ECE 606: Solid State Devices I

By Gerhard Klimeck

Electrical and Computer Engineering, Purdue University, West Lafayette, IN

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Abstract

This course provides the graduate-level introduction to understand, analyze, characterize and design the operation of semiconductor devices such as transistors, diodes, solar cells, light-emitting devices, and more.

The material will primarily appeal to electrical engineering students whose interests are in applications of semiconductor devices in circuits and systems. The treatment is physics-based, provides derivations of the mathematical descriptions, and enables students to quantitatively analyze device internal processes, analyze device performance, and begin the design of devices given specific performance criteria.

Technology users will gain an understanding of the semiconductor physics that is the basis for devices. Semiconductor technology developers may find it a useful starting point for diving deeper into condensed matter physics, statistical mechanics, thermodynamics, and materials science. The course presents an electrical engineering perspective on semiconductors, but those in other fields may find it a useful introduction to the approach that has guided the development of semiconductor technology for the past 50+ years.

The course can also be found on nanoHUB.org as a nanoHUB-U course at https://nanohub.org/courses/ece606 or on edX at https://www.edx.org/course/solid-state-devices-1

Bio

Gerhard Klimeck Gerhard Klimeck is the Reilly Director of the Center for Predictive Materials and Devices (c-PRIMED) and the Network for Computational Nanotechnology (NCN) and a Professor of Electrical and Computer Engineering at Purdue University. He helped to create nanoHUB.org which now serves over 1.8 million users globally. Previously he worked with Texas Instruments and NASA/JPL/Caltech. He published over 525 printed scientific articles that resulted in an h-index of 67 in Google Scholar. He is a fellow of the Institute of Physics (IOP), a fellow of the American Physical Society (APS), and a Fellow of IEEE.

Prof. Klimeck’s research interest is the modeling of nanoelectronic devices, bridging the gap between material science and device engineering, and impact studies through science gateways. He drives the development of the Nanoelectronic Modeling Tool NEMO5. NEMO, the nanoelectronic modeling software built in his research group established the state-of-the-art in atomistic quantum transport modeling. NEMO and its descendants are now being used at major semiconductor companies for advanced transistor designs and commercialized.

Dr. Klimeck was the Technical Group Supervisor of the High Performance Computing Group and a Principal Scientist at the NASA Jet Propulsion Laboratory, California Institute of Technology. Previously he was a member of technical staff at the Central Research Lab of Texas Instruments where he served as manager and principal architect of the Nanoelectronic Modeling (NEMO 1-D) program. At JPL and Purdue Gerhard developed the Nanoelectronic Modeling tool (NEMO 3-D ) for multimillion atom simulations. Dr. Klimeck received his PH.D. in 1994 on Quantum Transport from Purdue Univeristyand his German electrical engineering degree in experimental studies of laser noise propagation in 1990 from Ruhr-University Bochum.

