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Band Structure Lab
Computes the electronic and phonon structure of various materials in the spatial configuration of bulk , quantum wells, and wires
Version 3.1.14 - published on 16 Sep 2022
doi:10.21981/C9QG-4893 cite this
This tool is closed source.
Citations Non-affiliated (12) | Affiliated (35)
Non-affiliated authors
- Shan-Lin Cheng, Song-Song Lv, Cong Li, Xiao-Yu Dong, Hai-Long You, (2022), "Investigate On DC Characteristics And NBTI Of SiGe Core-Shell Nanosheet FET", 2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology \ICSICT), 2022 IEEE 16th International Conference on Solid-State \& Integrated Circuit Technology \ICSICT), : pg: -, IEEE, (DOI: 10.1109/ICSICT55466.2022.9963473)
- Souvik Mahapatra, N. Parihar, Subhadeep Mukhopadhyay, Nilesh Goel, (2022), "BTI Analysis Tool \BAT) Model Framework-Generation Of Interface Traps", Recent Advances in PMOS Negative Bias Temperature Instability, Recent Advances in PMOS Negative Bias Temperature Instability, Springer: pg: 59-80, SBN : 978-981-16-6119-8, (DOI: https://doi.org/10.1007/978-981-16-6120-4_4)
- Souvik Mahapatra, N. Parihar, Nilotpal Choudhury, R. Tiwari, Tarun Samadder, (2022), "BAT Framework Modeling Of Dimension Scaling In FinFETs And GAA-SNS FETs", Recent Advances in PMOS Negative Bias Temperature Instability, Recent Advances in PMOS Negative Bias Temperature Instability, Springer: pg: 267-285, (DOI: https://doi.org/10.1007/978-981-16-6120-4_13)
- R. Tiwari, N. Parihar, Karansingh Thakor, Hiu-Yung Wong, Souvik Mahapatra, (2019), "TCAD Framework To Estimate The NBTI Degradation In FinFET And GAA NSFET Under Mechanical Strain", IEEE Explore, 2019 International Conference on Simulation of Semiconductor Processes and Devices \SISPAD), : pg: 1-4, IEEE, 978-1-7281-0940-4, (DOI: 10.1109/SISPAD.2019.8870523)
- Shubham Sahay, Mamidala Kumar, (2017), "Physical Insights Into The Nature Of Gate-Induced Drain Leakage In Ultrashort Channel Nanowire FETs", IEEE Transactions on Electron Devices, : pg: 1-7, 0018-9383 (DOI: 10.1109/TED.2017.2688134)
- Abdullah Alharbi, Davood Shahrjerdi, (2016), "Energy Band Engineering Of Flexible Gallium Arsenide Through Substrate Cracking With Pre-tensioned Films", Phys. Status Solidi RRL, : pg: 1-7, (DOI: 10.1002/pssr.201600163)
- David Sukhdeo, Shashank Gupta, Krishna Saraswat, Birendra Dutt, Donguk Nam, (2015), "Anomalous Threshold Reduction From <100> Uniaxial Strain For A Low-Threshold Ge Laser", : pg: 1-11
- N. Neophytou, Oskar Baumgartner, Zlatan Stanojevic, H. Kosina, (2013), "Bandstructure And Mobility Variations In P-type Silicon Nanowires Under Electrostatic Gate Field", Solid-State Electronics, Elsevier, 90: pg: 1-7, (DOI: 10.1016/j.sse.2013.02.053)
- L. Nataraj, F. Xu, M. Bundy, S. Cloutier, (2012), "Optical Properties Of Freestanding Germanium Nanocrystals", OSA Technical Digest , Fiber Lasers and Applications, : pg: 1-3, Optical Society of America
- Sameer Walavalkar, Carrie Hofmann, Andrew Homyk, M. Henry, Harry Atwater, Axel Scherer, (2010), "Tunable Visible and Near-IR Emission from Sub-10 nm Etched Single-Crystal Si Nanopillars", Nanoletters, ACS Publications, 10, 11: pg: 4423-4428, 04, (DOI: 10.1021/nl102140k)
- James Teherani, (2010), "Band-to-band Tunneling in Silicon Diodes and Tunnel Transistors", : pg: -, Massachusetts Institute of Technology, 06
- L. Nataraj, F. Xu, S. Cloutier, (2010), "Enhanced Room-Temperature Light-Emission from Tensile-Strained Germanium Nanocrystals", Nanophotonics, Integrated Photonics Research, Silicon and Nanophotonics, : pg: 1-3, Optical Society of America, 07
