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ECE 606 Lecture 25: Modern MOSFETs
Online Presentations | 03 Dec 2012 | Contributor(s):: Gerhard Klimeck
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ECE 606 Lecture 22: MOScap Frequence Response/MOSFET I-V Characteristics
Online Presentations | 26 Nov 2012 | Contributor(s):: Gerhard Klimeck
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ECE 606 Lecture 23: MOSFET I-V Characteristics/MOSFET Non-Idealities
Online Presentations | 26 Nov 2012 | Contributor(s):: Gerhard Klimeck
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ECE 606 Lecture 24: MOSFET Non-Idealities
Online Presentations | 26 Nov 2012 | Contributor(s):: Gerhard Klimeck
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MIT Virtual-Source Tool
Tools | 07 Aug 2012 | Contributor(s):: Xingshu Sun, Xufeng Wang, Yubo Sun, Mark Lundstrom
Virtual Source Model for MOSFET compact modeling
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Nanoscale Transistors Lecture 11: MOSFET Limits and Possibilities
Online Presentations | 19 Jul 2012 | Contributor(s):: Mark Lundstrom
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MOSFET Design Calculations - Step 3
Teaching Materials | 01 Apr 2012 | Contributor(s):: Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...
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MOSFET Design Calculations - Step 3 (Instructor Copy)
Teaching Materials | 01 Apr 2012 | Contributor(s):: Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...
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Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Fast and Ultra-fast Characterization Methods (Part 1 of 3)
Online Presentations | 26 Mar 2012 | Contributor(s):: Souvik Mahapatra
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Negative Bias Temperature Instability (NBTI) in p-MOSFETs: The Impact of Gate Insulator Processes (Part 2 of 3)
Online Presentations | 25 Mar 2012 | Contributor(s):: Souvik Mahapatra
This presentation is part 2 on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner...
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Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Predictive Modeling (Part 3 of 3)
Online Presentations | 25 Mar 2012 | Contributor(s):: Souvik Mahapatra
This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner SiON...
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Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling
Courses | 25 Mar 2012 | Contributor(s):: Souvik Mahapatra
This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner SiON...
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MOSFET Design Simulation I
Teaching Materials | 06 Mar 2012 | Contributor(s):: Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...
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MOSFET Design Simulation I (Instructor Copy)
Teaching Materials | 06 Mar 2012 | Contributor(s):: Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...
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MOSFET Design Calculations - Step 2 (Instructor Copy)
Teaching Materials | 03 Mar 2012 | Contributor(s):: Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...
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MOSFET Design Calculations - Step 2
Teaching Materials | 03 Mar 2012 | Contributor(s):: Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...
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Silvaco Athena - Part 3
Teaching Materials | 05 Aug 2011 | Contributor(s):: Dragica Vasileska
This set of slides describes the fabrication of 100 nm channel length MOSFET device. At the end the formation of Bird's Beaks is discussed.
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MOSFET Lab Exercise: Series Resistance and Transistor Breakdown
Teaching Materials | 12 Jul 2011 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise is supposed to teach the students the role of the source and drain resistance on device output characteristics. The second portion of the assignment is supposed to train students how to simulate MOSFET operation near transistor breakdown.
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Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling (2011)
Online Presentations | 06 May 2011 | Contributor(s):: Souvik Mahapatra
This is a presentation on Negative Bias Temperature Instability, or in short NBTI, observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to...
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FETToy
Tools | 14 Feb 2006 | Contributor(s):: Anisur Rahman, Jing Wang, Jing Guo, Md. Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom
Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs