MOSCap: First-Time User Guide
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Abstract
This first-time user guide provides an introduction to MOSCap. The MOSCap tool simulates the one-dimensional (along the growth direction) electrostatics in typical single and dual-gate Metal-Oxide-Semiconductor device structures as a function of device size, geometry, oxide charge, temperature, doping concentration and applied frequency. We also provide some basic definitions in this document.
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References
- Dragica Vasileska (2008), "MOS Capacitors Description"
- Dragica Vasileska (2008), "MOSFET Operation Description"
- Mark Lundstrom (2008), "ECE 612 Lecture 3: MOS Capacitors"
- S.-H. Lo, et. al., IBM Journal of Research and Development, volume 43, number 3, 1999
- Deal B. E., Electron Devices, IEEE Transactions on, 1980
PADRE - Dragica Vasileska; Gerhard Klimeck (2006), "Padre," DOI: 10254/nanohub-r941.3.
- http://nanohub.org/app/site/resources/2006/01/00941/154/index.html
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