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MOS-C VFB Calculation: Comparison of Theoretical and Simulation Values
05 Feb 2012 | Contributor(s):: Stella Quinones
The flatband voltage is calulated based on device physics theory and is compared to the value determined from the simulation of a MOS-Capacitor using the MOSCap simulation tool on the nanoHUB.org website. By completing this exercise, the student is able to compare the mathematical model of the...
MOS-C VFB Calculation: Comparison of Theoretical and Simulation Values (Instructor Copy)
06 Apr 2006 | | Contributor(s):: Akira Matsudaira, Saumitra Raj Mehrotra, Shaikh S. Ahmed, Gerhard Klimeck, Dragica Vasileska
Capacitance of a MOS device