
ABACUS DriftDiffusionLab with Bias and Light
19 Jan 2022   Contributor(s):: Gerhard Klimeck
In the fourth session, Dr. Klimeck will give a brief overview of ABACUS and demonstrate the DriftDiffusionLab. Students can experiment with a semiconductor slab under bias and/or light illumination. They can explore how illumination from the top of an intrinsic semiconductor increases the...

Jan 12 2022
nanoHUB Recitation Series for Semiconductor Education: DriftDiffusionLab with Bias and Light
Series Information: Recent economic needs have rekindled national and global interest in semiconductor devices and created an urgent need for more semiconductor device engineers and...
https://nanohub.org/events/details/2116

ABACUS PN Junctions
13 Dec 2021   Contributor(s):: Gerhard Klimeck
In this session, Dr. Gerhard Klimeck will give a brief overview of ABACUS and demonstrate the PN Junction Lab. With the PN Junction Lab, students can explore band edge diagrams and charge distributions as a function of bias. They can see how the bands move and how the depletion region narrows...

PN Junction Lab (New Interactive Front End)
16 Aug 2019   Contributor(s):: Daniel Mejia, Gerhard Klimeck
Visualize and explore PN junction concepts fully interactively: Band Edge Diagrams, Charge Densities, IV and CV Characteristics

PVRDFASP
02 Apr 2019   Contributor(s):: Abdul Rawoof Shaik, Daniel Brinkman', Christian Ringhofer, Igor Sankin, Bedrich Benes, Dmitry Krasikov, Hao Kang, Dragica Vasileska
We introduce a simulator for modeling transport of charge carriers and electrically active defect centers in solar cells by treating them on an equal footing. The details about the solver’s graphical user interface along with numerical algorithms employed are described. The exact...

3 min Research Talk: Predicting and Optimizing Solar Cell Performance with Material/Surface Characteristics
31 Jan 2019   Contributor(s):: Yiheng Zhu
Photovoltaic simulation tools can be utilized to predict device performance before fabrication and experimentation, streamline research processes, and interpret experimental results. Therefore, we developed ContourPV, which simulates various combinations of values of different device...

Stanford 2D Semiconductor (S2DS) Transistor Model
11 Aug 2018  Compact Models  Contributor(s):
By Saurabh Vinayak Suryavanshi^{1}, Eric Pop^{1}
Stanford University
The Stanford 2D Semiconductor (S2DS) model is a physicsbased, compact model for fieldeffect transistors (FETs) based on twodimensional (2D) semiconductors such as MoS2.
https://nanohub.org/publications/18/?v=3

Sebastian Jan Juchnowski
https://nanohub.org/members/197883

Stanford 2D Semiconductor (S2DS) Transistor Model
04 Apr 2016  Compact Models  Contributor(s):
By Saurabh Vinayak Suryavanshi^{1}, Eric Pop^{1}
Stanford University
The Stanford 2D Semiconductor (S2DS) model is a physicsbased, compact model for fieldeffect transistors (FETs) based on twodimensional (2D) semiconductors such as MoS2.
https://nanohub.org/publications/18/?v=2

Newton’s method to solve poisson, continuity, drift diffusion equation?
Closed  Responses: 0
Hi, I want to solve poisson, continuity, drift diffusion equation with newton's method.
Is there any material in nanohub that guides me how to do it?
https://nanohub.org/answers/question/1709

Stanford 2D Semiconductor (S2DS) Transistor Model
22 Oct 2014  Compact Models  Contributor(s):
By Saurabh Vinayak Suryavanshi^{1}, Eric Pop^{1}
Stanford University
The Stanford 2D Semiconductor (S2DS) model is a physicsbased, compact model for fieldeffect transistors (FETs) based on twodimensional (2D) semiconductors such as MoS2.
https://nanohub.org/publications/18/?v=1

Drift Diffusion Video Demonstration
24 Jun 2014   Contributor(s):: Saumitra Raj Mehrotra, Lynn Zentner, Joseph M. Cychosz
This video shows the use of the DriftDiffusion Lab to simulate drift and diffusion carrier mechanisms in a semiconductor. The examples demonstrated will be helpful to a first time user in understanding the use of the tool.

Computational and Experimental Study of Transport in Advanced Silicon Devices
28 Jun 2013   Contributor(s):: Farzin Assad
In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards to the BJT, we will compare and assess the solutions of a physically detailed microscopic model to...

Simulation time
Closed  Responses: 1
Do not know why, but despite the 21 points simulation asked (default), the simulation actually calculates ~500 voltage points and the simulation last 1530’. Did I miss something ?
https://nanohub.org/answers/question/1103

ECE 606 Lecture 11: Interface States Recombination/Carrier Transport
10 Oct 2012   Contributor(s):: Gerhard Klimeck

ECE 656 Lecture 41: Transport in a Nutshell
21 Feb 2012   Contributor(s):: Mark Lundstrom

ECE 656 Lecture 30: Balance Equation Approach I
09 Feb 2012   Contributor(s):: Mark Lundstrom
This lecture should be viewed in the 2009 teaching ECE 656 Lecture 28: Balance Equation Approach I

Romain Lavieville
https://nanohub.org/members/58404

ECE 656 Lecture 6: NearEquilibrium Transport in the Bulk
20 Sep 2011   Contributor(s):: Mark Lundstrom

DriftDiffusion Lab Learning Materials
By completing the DriftDiffusion Lab in ABACUS  Assembly of Basic Applications for Coordinated Understanding of Semiconductors, users will be able to: a) understand the phenomenon of drift and...
https://nanohub.org/wiki/DriftDiffusionPage