Affiliated authors
- Gerhard Klimeck, (2019), "NanoHUB.org - always on: New Paradigms in Global Scientific Knowledge Transfer, Publishing, and Assessment", 2019 8th MEDITERRANEAN CONFERENCE ON EMBEDDED COMPUTING, 2019 8th Mediterranean Conference on Embedded Computing \MECO), : pg: -, IEEE, 978-1-7281-1740-9, (DOI: 10.1109/MECO.2019.8760142)
- Arun Goud, Rangharajan Venkatesan, Anand Raghunathan, K. Roy, (2016), "Asymmetric Underlapped FinFETs For Near-and Super-Threshold Logic At Sub-10nm Technology Nodes", ACM Journal on Emerging Technologies in Computing Systems, 13, 2: pg: 23:1-23:22, 1550-4832/2016/11, (DOI: http://dx.doi.org/10.1145/2967615)
- A. Razavieh, Saumitra Mehrotra, Navab Singh, Gerhard Klimeck, David Jones, J Appenzeller, (2013), "Utilizing The Unique Properties Of Nanowire MOSFETs For RF Applications", Nano Letters, ACS Publications, 13, 4: pg: 1549-1554, (DOI: 10.1021/nl3047078)
- R. Kim, Titash Rakshit, R. Kotlyar, S. Hasan, C.E. Weber, (2011), "Effects Of Surface Orientation On The Performance Of Idealized III--V Thin-Body Ballistic N-MOSFETs", Electron Device Letters, IEEE, 32, 6: pg: 746-748, (DOI: 10.1109/LED.2011.2127440)
- A. Razavieh, Navab Singh, Abhijeet Paul, Gerhard Klimeck, David Jones, J Appenzeller, (2011), "A New Method To Achieve RF Linearity In SOI Nanowire MOSFETs", Radio Frequency Integrated Circuits Symposium \RFIC), 2011 IEEE , Radio Frequency Integrated Circuits Symposium \RFIC), 2011 IEEE, : pg: -, IEEE, 978-1-4244-8293-1 (DOI: 10.1109/RFIC.2011.5940626 )
- Sebastian Steiger, Michael Povolotskyi, H. Park, T Kubis, Gerhard Klimeck, (2011), "NEMO5: A Parallel Multiscale Nanoelectronics Modeling Tool", Nanotechnology, IEEE Transactions On, IEEE, 10, 6: pg: 1464-1474, (DOI: 10.1109/TNANO.2011.2166164)
- Abhijeet Paul, Giuseppe Tettamanzi, Sunhee Lee, Saumitra Mehrotra, N. Collaert, S. Biesemans, S. Rogge, Gerhard Klimeck, (2011), "Interface Trap Density Metrology from Sub-Threshold Transport in Highly Scaled Undoped Si n-FinFETs", AIP, 12: pg: -
- N. Neophytou, Gerhard Klimeck, H. Kosina, (2011), "Subband Engineering for p-Type Silicon Ultra-Thin Layers for Increased Carrier Velocities: An Atomistic Analysis", Journal of Applied Physics, AIP, 109, 5: pg: - 03, 0021-8979, (DOI: 10.1063/1.3556435)
- Abhijeet Paul, Mathieu Lusier, Gerhard Klimeck, (2010), "Modified valence force field approach for phonon disperson: from zinc-blende to nanowires", Journal of Computational Electronics, 9, 3: pg: 160-172, 10, (DOI: 10.1007/s10825-010-0332-9)
- T Boykin, Mathieu Lusier, Gerhard Klimeck, (2010), "Current density and continuity in discretized models", EUROPEAN JOURNAL OF PHYSICS, 31, 5: pg: 1077-1087, 07, (DOI: 10.1088/0143-0807/31/5/010)
- Mincheol Shin, Sunhee Lee, Gerhard Klimeck, (2010), "Computational Study on the Performance of Si Nanowire pMOSFETs Based on the k * p Method", IEEE Transactions on Electron Devices, 57, 9: pg: 2274-2283, 09, 0018-9383, (DOI: 10.1109/TED.2010.2052400)
- A. Abudukelimu, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai, (2010), "Performance of Silicon Ballistic Nanowire MOSFET with Diverse Orientations and Diameters", ECS Transactions, China Semiconductor Technology International Conference 2010, The Electrochemical Society, 27, 1: pg: 1111-1116, ECS, 03, 1938-5862 \p), (DOI: 10.1149/1.3360758)
- Giuseppe Tettamanzi, Abhijeet Paul, G. Landsbergen, J. Verduijn, Sunhee Lee, N. Collaert, S. Biesemans, Gerhard Klimeck, S. Rogge, (2010), "Thermionic Emission as a tool to study transport in undoped nFinFETs", Electron Device Letters, IEEE, 31, 2: pg: 1-3, 01
