Find information on common issues.
Ask questions and find answers from other users.
Suggest a new site feature or improvement.
Check on status of your tickets.
Flexible Transition Metal Dichalcogenide Field-Effect Transistor (TMDFET) Model
07 Apr 2016 | Compact Models | Contributor(s):
By Morteza Gholipour1, Deming Chen2
1. Babol University of Technology 2. University of Illinois at Urbana-Champaign
Verilog-A model of flexible transition metal dichalcogenide field-effect transistors (TMDFETs), considering effects when scaling the transistor size down to the 16-nm technology node. This...
Flexible Transition Metal Dichalcogenide Field-Effect Transistor (TMDFET) HSPICE Model
08 Feb 2016 | Downloads | Contributor(s): Morteza Gholipour, Ying-Yu Chen, Deming Chen
SPICE model of flexible transition metal dichalcogenide field-effect transistors (TMDFETs) for different types of materials (MoS2, MoSe2, MoTe2, WS2, WSe2), considering effects when scaling the...
CCAM Compact Carbon Nanotube Field-Effect Transistor Model
06 Oct 2015 | Compact Models | Contributor(s):
By Michael Schroter1, Max Haferlach2, Martin Claus2
1. UCSD 2. Technische Universität Dresden
CCAM is a semi-physical carbon nanotube field-effect transistor model applicable for digital, analog and high frequency applications.
Released Resonant Body Transistor with MIT Virtual Source (RBT-MVS) Model
30 Aug 2015 | Compact Models | Contributor(s):
By Bichoy W. Bahr1, Dana Weinstein1, Luca Daniel1
Massachusetts Institute of Technology (MIT)
An RBT is a micro-electromechanical (MEM) resonator with a transistor (FET) incorporated into the resonator structure to sense the mechanical vibrations. This is a fully-featured spice-compatible...
how to simulate insulator in a GNRFET with matlab?
Closed | Responses: 0
I want to apply gate voltage on a graphene nanoribbon as a channel in a GNRFET. then I want to solve poisson equation but I need to know the voltage on channel as the boundary...
Rajesh kumar R
SPICE Model of Graphene Nanoribbon FETs
12 Jul 2013 | Downloads | Contributor(s): Ying-Yu Chen, Morteza Gholipour, Artem Rogachev, Amit Sangai, Deming Chen
Graphene Nano-Ribbons Field-Effect Transistors HSPICE implementation based on the following two publications:
 Y-Y. Chen, A. Rogachev, A. Sangai, G. Iannaccone, G. Fiori, and D. Chen (2013)....
Device Physics and Simulation of Silicon Nanowire Transistors
28 Jun 2013 | Papers | Contributor(s): Jing Wang
As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the...
0.0 out of 5 stars
20 May 2011 | Tools | Contributor(s): Eric Pop, Feifei Lian
Simulate the electrical and thermal properties of a graphene field-effect transistor.
What simulation for simulating CNTFET as biosensor applications ?
I used simulator such as fettoy and moscnt for device simulation. However, I tried to find a mechanism for utilizing the CNTFET Fettoy as biosensor by relation the permittivity of the Gate...
OMEN Nanowire: solve the challenge
05 Feb 2011 | Teaching Materials | Contributor(s): SungGeun Kim
This document includes a challenging problems for OMEN Nanowire users. It challenges users to establish a nanowire transistor structure such that it satisfy the ITRS 2010 requirements.
26 Apr 2009 | Tools | Contributor(s): Yang Zhao, Albert Liao, Eric Pop
Simulate field effect carrier mobility in back-gated CNTFET devices at low field
Band Structure Lab Demonstration: Bulk Strain
12 Jun 2009 | Animations | Contributor(s): Gerhard Klimeck
This video shows an electronic structure calculation of bulk Si using Band Structure Lab. Several powerful features of this tool are demonstrated.
ECE 612 Lecture 26: Heterostructure FETs
10 Dec 2008 | Online Presentations | Contributor(s): Mark Lundstrom
2) Heterojunction review,
3) Modulation doping,
4) I-V characteristics,
5) Device Structure / Materials,
Lecture 6: Quantum Transport in Nanoscale FETs
5.0 out of 5 stars
12 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom
The previous lessons developed an analytical (or almost analytical) theory of the nanoscale FET, but to properly treat all the details, rigorous computer simulations are necessary. This lecture...
ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors
16 Jul 2008 | Tools | Contributor(s): Xufeng Wang, Dragica Vasileska, Gerhard Klimeck
One-stop-shop for teaching semiconductor device education