28 Sep 2022 | | Contributor(s):: Eric Guichard
SILVACO Semiconductor Process and Device Simulation for Educational Purposes Only, see License below.
Three Ideas to Achieve Negative Resistance
15 Jul 2022 |
ABACUS PN Junctions (Spring 2022)
05 May 2022 | | Contributor(s):: Gerhard Klimeck
In this session, Dr. Gerhard Klimeck will give a brief overview of ABACUS and demonstrate the PN Junction Lab. With the PN Junction Lab, students can explore band edge diagrams and charge distributions as a function of bias...
ABACUS Drift-Diffusion-Lab with Bias and Light (Spring 2022)
In the fourth session, Dr. Klimeck will give a brief overview of ABACUS and demonstrate the Drift-Diffusion-Lab. Students can experiment with a semiconductor slab under bias and/or light illumination...
May 02 2022
nanoHUB Recitation Series for Semiconductor Education and Workforce Development: Drift-Diffusion-Lab with Bias and Light
Near-Equilibrium Transport Fundamentals and Applications
30 Jan 2022 | | Contributor(s):: Mark Lundstrom, Changwook Jeong
These lectures are designed to introduce students to the fundamentals of carrier transport in nano-devices using a novel, “bottom up approach” that agrees with traditional methods when devices are large, but which also works for nano-devices.
ABACUS Drift-Diffusion-Lab with Bias and Light (Winter 2021)
19 Jan 2022 | | Contributor(s):: Gerhard Klimeck
Jan 12 2022
nanoHUB Recitation Series for Semiconductor Education: Drift-Diffusion-Lab with Bias and Light
ABACUS PN Junctions (Winter 2021)
13 Dec 2021 | | Contributor(s):: Gerhard Klimeck
PN Junction Lab (New Interactive Front End)
16 Aug 2019 | | Contributor(s):: Daniel Mejia, Gerhard Klimeck
Visualize and explore P-N junction concepts fully interactively: Band Edge Diagrams, Charge Densities, I-V and C-V Characteristics
02 Apr 2019 | | Contributor(s):: Abdul Rawoof Shaik, Daniel Brinkman', Christian Ringhofer, Igor Sankin, Bedrich Benes, Dmitry Krasikov, Hao Kang, Dragica Vasileska
We introduce a simulator for modeling transport of charge carriers and electrically active defect centers in solar cells by treating them on an equal footing. The details about the solver’s graphical user interface along with numerical algorithms employed are described. The exact...
3 min Research Talk: Predicting and Optimizing Solar Cell Performance with Material/Surface Characteristics
31 Jan 2019 | | Contributor(s):: Yiheng Zhu
Photovoltaic simulation tools can be utilized to predict device performance before fabrication and experimentation, streamline research processes, and interpret experimental results. Therefore, we developed ContourPV, which simulates various combinations of values of different device...
Stanford 2D Semiconductor (S2DS) Transistor Model
11 Aug 2018 | Compact Models | Contributor(s):
By Saurabh Vinayak Suryavanshi1, Eric Pop1
The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.
Sebastian Jan Juchnowski
04 Apr 2016 | Compact Models | Contributor(s):
Newton’s method to solve poisson, continuity, drift diffusion equation?
Closed | Responses: 0
Hi, I want to solve poisson, continuity, drift diffusion equation with newton's method.
Is there any material in nanohub that guides me how to do it?
22 Oct 2014 | Compact Models | Contributor(s):
Drift Diffusion Video Demonstration
24 Jun 2014 | | Contributor(s):: Saumitra Raj Mehrotra, Lynn Zentner, Joseph M. Cychosz
This video shows the use of the Drift-Diffusion Lab to simulate drift and diffusion carrier mechanisms in a semiconductor. The examples demonstrated will be helpful to a first time user in understanding the use of the tool.
Computational and Experimental Study of Transport in Advanced Silicon Devices
28 Jun 2013 | | Contributor(s):: Farzin Assad
In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards to the BJT, we will compare and assess the solutions of a physically detailed microscopic model to...
Closed | Responses: 1
Do not know why, but despite the 21 points simulation asked (default), the simulation actually calculates ~500 voltage points and the simulation last 15-30’. Did I miss something ?