
CVcurves of a singlegate MOS capacitor
Closed  Responses: 10
t is well known that the threshold voltage shift in the semiconductor is affected by the workfunction of the gate material. Namely VG = MS. For n+ and p+ polysilicon gates that difference is...
https://nanohub.org/answers/question/2316

polysilicon doping concentration?
Closed  Responses: 0
How can I change the doping concentration of polysilicon gate?
https://nanohub.org/answers/question/1603

Reference voltage
Closed  Responses: 0
Hi,
I am investigating a system of two mos capacitors coupled in series for my master thesis work.
I would like to ask if double gate mos capacitor option in moscap matches...
https://nanohub.org/answers/question/1598

CV characteristic and transient analylsis?
Closed  Responses: 0
1 i want to know how to draw CV characteristic??
2 how to do transient analysis??
3 how to append several graphs on the same figure??
https://nanohub.org/answers/question/1306

How to change the semiconductor properties in the input if the default is silicon?
Closed  Responses: 0
I want to run this for a semiconductor other than Si, but not being able to find where to input the respective parameters for that (this might be straight forward, but I’m not sure where...
https://nanohub.org/answers/question/1067

Temperature dependence
Closed  Responses: 1
Can someone please explain to me the low frequency behavior of the CV curve at low temperature? Is the jumping around in depletion and inversion part of the underlying physics or is it a result...
https://nanohub.org/answers/question/984

Work Function/Flat Bias Adjustment?
Closed  Responses: 1
Hello,
I have been using the MOSCap application to solve a few problems. I have two questions:
1. Does the Threshold Voltage (VT) include flat band bias adjustment?
2. I am...
https://nanohub.org/answers/question/658

what happens in the deep depletion region?
Closed  Responses: 2
https://nanohub.org/answers/question/500

deep accumulation for small devices carrier density/availability of customizable PADRE
Open  Responses: 1
I have a question about the effectiveness of this tool in predicting carrier density for accumulation situations at say (5 V) for thin devices (23nm high k oxide) in the high frequency regime....
https://nanohub.org/answers/question/323

sir i need simulation which is based on my mathematical equation. Here we are just varying the variable and this simulator giving us result. can we do any changes any method for solving this ?
Open  Responses: 1
https://nanohub.org/answers/question/269

MOSCap: FirstTime User Guide
30 Mar 2009   Contributor(s):: SungGeun Kim, Benjamin P Haley, Gerhard Klimeck
This firsttime user guide provides an introduction to MOSCap. The MOSCap tool simulates the onedimensional (along the growth direction) electrostatics in typical single and dualgate MetalOxideSemiconductor device structures as a function of device size, geometry, oxide charge, temperature,...

Benjamin P Haley
Ben received his B.S. in Physics from Purdue in 1998. He worked for Cummins Engine Co and Intel before attending graduate school at UC Davis. He received a Masters in Engineering Applied Science in...
https://nanohub.org/members/17286

Shaikh S. Ahmed
Shaikh Shahid Ahmed is currently working as a Full Professor with the School of Electrical, Computer, and Biomedical Engineering at Southern Illinois University, Carbondale, IL, USA. Dr. Ahmed has...
https://nanohub.org/members/9293