In order for carbon nanotube (CNT) electrical devices to be fabricated, it is necessary to obtain modifiable operation characteristics. Developing parametric equations to achieve this controllability in the vertical field-effect transistor (FET) design is an important first step toward fabrication. The capacitances associated with the physical geometry of the porous anodic alumina (PAA)-based CNTFET are explored and developed into a parametric equation for the unity current gain frequency (fT) of the device. Comparisons are drawn between predicted vertical CNTFET characteristics and those of an ideal, back-gated counterpart in the areas of unity current gain frequency and current density.
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