The Stanford Virtual-Source Carbon Nanotube Field-Effect Transistors (VSCNFET) model is a semi-empirical compact model for CNFETs that captures the dimensional scaling properties and includes parasitic resistance, capacitance, and tunneling leakage currents. Inputs to the model are device design parameters such as gate length, gate oxide thickness, CNT diameter, and flat-band voltage. Experimental devices with the gate length down to 15 nm and numerical simulations based on the non-equilibrium Green’s function formalism are used for parameter extraction and model calibration. The model aims to assess the potentials of CNFET technology for the sub-10-nm technology nodes.

• Stanford Virtual-Source Carbon Nanotube Field-Effect Transistors Model 1.0.0 Verilog-A(VA | 25 KB)
• Stanford Virtual-Source Carbon Nanotube Field-Effect Transistors Model 1.0.0 Benchmarks(ZIP | 11 KB)
• Stanford Virtual-Source Carbon Nanotube Field-Effect Transistors Model 1.0.0 Parameters(TXT | 697 B )
• Stanford Virtual-Source Carbon Nanotube Field-Effect Transistors Model 1.0.0 Experimental Data(ZIP | 50 KB)
• Stanford Virtual-Source Carbon Nanotube Field-Effect Transistors Model 1.0.0 Manual(PDF | 2 MB)
• vscnfet_1_0_0_matlab_exerciser.zip(ZIP | 17 KB)
• vscnfet_1_0_0_qug.pdf(PDF | 663 KB)
• License terms

C.-S. Lee, E. Pop, A. Franklin, W. Haensch, and H.-S. P. Wong, “A Compact Virtual-Source Model for Carbon Nanotube Field-Effect Transistors in the Sub-10-nm Regime—Part I: Intrinsic Elements,” arXiv:1503.04397

C.-S. Lee, E. Pop, A. Franklin, W. Haensch, and H.-S. P. Wong, “A Compact Virtual-Source Model for Carbon Nanotube Field-Effect Transistors in the Sub-10-nm Regime—Part II: Extrinsic Elements and Performance Assessment,” arXiv:1503.04398

Researchers should cite this work as follows:

• Lee, C.; Wong, H. P. (2015). Stanford Virtual-Source Carbon Nanotube Field-Effect Transistors Model. nanoHUB. doi:10.4231/D38W3835S

  BibTex | EndNote

1. carbon nanotubes
2. CMOS Scaling
3. CNTFETs
4. Compact Model
5. MOSFET modeling