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Lecture Number/Topic Online Lecture Video Lecture Notes Supplemental Material Suggested Exercises
ECE 606 L1.1: Solid State Devices View HTML
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ECE 606 L1.2: Basic Device Operations – Raising 1,000 Questions View HTML
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ECE 606 L1.3: Course Content and Requirements View HTML
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ECE 606 L2.1: Materials - Typical Semiconducting Materials View HTML
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ECE 606 L2.2: Materials - Typical Applications of Elemental and Compound Semiconductors View HTML
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ECE 606 L2.3: Materials - Atomic Positions and Bond Orientations View HTML
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ECE 606 L3.1: Crystals - Crystal Definitions View HTML
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ECE 606 L3.1: Crystals - Crystal Definitions View HTML
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ECE 606 L3.2: Crystals - Tables of Bravais Lattice View HTML
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ECE 606 L3.3: Crystals - Density of Definitions and Applications to Common Material View HTML
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ECE 606 L3.4 Crystals - Surfaces, Miller Index View HTML
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ECE 606 L4.1: Quantum Mechanics - Classic Systems View HTML
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ECE 606 L4.2: Quantum Mechanics - Strange Experimental Resuls => The Advent of Quantum Mechanics View HTML
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ECE 606 L4.3 Quantum Mechanics - Why Do We Need Quantum Mechanics? View HTML
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ECE 606 L4.4: Quantum Mechanics - Formulation of Schrödinger's Equation View HTML
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ECE 606 L5.1 Analytical Solutions - Free and Tightly Bound Electrons View HTML
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ECE 606 L5.2 Analytical Solutions - Electrons in a Finite Potential Well View HTML
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ECE 606 L6.1: Electron Tunneling - Transfer Matrix Method View HTML
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ECE 606 L6.2: Electron Tunneling - Tunneling Through a Single Barrier View HTML
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ECE 606 L6.3: Electron Tunneling - Tunneling Through a Double Barrier Structure View HTML
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ECE 606 L6.4: Electron Tunneling - Tunneling Through N Barriers - Formation of Bandstructure View HTML
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ECE 606 L6.5: Electron Tunneling - Analytical and Numerical Solution Strategies View HTML
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ECE 606 L7.1: Bandstructure - Problem Formulation View HTML
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ECE 606 L7.2 Bandstructure - Solutions View HTML
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ECE 606 L7.3: Bandstructure - Band Properties View HTML
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ECE 606 L8.1: Brillouin Zone and Reciprocal Lattice - 1D Problems View HTML
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ECE 606 L8.2: Brillouin Zone and Reciprocal Lattice - 2D Problems View HTML
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ECE 606 L8.3: Brillouin Zone and Reciprocal Lattice - 3D Problems View HTML
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ECE 606 L9.1: Constant Energy Surfaces View HTML
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ECE 606 L9.2: Density of States View HTML
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ECE 606 L10.1 Bandstructure - E(k) Diagrams in Specific Crystal Directions View HTML
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ECE 606 L10.2: Bandstructure - Constant Energy Surfaces - Effective Mass Tensor View HTML
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ECE 606 L10.3: Bandstructure - Density of States Effective Mass View HTML
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ECE 606 L11.1: Bandgap Measurements View HTML
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ECE 606 L11.2: Effective Mass Measurements View HTML
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ECE 606 L12.1: Rules of Filling Electronic States View HTML
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ECE 606 L12.2: Derivation of Fermi-Dirac Statistics: Three Techniques View HTML
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ECE 606 L12.3: Intrinsic Carrier Concentration View HTML
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ECE 606 L13: Band Diagrams View HTML
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ECE 606 L14.1: Doping - Basic Concepts of Donors and Acceptors View HTML
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ECE 606 L14.2 Doping - Statistics of Donor and Acceptor Levels View HTML
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ECE 606 L14.3: Temperature Dependence of Carrier Concentration View HTML
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ECE 606 L14.4: Multiple Doping, Co-Doping, And Heavy-Doping View HTML
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ECE 606 L15.1: Non-Equilibrium - Steady State, Transient, Equilibrium View HTML
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ECE 606 L15.2 Non-Equilibrium - Recombination & Generation Overview View HTML
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ECE 606 L16.1: Recombination & Generation - Motivation of R-G Formula View HTML
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ECE 606 L16.2.1 SRH Formula - Trap Assisted Recombination Rates View HTML
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ECE 606 L16.2.2: SRH Formula - Capture and Emission Relationship (n1 and p1) View HTML
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ECE 606 L16.2.3: SRH Formula - Steady State Trap Population View HTML
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ECE 606 L16.2.4: SRH Formula - Recombination-Generation Rate View HTML
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ECE 606 L16.3: Applications of SRH Formula for Special Cases View HTML
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ECE 606 L16.4: Recombination & Generation - Direct and Auger Recombination View HTML
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ECE 606 L16.5: Recombination & Generation - Nature of Interface States View HTML
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ECE 606 L16.6 SRH Formula Adapted to Interface States View HTML
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ECE 606 L16.7: Surface Recombination in Depletion Region View HTML
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ECE 606 L17.1: Transport - Drift Current View HTML
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ECE 606 L17.2 Transport - Mobility View HTML
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ECE 606 L17.3: Transport - Carrier Concentration from Hall Effect View HTML
