Resources (1-7 of 7)

1. 47 Electrostatic Engineering in BaTiO3/β-Ga2O3 Heterostructure Field Effect Transistors

   Online Presentations | 14 Oct 2020 | Contributor(s):: Nidhin Kurian Kalarickal, Zhanbo Xia, Wyatt Moore, Joe McGlone, Aaron R. Arehart, Steven A. Ringel, Siddharth Rajan

   We report on the design and demonstration of BaTiO3/β-Ga2O3 based lateral field effect transistors with superior breakdown performance. Utilizing the high-k low-k dielectric interface allows significant improvement in electrostatic field management giving a breakdown voltage of 1.1 KV at 5...

2. 09 Demonstration of Vertical GaN PN Diode with Step-etched Triple zone JTE

   Online Presentations | 14 Oct 2020 | Contributor(s):: Hyun-Soo Lee, Yuxuan Zhang, Zhaoying Chen, Mohammad Wahidur Rahman, Hongping Zhao, Siddharth Rajan

   We have demonstrated significantly improved BV of vertical GaN PN diode with STJTE without any degradation of forward characteristics. This is the first demonstration of a step-etched multiple zone edge termination for III-Nitride technology.

3. DRC202 Device Research Conference Technical Presentations

   Series | 14 Oct 2020 | Contributor(s):: Siddharth Rajan (editor), Zhihong Chen (editor), Becky (R. L.) Peterson

   For over seven decades, the Device Research Conference (DRC) has brought together leading scientists, researchers and students to share their latest discoveries in device science, technology and modeling. Notably, many of the first public disclosures of key device technologies were made at the...

4. 25 Linearity by Synthesis: An Intrinsically Linear AlGaN/GaN-on-Si Transistor with OIP3/(F-1)PDC of 10.1 at 30 GHz

   Online Presentations | 21 Sep 2020 | Contributor(s):: Woojin Choi, Venkatesh Balasubramanian, Peter M. Asbeck, Shadi Dayeh

   The concept of an intrinsically synthesizable linear device is demonstrated. It was implemented by changing only the device layout; additional performance gains can be attained by further materials engineering.

5. A3 Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics

   Online Presentations | 18 Sep 2020 | Contributor(s):: Yury Yuryevich Illarionov, A.G. Banshchikov, Theresia Knobloch, D.K. Polyushkin, S. Wachter, V.V. Fedorov, M. Stöger-Pollach, M.I. Vexler, N.S. Sokolov, T. Grasser

   We fabricated high-quality crystalline 1−2nm CaF2 films and successfully used them for MoS2 FETs with record-thin gate insulators. For the first time we demonstrated MoS2 FETs with simultaneously sub-1nm EOT insulators and sub-100nm channel length and found that these devices can exhibit...

6. 12 The Influence of the Gate Trench Orientation to the crystal Plane on the Conduction Properties of Vertical GaN MISFETs for Laser Driving Applications

   Online Presentations | 18 Sep 2020 | Contributor(s):: E. Bahat Treidel, O. Hilt, H. Christopher, A. Klehr, A. Ginolas, A. Liero, J. Würfl

   In this work the development of vertical GaN MISFET technology is focused on pulsed laser driving applications with maximum voltages < 100 V (Fig. 1). Drivers for pulsed lasers are required to deliver very high currents up to 250 A in very short pulse lengths of 3 ns to 10 ns [4].

7. DRC 2020 Short Course: Devices for IoT – Device Opportunities in the Emerging Era of Internet of Things

   Courses | 29 Jun 2020 | Contributor(s):: Swaroop Ghosh, Younghyun Kim, Shreyas Sen, Michael Goldflam (editor), Saptarshi Das (editor)