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Spintronics (a neologism meaning "spin transport electronics"), also known as magnetoelectronics, is an emerging technology that exploits the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, in solid-state devices. More information on spintronics can be found here.
SPICE Subcircuit Generator for Ferromagnetic Nanomaterials
05 Feb 2018 | Contributor(s):: Onur Dincer, Azad Naeemi
Generates SPICE subcircuit netlist for ferromagnetic nanometarials for spintronic devices
SPICE Subcircuit Generator for Spintronic Nonmagnetic Metallic Channel Components
11 Oct 2017 | Contributor(s):: Onur Dincer, Azad Naeemi
Generates SPICE subcircuit netlist for electronic and spintronic transport in nanoscale nonmagnetic metallic channels
Quantum Spins in the Solid-State: An Atomistic Material-to-Device Modeling Approach
30 Aug 2017 | | Contributor(s):: Rajib Rahman
In this talk, I will present an atomistic modeling approach that combines intrinsic material and extrinsic device properties under a unified framework to describe spins and their interactions with theenvironment. This approach captures important spin properties such as exchange, spin-orbit,...
Spin Transport Modeling Tool
21 Aug 2017 | | Contributor(s):: Onur Dincer, Azad Naeemi
Calculates spin transport parameters in nanoscale metallic interconnects.
Spin-Orbitronics: A Route to Control Magnets via Spin-Orbit Interaction
20 Jul 2017 | | Contributor(s):: Upadhyaya, Pramey
In this talk, I will present this “spin-orbitronic” control for various magnetic systems. In particular, we will focus on the example of spin-orbit-induced manipulation of magnetic domain walls and skyrmions, i.e. particle-like magnetic configurations capable of storing and...
Compact model for Perpendicular Magnetic Anisotropy Magnetic Tunnel Junction
12 Jul 2017 | Compact Models | Contributor(s):
By You WANG1, Yue ZHANG2, Jacques-Olivier Klein3, Thibaut Devolder3, Dafiné Ravelosona3, Claude Chappert3, Weisheng Zhao2
1. Institut Mines-Téléecom, Télécom-ParisTech, LTCI-CNRS-UMR 5141, Paris CEDEX 13, 75634, France 2. Spintronics Interdisciplinary Center, Beihang University, Beijing 100191, China 3. Institut d’Electronique Fondamentale, CNRS UMR 8622, University of Paris-Sud 11, 91405 Orsay, France
This STT PMA MTJ model integrates the physical models of static, dynamic behaviors and reliability issues, which can be used to perform more accurate and complex reliability analysis of complex...
Topological Spintronics: from the Haldane Phase to Spin Devices
27 Jan 2017 | | Contributor(s):: Nitin Samarth
e provide a perspective on the recent emergence of “topological spintronics,” which relies on the existence of helical Dirac electrons in condensed matter. Spin‐ and angle‐resolved photoemission spectroscopy shows how the spin texture of these electronic states can be engineered...
Valley Dependent g-factors in Silicon: Role of Spin-Orbit and Micromagnets
09 Dec 2016 | | Contributor(s):: Rajib Rahman
In this talk I will show that spin splittings in silicon quantum dots are inherently valley-dependent. Interface disorder, such as monoatomic steps, can strongly affect the intrinsic spin-orbit coupling and can cause device-to-device variations in g-factors. I will also describe the anisotropy...
Prospects for Using Magnetic Insulators in Spintronics
28 Sep 2016 | | Contributor(s):: Mingzhong Wu
This presentation consists of two parts, which together will provide some perspective on the future of using magnetic insulators in spintronics. The first part will touch on the feasibility of using magnetic insulators, in particular, Y3Fe5O12 and BaFe12O19, to produce pure spin currents...
Atomistic Modeling of Nano Devices: From Qubits to Transistors
12 Apr 2016 | | Contributor(s):: Rajib Rahman
In this talk, I will describe such a framework that can capture complex interactions ranging from exchange and spin-orbit-valley coupling in spin qubits to non-equilibrium charge transport in tunneling transistors. I will show how atomistic full configuration interaction calculations of exchange...
Ultrafast Optical Measurements of Spin Polarization in Semiconductors
29 Mar 2016 | | Contributor(s):: Vanessa Sih
n this talk, I will describe optical techniques that can measure the magnitude and direction of spin-orbit fields and electrically-generated spin polarization in non-magnetic semiconductors and the modification of the electron spin precession frequency in a bulk semiconductor using an applied...
Spin Lifetime Dependence on Valley Splitting in Thin Silicon Films
30 Sep 2015 | | Contributor(s):: Joydeep Ghosh, Dmitri Osintsev, Viktor Sverdlov, S. Selberherr
IWCE 2015 presentation. the electron spin properties are promising for future spin-driven devices. in contrast to charge, spin is not a conserved quantity, and having sufficiently long spin lifetime is critical for applications. silicon, the major material of microelectronics, also appears...