
2D/3D devices under steady state, transient conditions or AC small-signal analysis
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Published on
Abstract
PADRE is a 2D/3D simulator for electronic devices, such as MOSFET transistors. It can simulate physical structures of arbitrary geometry--including heterostructures--with arbitrary doping profiles, which can be obtained using analytical functions or directly from multidimensional process simulators such as Prophet. For each electrical bias, PADRE solves a coupled set of partial differential equations (PDEs). A variety of PDE systems are supported which form a hierarchy of accuracy:
- electrostatic (Poisson equation)
- drift-diffusion (including carrier continuity equations)
- energy balance (including carrier temperature)
- electrothermal (including lattice heating)
A variety of supplemental documents are available that deal with the PADRE software and TCAD simulation:
- Supporting Documents
- Question and Answer Forum
- A set of course notes on Computational Electronics with detailed explanations on bandstructure, pseudopotentials, numerical issues, and drift diffusion.
- Introduction to DD Modeling with PADRE
- MOS Capacitors: Description and Semiclassical Simulation With PADRE
- A Primer on Semiconductor Device Simulation
Credits
PADRE was developed at Bell Labs by Mark Pinto, R. Kent Smith, and Ashraful Alam.
Additional developments were made in collaboration by the following:
Steven Clark | rappture interface |
Xufeng Wang | rappture interface |
Gerhard Klimeck | interface and output requirements |
Dragica Vasileska | sample inputs and output requirements |
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