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  1. Silvaco TCAD

    28 Sep 2022 | | Contributor(s):: Eric Guichard

    SILVACO Semiconductor Process and Device Simulation for Educational Purposes Only, see License below.

  2. Three Ideas to Achieve Negative Resistance

    15 Jul 2022 |

  3. ABACUS PN Junctions (Spring 2022)

    05 May 2022 | | Contributor(s):: Gerhard Klimeck

    In this session, Dr. Gerhard Klimeck will give a brief overview of ABACUS and demonstrate the PN Junction Lab. With the PN Junction Lab, students can explore band edge diagrams and charge distributions as a function of bias...

  4. ABACUS Drift-Diffusion-Lab with Bias and Light (Spring 2022)

    05 May 2022 | | Contributor(s):: Gerhard Klimeck

    In the fourth session, Dr. Klimeck will give a brief overview of ABACUS and demonstrate the Drift-Diffusion-Lab. Students can experiment with a semiconductor slab under bias and/or light illumination...

  5. May 02 2022

    nanoHUB Recitation Series for Semiconductor Education and Workforce Development: Drift-Diffusion-Lab with Bias and Light

    Abstract: In the fourth session, Dr. Gerhard Klimeck will give a brief overview of ABACUS and demonstrate the Drift-Diffusion-Lab. Students can experiment with a semiconductor slab under bias...

    https://nanohub.org/events/details/2173

  6. Near-Equilibrium Transport Fundamentals and Applications

    30 Jan 2022 | | Contributor(s):: Mark Lundstrom, Changwook Jeong

    These lectures are designed to introduce students to the fundamentals of carrier transport in nano-devices using a novel, “bottom up approach” that agrees with traditional methods when devices are large, but which also works for nano-devices.

  7. ABACUS Drift-Diffusion-Lab with Bias and Light (Winter 2021)

    19 Jan 2022 | | Contributor(s):: Gerhard Klimeck

    In the fourth session, Dr. Klimeck will give a brief overview of ABACUS and demonstrate the Drift-Diffusion-Lab. Students can experiment with a semiconductor slab under bias and/or light illumination...

  8. Jan 12 2022

    nanoHUB Recitation Series for Semiconductor Education: Drift-Diffusion-Lab with Bias and Light

    Series Information: Recent economic needs have re-kindled national and global interest in semiconductor devices and created an urgent need for  more semiconductor device engineers and...

    https://nanohub.org/events/details/2116

  9. ABACUS PN Junctions (Winter 2021)

    13 Dec 2021 | | Contributor(s):: Gerhard Klimeck

    In this session, Dr. Gerhard Klimeck will give a brief overview of ABACUS and demonstrate the PN Junction Lab. With the PN Junction Lab, students can explore band edge diagrams and charge distributions as a function of bias...

  10. PN Junction Lab (New Interactive Front End)

    16 Aug 2019 | | Contributor(s):: Daniel Mejia, Gerhard Klimeck

    Visualize and explore P-N junction concepts fully interactively: Band Edge Diagrams, Charge Densities, I-V and C-V Characteristics

  11. PVRD-FASP

    02 Apr 2019 | | Contributor(s):: Abdul Rawoof Shaik, Daniel Brinkman', Christian Ringhofer, Igor Sankin, Bedrich Benes, Dmitry Krasikov, Hao Kang, Dragica Vasileska

    We introduce a simulator for modeling transport of charge carriers and electrically active defect centers in solar cells by treating them on an equal footing.  The details about the solver’s graphical user interface along with numerical algorithms employed are described. The exact...

  12. 3 min Research Talk: Predicting and Optimizing Solar Cell Performance with Material/Surface Characteristics

    31 Jan 2019 | | Contributor(s):: Yiheng Zhu

    Photovoltaic simulation tools can be utilized to predict device performance before fabrication and experimentation, streamline research processes, and interpret experimental results. Therefore, we developed ContourPV, which simulates various combinations of values of different device...

  13. Stanford 2D Semiconductor (S2DS) Transistor Model

    11 Aug 2018 | Compact Models | Contributor(s):

    By Saurabh Vinayak Suryavanshi1, Eric Pop1

    Stanford University

    The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.

    https://nanohub.org/publications/18/?v=3

  14. Sebastian Jan Juchnowski

    https://nanohub.org/members/197883

  15. Stanford 2D Semiconductor (S2DS) Transistor Model

    04 Apr 2016 | Compact Models | Contributor(s):

    By Saurabh Vinayak Suryavanshi1, Eric Pop1

    Stanford University

    The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.

    https://nanohub.org/publications/18/?v=2

  16. Newton’s method to solve poisson, continuity, drift diffusion equation?

    Closed | Responses: 0

    Hi, I want to solve poisson, continuity, drift diffusion equation with newton's method.

    Is there any material in nanohub that guides me how to do it?

    https://nanohub.org/answers/question/1709

  17. Stanford 2D Semiconductor (S2DS) Transistor Model

    22 Oct 2014 | Compact Models | Contributor(s):

    By Saurabh Vinayak Suryavanshi1, Eric Pop1

    Stanford University

    The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.

    https://nanohub.org/publications/18/?v=1

  18. Drift Diffusion Video Demonstration

    24 Jun 2014 | | Contributor(s):: Saumitra Raj Mehrotra, Lynn Zentner, Joseph M. Cychosz

    This video shows the use of the Drift-Diffusion Lab to simulate drift and diffusion carrier mechanisms in a semiconductor. The examples demonstrated will be helpful to a first time user in understanding the use of the tool.

  19. Computational and Experimental Study of Transport in Advanced Silicon Devices

    28 Jun 2013 | | Contributor(s):: Farzin Assad

    In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards to the BJT, we will compare and assess the solutions of a physically detailed microscopic model to...

  20. Simulation time

    Closed | Responses: 1

    Do not know why, but despite the 21 points simulation asked (default), the simulation actually calculates ~500 voltage points and the simulation last 15-30’. Did I miss something ?

    https://nanohub.org/answers/question/1103