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Pooja Sharma
https://nanohub.org/members/292172
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Teakhoon Lim
https://nanohub.org/members/278747
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Sai Praneet Toram
https://nanohub.org/members/218955
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Shailesh M. Keshkamat
https://nanohub.org/members/216195
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Nikolaos Makris
https://nanohub.org/members/160697
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Udoy Paul
https://nanohub.org/members/68281
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Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling
28 Mar 2012 | | Contributor(s):: Souvik Mahapatra
This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner SiON...
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Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Fast and Ultra-fast Characterization Methods (Part 1 of 3)
28 Mar 2012 | | Contributor(s):: Souvik Mahapatra
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Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Predictive Modeling (Part 3 of 3)
28 Mar 2012 | | Contributor(s):: Souvik Mahapatra
This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner SiON...
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Negative Bias Temperature Instability (NBTI) in p-MOSFETs: The Impact of Gate Insulator Processes (Part 2 of 3)
28 Mar 2012 | | Contributor(s):: Souvik Mahapatra
This presentation is part 2 on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner...
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Dhawal Dilip Mahajan
https://nanohub.org/members/65429
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Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling (2011)
11 May 2011 | | Contributor(s):: Souvik Mahapatra
This is a presentation on Negative Bias Temperature Instability, or in short NBTI, observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to...
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Tonio Buonassisi
Tonio Buonassisi is author of over 110 journal, conference, and workshop articles focused on photovoltaics. He received his Ph.D. from the University of California, Berkeley in 2006, where he...
https://nanohub.org/members/54157
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Kei May Lau
Chair Professor of Electrical and Electronic Engineering at Hong Kong University of Science and TechnologyProfessor Kei May Lau received the B.S. and M.S. degrees in physics from the University of...
https://nanohub.org/members/53046
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Keithley 4200-SCS Lecture 12: Ultra-fast I-V for Pulsed and Transient Characterization
24 Jan 2011 | | Contributor(s):: Lee Stauffer
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Keithley 4200-SCS Lecture 01: Introduction - System Overview - DC I-V Source Measurement
20 Jan 2011 | | Contributor(s):: Lee Stauffer
Introduction to Device Characterization -System Overview: System Architecture, Hardware Features and Software Features -Precision DC I-V Source-Measure Features and Concepts.
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Keithley 4200-SCS Lecture 02: Basics of Keithley Interactive Test Environment (KITE)
20 Jan 2011 | | Contributor(s):: Lee Stauffer
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Keithley 4200-SCS Lecture 03: More KITE Setup and Features
20 Jan 2011 | | Contributor(s):: Lee Stauffer
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Keithley 4200-SCS Lecture 04: Speed and Timing Considerations
20 Jan 2011 | | Contributor(s):: Lee Stauffer
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Keithley 4200-SCS Lecture 05: Low Current and High Resistance Measurements
20 Jan 2011 | | Contributor(s):: Lee Stauffer