09 Demonstration of Vertical GaN PN Diode with Step-etched Triple zone JTE
14 Oct 2020 | | Contributor(s):: Hyun-Soo Lee, Yuxuan Zhang, Zhaoying Chen, Mohammad Wahidur Rahman, Hongping Zhao, Siddharth Rajan
We have demonstrated significantly improved BV of vertical GaN PN diode with STJTE without any degradation of forward characteristics. This is the first demonstration of a step-etched multiple zone edge termination for III-Nitride technology.
Breakdown Voltage & Current Density Calculator for meso scale gaps
14 Jul 2016 | | Contributor(s):: Sebastian Camilo Mendoza Rincon, Siva Sashank Tholeti, Alina Alexeenko
Calculates breakdown voltage and Fowler-Nordheim current density for meso scale gaps