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Electron Transport in Schottky Barrier CNTFETs
Papers | 24 Oct 2017 | Contributor(s):: Igor Bejenari
This resource has been removed at the request of the author.A given review describes models based on Wentzel-Kramers-Brillouin approximation, which are used to obtain I-V characteristics for ballistic CNTFETs with Schottky-Barrier (SB) contacts. The SB is supposed to be an exponentially...
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Variation-Aware Nanosystem Design Kit (NDK)
Downloads | 30 Jul 2015 | Contributor(s):: Gage Hills
Carbon nanotube field-effect transistors (CNFETs) are promising candidates for building energy-efficient digital systems at highly scaled technology nodes. However, carbon nanotubes (CNTs) are inherently subject to variations that reduce circuit yield, increase susceptibility to noise, and...
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High-Frequency Carbon Nanotube Transistors: Fabrication, Characterization, and Compact Modeling
Online Presentations | 14 Jan 2015 | Contributor(s):: Martin Claus
The talk covers different aspects in the manufacturing of high-frequency CNTFETs, electrical device characterization and compact modeling of CNTFETs. The applicability of the semi physics-based compact model CCAM for designing digital and analog HF circuits is shown. In particular, the model...
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High-Frequency Carbon Nanotube Transistors: A Multi-Scale Simulation Framework
Online Presentations | 07 Jan 2015 | Contributor(s):: Martin Claus
The talk gives an overview on a multi-scale simulation framework with which this question can be answered. Methods to study the steady-state and transient quantum and semi-classical transport phenomena in CNTFETs and their application for the optimization of CNTFETs will be discussed. Special...
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The Road Ahead for Carbon Nanotube Transistors
Online Presentations | 09 Jul 2013 | Contributor(s):: Aaron Franklin
In this talk, recent advancements in the nanotube transistor field will be reviewed, showing why CNTFETs are worth considering now more than ever. Then, the material- and device-related challenges to realizing a nanotube-driven digital technology will be covered.
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Carbon Nanotube Electronics: Modeling, Physics, and Applications
Papers | 28 Jun 2013 | Contributor(s):: Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-k gate...
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A CNTFET-Based Nanowired Induction Two-Way Transducers
Papers | 05 Sep 2012 | Contributor(s):: Rostyslav Sklyar
A complex of the induction magnetic field two-way nanotransducers of the different physical values for both the external and implantable interfaces in a wide range of arrays are summarized. Implementation of the nanowires allows reliable transducing of the biosignals' partials and bringing of...
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CNT Mobility
Tools | 26 Apr 2009 | Contributor(s):: Yang Zhao, Albert Liao, Eric Pop
Simulate field effect carrier mobility in back-gated CNTFET devices at low field
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CNTbands: First-Time User Guide
Teaching Materials | 14 Jun 2009 | Contributor(s):: Xufeng Wang, Youngki Yoon
This is a simple guide designed for first-time users of CNTbands. It gives a brief introduction of the tool and a series of tutorials to help users learn the basics of CNTbands.NCN@Purdue
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Cylindrical CNT MOSFET Simulator
Tools | 22 Jul 2008 | Contributor(s):: Gloria Wahyu Budiman, Yunfei Gao, Xufeng Wang, Siyu Koswatta, Mark Lundstrom
Simulate 2-D electrons transport in CNTFET
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What Promises do Nanotubes and Nanowires Hold for Future Nanoelectronics Applications?
Online Presentations | 18 Feb 2008 | Contributor(s):: Joerg Appenzeller
Various low-dimensional materials are currently explored for future electronics applications. The common ground for all these structures is that the surface related impact can no longer be ignored – the common approach applied to predict properties of bulk-type three-dimensional (3D) materials....
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The Effect of Physical Geometry on the Frequency Response of Carbon Nanotube Field-Effect Transistors
Online Presentations | 03 Aug 2007 | Contributor(s):: Dave Lyzenga
In order for carbon nanotube (CNT) electrical devices to be fabricated, it is necessary to obtain modifiable operation characteristics. Developing parametric equations to achieve this controllability in the vertical field-effect transistor (FET) design is an important first step toward...
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Schottky-Barrier CNFET
Tools | 16 Mar 2007 | Contributor(s):: Arash Hazeghi, Tejas Krishnamohan, H.-S. Philip Wong
Simulate Carbon Nanotube field Effect transistor with Schottky Barriers
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CNTFET Lab
Tools | 13 Mar 2006 | Contributor(s):: Neophytos Neophytou, Shaikh S. Ahmed, POLIZZI ERIC, Gerhard Klimeck, Mark Lundstrom
Simulates ballistic transport properties in 3D Carbon NanoTube Field Effect Transistor (CNTFET) devices
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Carbon Nanotube Electronics: Modeling, Physics, and Applications
Papers | 30 Oct 2006 | Contributor(s):: Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-κ...