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Newton’s method to solve poisson, continuity, drift diffusion equation?
Closed | Responses: 0
Hi, I want to solve poisson, continuity, drift diffusion equation with newton's method.
Is there any material in nanohub that guides me how to do it?
Computational and Experimental Study of Transport in Advanced Silicon Devices
28 Jun 2013 | | Contributor(s):: Farzin Assad
In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards to the BJT, we will compare and assess the solutions of a physically detailed microscopic model to...
Closed | Responses: 1
Do not know why, but despite the 21 points simulation asked (default), the simulation actually calculates ~500 voltage points and the simulation last 15-30’. Did I miss something ?
ECE 606 Lecture 11: Interface States Recombination/Carrier Transport
10 Oct 2012 | | Contributor(s):: Gerhard Klimeck
ECE 656 Lecture 41: Transport in a Nutshell
21 Feb 2012 | | Contributor(s):: Mark Lundstrom
ECE 656 Lecture 30: Balance Equation Approach I
09 Feb 2012 | | Contributor(s):: Mark Lundstrom
This lecture should be viewed in the 2009 teaching ECE 656 Lecture 28: Balance Equation Approach I
ECE 656 Lecture 6: Near-Equilibrium Transport in the Bulk
20 Sep 2011 | | Contributor(s):: Mark Lundstrom
Drift-Diffusion Lab Learning Materials
By completing the Drift-Diffusion Lab in ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors, users will be able to: a) understand the phenomenon of drift and...
1D Drift Diffusion Model for Crystalline Solar Cells
16 Apr 2011 | | Contributor(s):: Dragica Vasileska, Xufeng Wang, Shankar Ramakrishnan
Simulate a 1D solar cell of crystalline material with drift diffusion equations
Drift-Diffusion Modeling and Numerical Implementation Details
28 May 2010 | | Contributor(s):: Dragica Vasileska
This tutorial describes the constitutive equations for the drift-diffusion model and implementation details such as discretization and numerical solution of the algebraic equations that result from the finite difference discretization of the Poisson and the continuity...
Numerical solution of the Drift-Diffusion Equations for a diode
This material describes the implementation and also gives the source code for the numerical solution of the Drift-Diffusion equations for a PN Diode. The code can be easily generalized for any 2D or 3D device.
Nanotechnology Animation Gallery
20 Apr 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck
Animations and visualization are generated with various nanoHUB.org tools to enable insight into nanotechnology and nanoscience. Click on image for detailed description and larger image download. Additional animations are also available Featured nanoHUB tools: Band Structure Lab. Carrier...
ECE 656 Lecture 36: The Course in a Lecture
09 Dec 2009 | | Contributor(s):: Mark Lundstrom
ECE 656 Lecture 28: Balance Equation Approach I
13 Nov 2009 | | Contributor(s):: Mark Lundstrom
Outline:IntroductionGeneral continuity equationCarrier continuity equationCurrent equationSummary
ECE 656 Lecture 10: The Drift-Diffusion Equation
18 Sep 2009 | | Contributor(s):: Mark Lundstrom
Outline:Transport in the bulkThe DD equationIndicial notationDD equation with B-field
From Semi-Classical to Quantum Transport Modeling
09 Aug 2009 | | Contributor(s):: Dragica Vasileska
This set of powerpoint slides series provides insight on what are the tools available for modeling devices that behave either classically or quantum-mechanically. An in-depth description is provided to the approaches with emphasis on the advantages and disadvantages of each approach. Conclusions...
From Semi-Classical to Quantum Transport Modeling: Drift-Diffusion and Hydrodynamic Modeling
ECE 606 Lecture 16: Carrier Transport
out of 5 stars
23 Feb 2009 | | Contributor(s):: Muhammad A. Alam
Physics of Nanoscale MOSFETs
26 Aug 2008 | | Contributor(s):: Mark Lundstrom
Transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to MOSFET device physics are less and less suitable This short course describes a way of understanding MOSFETs that is much more suitable than traditional approaches when the channel lengths are of...