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ECE 606 L17.4 Transport - Physics of Diffusion – Einstein Relationship View HTML
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ECE 606 L18.1: Semiconductor Equations - Continuity Equations View HTML
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ECE 606 L18.2 Semiconductor Equations - Analytical Solutions (Strategy & Examples) View HTML
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ECE 606 L18.3: Semiconductor Equations - Numerical Solutions View HTML
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ECE 606 L19.1: PN Junction - Structure and Depletion Region View HTML
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ECE 606 L19.2: PN Junction - Drawing Band-Diagrams in Equilibrium View HTML
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ECE 606 L20.1: PN Diode - Band Diagram with Applied Bias View HTML
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ECE 606 L20.2: PN Diode - Derivation of the Forward Bias Formula View HTML
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ECE 606 L20.3: PN Diode - Forward Bias - Non-Linear Regime View HTML
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ECE 606 L20.4: PN Diode - Non-Ideal Effects View HTML
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ECE 606 L21.1: PN Diode - Conductance and Series Resistance View HTML
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ECE 606 L21.2: PN Diode - Majority Carrier Junction Capacitance View HTML
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ECE 606 L21.3: PN Diode - Minority Carrier Diffusion Capacitance View HTML
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ECE 606 L22.1: PN Diode - Charge Control Model View HTML
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ECE 606 L22.2: PN Diode - Turn-Off and Turn-On Characteristics View HTML
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ECE 606 L22.3: PN Diode - Steady-State Expression From Charge Continuity View HTML
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ECE 606 L23.1: Schottky Diode - Basics View HTML
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ECE 606 L23.2: Schottky Diode - Physical Processes View HTML
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ECE 606 L23.3: Schottky Diode - Practical Issues View HTML
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ECE 606 L24.1 Bipolar Junction Transistor - Introduction View HTML
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ECE 606 L24.2: Bipolar Junction Transistor - Band Diagram in Equilibrium View HTML
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ECE 606 L24.3: Bipolar Junction Transistor - Currents in BJTs View HTML
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ECE 606 L24.4: Bipolar Junction Transistor - Ebers Moll Model View HTML
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ECE 606 L25.1: Bipolar Junction Transistor - Current Gain in BJTs View HTML
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ECE 606 L25.2: Bipolar Junction Transistor - Base Doping Design View HTML
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ECE 606 L25.3: Bipolar Junction Transistor - Collector Doping Design (Kirk Effect, Base Pushout) View HTML
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ECE 606 L25.4: Bipolar Junction Transistor - Emitter Doping Design View HTML
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ECE 606 L25.5: Bipolar Junction Transistor - Poly-Si Emitter View HTML
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ECE 606 L25.6: Bipolar Junction Transistor - Short Base Transport View HTML
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ECE 606 L26: Bipolar Junction Transistor - High-Frequency Response View HTML
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ECE 606 L27.1: Heterojunction Bipolar Transistor - Applications, Concept, Innovation, Nobel Prize View HTML
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ECE 606 L27.2: Heterojunction Bipolar Transistor - Heterojunction Equilibrium Solution View HTML
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ECE 606 L27.3: Heterojunction Bipolar Transistor - Types of Heterojunctions View HTML
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ECE 606 L27.4: Heterojunction Bipolar Transistor - Abrupt Junction HBTs View HTML
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ECE 606 L27.5: Heterojunction Bipolar Transistor - Graded Junction HBTs View HTML
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ECE 606 L27.6: Heterojunction Bipolar Transistor - Graded Base HBTs View HTML
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ECE 606 L27.7: Heterojunction Bipolar Transistor - Double Heterojunction HBTs View HTML
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ECE 606 L27.8: Heterojunction Bipolar Transistor - Modern Designs View HTML
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ECE 606 L28.1: MOS Electrostatics and MOScap - Background View HTML
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ECE 606 L28.2: MOScap - Band Diagram in Equilibrium and with Bias -->MOS cap View HTML
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ECE 606 L28.3: MOScap - Qualitative Q-V Characteristics of MOS Capacitor View HTML
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ECE 606 L28.4: MOScap - Induced Charges in Depletion and Inversion View HTML
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ECE 606 L28.5: MOScap - Exact Solution of the Electrostatic Problem View HTML
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ECE 606 L29.1: MOS Capacitor Signal Response - Introduction/Background View HTML
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ECE 606 L29.2: MOS Capacitor Signal Response - Small Signal Response View HTML
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ECE 606 L29.3: MOS Capacitor Signal Response - Large Signal Response View HTML
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ECE 606 L30.1: MOSFET Introduction - Sub-Threshold (Depletion) Current View HTML
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ECE 606 L30.2: MOSFET Introduction - Above-Threshold, Inversion Current View HTML
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ECE 606 L30.4: MOSFET Introduction - Comments on Bulk Charge Theory & Small Transistors View HTML
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ECE 606 L31.1: MOSFET Non-Idealities - Flat Band Voltage - What Is It and How to Measure It? View HTML
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ECE 606 L31.2: MOSFET Non-Idealities - Threshold Voltage Shift Due to Trapped Charges View HTML
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ECE 606 L31.3: MOSFET Non-Idealities - Physics of Interface Traps View HTML
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ECE 606 L32.1: Modern MOSFET - Some of Moore's Law Challenges View HTML
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ECE 606 L32.2: Modern MOSFET - Short Channel Effect View HTML
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ECE 606 L32.3: Modern MOSFET - Control of Threshold Voltage View HTML
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ECE 606 L32.4: Modern MOSFET - Mobility Enhancement View HTML
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