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Three Ideas to Achieve Negative Resistance
Papers | 15 Jul 2022
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2DFET
Tools | 18 Feb 2021 | Contributor(s):: Ning Yang, Tong Wu, Jing Guo
Calculate the I-V characteristics of field-effect transistors (FETs) based on monolayer two-dimensional (2D) materials.
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A3 Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics
Online Presentations | 18 Sep 2020 | Contributor(s):: Yury Yuryevich Illarionov, A.G. Banshchikov, Theresia Knobloch, D.K. Polyushkin, S. Wachter, V.V. Fedorov, M. Stöger-Pollach, M.I. Vexler, N.S. Sokolov, T. Grasser
We fabricated high-quality crystalline 1−2nm CaF2 films and successfully used them for MoS2 FETs with record-thin gate insulators. For the first time we demonstrated MoS2 FETs with simultaneously sub-1nm EOT insulators and sub-100nm channel length and found that these devices can exhibit...
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The Development and Use of Dopants to Modulate the Electrical Properties of Conjugated Polymers
Online Presentations | 05 Feb 2019 | Contributor(s):: Seth R. Marder
In this talk we will report on recent developments pertaining to surface modifiers and both n‐ and p‐dopants that could impact the charge injection/collection processes in organic light emitting diodes, organic field effect transistors, and organic photovoltaic and hybrid organic/inorganic...
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Mahmudah Salwa G.
https://nanohub.org/members/208056
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Simulation, design software for VFET, vertical field effect transistor or schottky diodes?
Q&A|Closed | Responses: 4
Please suggest software, preferably open source and no cost software, to simulate and design VFET.
Please suggest software for schottky diode also.
If possible, please...
https://nanohub.org/answers/question/2043
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Semiconductor & graphene mixtures, printable, for FETs, VFETS?
Q&A|Closed | Responses: 2
We tried synthesizing diketopyrroles, and we could not make them.
We have fiddled with P3HT, and we are concerned about its long term compatibility with our ionic liquid...
https://nanohub.org/answers/question/2036
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Need to hire a nanohub freelancer to model a graphene OFET, vertical transistor -- fees MOSFET
Q&A|Closed | Responses: 2
I need to hire a freelancer to model and predict a FET.
I am not familiar with FETTOY.
You will use a program like FETTOY to help us optimize the design of a FET...
https://nanohub.org/answers/question/2033
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A Z M Nowzesh Hasan
https://nanohub.org/members/183710
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15-Band Spectral Envelope Function Formalism Applied to Broken Gap Tunnel Field-Effect Transistors
Online Presentations | 01 Nov 2016 | Contributor(s):: Devin Verreck, Maarten Van de Put, Anne Verhulst, Bart Soree, G. Groeseneken, Ashish Dabral
IWCE 2015 presentation.
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Flexible Transition Metal Dichalcogenide Field-Effect Transistor (TMDFET) Model
07 Apr 2016 | Compact Models | Contributor(s):
By Morteza Gholipour1, Deming Chen2
1. Babol University of Technology 2. University of Illinois at Urbana-Champaign
Verilog-A model of flexible transition metal dichalcogenide field-effect transistors (TMDFETs), considering effects when scaling the transistor size down to the 16-nm technology node.
https://nanohub.org/publications/134/?v=1
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Flexible Transition Metal Dichalcogenide Field-Effect Transistor (TMDFET) HSPICE Model
Downloads | 08 Feb 2016 | Contributor(s):: Morteza Gholipour, Ying-Yu Chen, Deming Chen
SPICE model of flexible transition metal dichalcogenide field-effect transistors (TMDFETs) for different types of materials (MoS2, MoSe2, MoTe2, WS2, WSe2), considering effects when scaling the transistor size down to the 16-nm technology node. This model can be used for circuit-level simulations.
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Released Resonant Body Transistor with MIT Virtual Source (RBT-MVS) Model
30 Aug 2015 | Compact Models | Contributor(s):
By Bichoy W. Bahr1, Dana Weinstein1, Luca Daniel1
Massachusetts Institute of Technology (MIT)
An RBT is a micro-electromechanical (MEM) resonator with a transistor (FET) incorporated into the resonator structure to sense the mechanical vibrations. This is a fully-featured spice-compatible...
https://nanohub.org/publications/72/?v=1
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how to simulate insulator in a GNRFET with matlab?
Q&A|Closed | Responses: 0
I want to apply gate voltage on a graphene nanoribbon as a channel in a GNRFET. then I want to solve poisson equation but I need to know the voltage on channel as the boundary...
https://nanohub.org/answers/question/1583
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Neel Chatterjee
https://nanohub.org/members/118363
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High-Frequency Carbon Nanotube Transistors: Fabrication, Characterization, and Compact Modeling
Online Presentations | 14 Jan 2015 | Contributor(s):: Martin Claus
The talk covers different aspects in the manufacturing of high-frequency CNTFETs, electrical device characterization and compact modeling of CNTFETs. The applicability of the semi physics-based compact model CCAM for designing digital and analog HF circuits is shown. In particular, the model...
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Hongsik Jeong
https://nanohub.org/members/108815
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Rajesh kumar R
https://nanohub.org/members/105985
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George Kubas
Under Graduate Degree- Chemical Engineer at YSUCurrently in PhD. Program for Materials Science
https://nanohub.org/members/99735
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SPICE Model of Graphene Nanoribbon FETs (GNRFET)
Downloads | 12 Jul 2013 | Contributor(s):: Ying-Yu Chen, Morteza Gholipour, Artem Rogachev, Amit Sangai, Deming Chen
This is a SPICE compatible model for both MOS- and Schottky-Barrier-type Graphene Nano-Ribbons Field-Effect Transistor. These MOS-GNRFET and SB-GNRFET models are implemented in HSPICE and can be used for circuit simulations. The model is implemented based on the...