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CCAM Compact Carbon Nanotube Field-Effect Transistor Model
27 Apr 2022 | Compact Models | Contributor(s):
By Michael Schroter1, Manojkumar Annamalai2, Max Haferlach3, Martin Claus3
1. UCSD 2. Technische Universitaet Dresden 3. Technische Universität Dresden
CCAM is a semi-physical carbon nanotube field-effect transistor model applicable for digital, analog and high frequency applications.
https://nanohub.org/publications/62/?v=3
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Tulasi Naga Jyothi Kolanti
https://nanohub.org/members/216959
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Elmira Tavakkoli
https://nanohub.org/members/196743
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Electron Transport in Schottky Barrier CNTFETs
Papers | 24 Oct 2017 | Contributor(s):: Igor Bejenari
This resource has been removed at the request of the author.A given review describes models based on Wentzel-Kramers-Brillouin approximation, which are used to obtain I-V characteristics for ballistic CNTFETs with Schottky-Barrier (SB) contacts. The SB is supposed to be an exponentially...
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How to specify the type
Q&A|Closed | Responses: 0
Dear
I do not know how to specify the FETtype when using the VSCNFET model?
Would you mind if I ask you to answer this issue
Thank you...
https://nanohub.org/answers/question/1953
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Jaigram Shailaja
https://nanohub.org/members/176878
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Mahtab Talayedar
https://nanohub.org/members/172208
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Gagnesh Kumar
am an researcher working in CNT-FET Technology.
https://nanohub.org/members/168146
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Al-Amin Sheikh
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Sanjoy Roy
https://nanohub.org/members/137899
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how can i use fettoy with matlab
Q&A|Closed | Responses: 0
hi all,
i am doing a research...
https://nanohub.org/answers/question/1635
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CCAM Compact Carbon Nanotube Field-Effect Transistor Model
06 Oct 2015 | Compact Models | Contributor(s):
By Michael Schroter1, Max Haferlach2, Martin Claus2
1. UCSD 2. Technische Universität Dresden
CCAM is a semi-physical carbon nanotube field-effect transistor model applicable for digital, analog and high frequency applications.
https://nanohub.org/publications/62/?v=2
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Variation-Aware Nanosystem Design Kit (NDK)
Downloads | 30 Jul 2015 | Contributor(s):: Gage Hills
Carbon nanotube field-effect transistors (CNFETs) are promising candidates for building energy-efficient digital systems at highly scaled technology nodes. However, carbon nanotubes (CNTs) are inherently subject to variations that reduce circuit yield, increase susceptibility to noise, and...
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Help, Error with simulation
Q&A|Open | Responses: 1
Dears
I tried to simulate an LNA using Virtual-Source Carbon Nanotube Field-Effect Transistor using HSPICE 2008,03 but it gave me this error " hsp-vacomp: Error:...
https://nanohub.org/answers/question/1540
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Himanshu Rai
https://nanohub.org/members/117669
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High-Frequency Carbon Nanotube Transistors: Fabrication, Characterization, and Compact Modeling
Online Presentations | 14 Jan 2015 | Contributor(s):: Martin Claus
The talk covers different aspects in the manufacturing of high-frequency CNTFETs, electrical device characterization and compact modeling of CNTFETs. The applicability of the semi physics-based compact model CCAM for designing digital and analog HF circuits is shown. In particular, the model...
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High-Frequency Carbon Nanotube Transistors: A Multi-Scale Simulation Framework
Online Presentations | 07 Jan 2015 | Contributor(s):: Martin Claus
The talk gives an overview on a multi-scale simulation framework with which this question can be answered. Methods to study the steady-state and transient quantum and semi-classical transport phenomena in CNTFETs and their application for the optimization of CNTFETs will be discussed. Special...
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Md Zubair Ebne Rafique
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Indranil Basu
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The Road Ahead for Carbon Nanotube Transistors
Online Presentations | 09 Jul 2013 | Contributor(s):: Aaron Franklin
In this talk, recent advancements in the nanotube transistor field will be reviewed, showing why CNTFETs are worth considering now more than ever. Then, the material- and device-related challenges to realizing a nanotube-driven digital technology will be covered.