- Abhijeet Paul, Saumitra Mehrotra, Mathieu Lusier, Gerhard Klimeck, (2010), "Performance Prediction of Ultra-scaled SiGe/Si Core/Shell Electron and Hole Nanowire MOSFETs", Electron Device Letters, 31, 4: pg: 278-280, 03, 0741-3106, (DOI: 10.1109/LED.2010.2040577)
- Hui Zhao, Raseong Kim, Abhijeet Paul, Mathieu Lusier, Gerhard Klimeck, Fa-Jun Ma, Subhash Rustagi, Ganesh Samudra, Navab Singh, Guo-Qiang Lo, Dim-Lee Kwong, (2009), "Characterization and Modeling of Subfemtofarad Nanowire Capacitance Using the CBCM Technique", Electron Device Letters, IEEE, 30, 5: pg: 526-528, 04, (DOI: 10.1109/LED.2009.2020442)
- N. Neophytou, Gerhard Klimeck, H. Kosina, S. Selberherr, (2009), "Dependence of Injection Velocity and Capacitance of Si nanowires on Diameter, Orientation, and Gate Bias : An Atomistic Tight-Binding Study", Simulation of Semiconductor Processes and Devices, 2009. SISPAD \'09. International Conference on , Simulation of Semiconductor Processes and Devices, 2009. SISPAD'09. International Conference on, : pg: -, IEEE, 09, 978-1-4244-3974-8, (DOI: 10.1109/SISPAD.2009.5290245)
- Giuseppe Tettamanzi, G. Landsbergen, Abhijeet Paul, P. Deosarran, N. Collaert, Gerhard Klimeck, S. Biesemans, S. Rogge, Sunhee Lee, (2009), "Sub-threshold study of undoped trigate nFinFET", Thin Solid Films, 518, 9: pg: 2521-2523, 10, (DOI: 10.1016/j.tsf.2009.10.114)
- Abhijeet Paul, Saumitra Mehrotra, Mathieu Lusier, Gerhard Klimeck, (2009), "Surface and Orientation dependence on performance of Trigated Silicon Nanowire MOSFETs", Microelectronics and Electron Devices, 2009 IEEE Workshop, 7th IEEE Workshop on Microelectronics and Electron Devices \WMED 2009).: pg: 1-4, 05, 978-1-4244-3551-7, (DOI: 10.1109/WMED.2009.4816145)
- Abhijeet Paul, Saumitra Mehrotra, Mathieu Lusier, Gerhard Klimeck, (2009), "On the validity of the top of the barrier quantum transport model for ballistic nanowire MOSFETs", Computational Electronics, IWCE '09. 13th International Workshop on, Computational Electronics, 2009. IWCE'09. 13th International Workshop on, IEEE proceedings of the 13th International Workshop on Computational Electronics: pg: 1-4, IEEE, 10, 978-1-4244-3925-6 (DOI: 10.1109/IWCE.2009.5091134)
- N. Neophytou, Gerhard Klimeck, (2009), "Design space for low sensitivity to size variations in [110] PMOS nanowire devices: The implications of anisotrpy in the quantization mass", Nano Letters, ACS Publications, 9, 2: pg: 623-630, 01, (DOI: 10.1021/nl802893m)
- Abhijeet Paul, N. Neophytou, Gerhard Klimeck, (2008), "Orientation dependence of the charge distribution and quantum capacitance in silicon nanowire transistors", Proceedings of TECHCON 2008, Austin, TX: pg: -, Austin, TX, 09
- Gerhard Klimeck, M. McLennan, Mark Lundstrom, George Adams III, (2008), "nanoHUB.org - online simulation and more materials for semiconductors and nanoelectronics in education and research", 8th Ieee Conference On Nanotechnology, 2008. Nano , Nanotechnology, 2008. NANO'08. 8th IEEE Conference on, : pg: 401-404, IEEE, 08
- Gerhard Klimeck, Mathieu Lusier, (2008), "From NEMO1D and NEMO3D to OMEN: moving towards atomistic 3-D quantum transport in nano-scale semiconductors", Electron Devices Meeting, 2008. IEDM 2008. IEEE International, Electron Devices Meeting, 2008. IEDM 2008. IEEE International, San Francisco, CA: pg: 1-4, IEEE, San Francisco, CA, 12, 978-1-4244-2377-4 (DOI: 10.1109/IEDM.2008.4796647 )
- N. Neophytou, Abhijeet Paul, Mark Lundstrom, Gerhard Klimeck, (2008), "Simulations of nanowire transistors: Atomistic vs. Effective Mass Models", Journal of Computational Electronics, Springer, 7, 3: pg: 363-366, 02, (DOI: 10.1007/s10825-008-0188-4)
- Yang Liu, N. Neophytou, Gerhard Klimeck, Mark Lundstrom, (2008), "Band Structure Effects on the Performance of III-V Ultra-thin-body SOI MOSFETs", IEEE Transactions on Electron Devices, 55, 5: pg: 1116-1122, 05, 0018-9383, (DOI: 10.1109/TED.2008.919290)
- Raseong Kim, N. Neophytou, Abhijeet Paul, Gerhard Klimeck, Mark Lundstrom, (2008), "Dimensionality in metal-oxide-semiconductor field-effect transistors: A comparison of one-dimensional and two-dimensional ballistic transistors", Journal Of Vacuum Science And Technology B, AVS, 26, 4: pg: 1628-1631, 08, (DOI: 10.1116/1.2908442)
- Yang Liu, N. Neophytou, T. Low, Gerhard Klimeck, Mark Lundstrom, (2008), "A Tight-Binding study of the Ballistic Injection Velocity for Ultrathin-Body SOI MOSFETs", Electron Devices, IEEE, IEEE, 55, 3: pg: 866-871, 03, (DOI: 10.1109/TED.2007.915056)
- N. Neophytou, Abhijeet Paul, Mark Lundstrom, Gerhard Klimeck, (2008), "Bandstructure Effects in Silicon Nanowire Electron Transport", Electron Devices, IEEE, IEEE, 55, 6: pg: 1286-1297, 06, (DOI: 10.1109/TED.2008.920233)
- Gengchiau Liang, Jie Xiang, Neerav Kharche, Gerhard Klimeck, Charles Lieber, Mark Lundstrom, (2007), "Performance Analysis of a Ge/Si Core/Shell Nanowire Field-Effect Transistor", Nano Letters, ACS Publications, 7, 3: pg: 642-646, 02, (DOI: 10.1021/nl062596f)
- Gerhard Klimeck, (2007), "NanoHUB.org Tutorial: Education Simulation Tools", Nano/micro Engineered And Molecular Systems, 2007. NEMS, Nano/Micro Engineered and Molecular Systems, 2007. NEMS'07. 2nd IEEE International Conference on, : pg: 937-937, IEEE, 01, 1-4244-0610-2, (DOI: 10.1109/NEMS.2007.351992)
- N. Neophytou, Abhijeet Paul, Mark Lundstrom, Gerhard Klimeck, (2007), "Self-Consistent Simulations of Nanowire Transistors Using Atomistic Basis Sets", Simulation Of Semiconductor Processes And Devices, 2005. SISPAD 2005. International Conference On, Simulation of Semiconductor Processes and Devices 2007, Springer, 12: pg: 217-220, 09, 978-3-211-72860-4, (DOI: 10.1007/978-3-211-72861-1_51)
- Jian Wang, A. Rahman, Gerhard Klimeck, Mark Lundstrom, (2005), "Bandstructure and Orientation Effects in Si and Ge Nanowire FETs", Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International , Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International, IEEE: pg: 1-4, IEEE, 12, 0-7803-9268-X (DOI: 10.1109/IEDM.2005.1609399)
- A. Rahman, Gerhard Klimeck, Mark Lundstrom, (2005), "Novel channel materials for ballistic nanoscale MOSFETs-bandstructure effects", Electron Devices Meeting, 2005. Iedm Technical Digest. Ieee International, Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International, : pg: 604-, IEEE, 12, (DOI: 10.1109/IEDM.2005.1609421)
- Jian Wang, A. Rahman, Avik Ghosh, Gerhard Klimeck, Mark Lundstrom, (2005), "On the validity of the parabolic effective-mass approximation for the I-V calculation of silicon nanowire transistors", IEEE Transactions on Electron Devices, IEEE, 52, 7: pg: 1589-1595, 07, 1557-9646, (DOI: 10.1109/TED.2005.850945)
- A. Rahman, Gerhard Klimeck, Mark Lundstrom, T Boykin, (2004), "Bandstructure Effects in Ballistic Nanoscale MOSFETs", IEEE IEDM, Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International, San Francisco, CA: pg: 139-142, IEEE, San Francisco, CA, 12, 0-7803-8684-1, (DOI: 10.1109/IEDM.2004.1419089)