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ECE 612 Lecture 22: CMOS Circuit Essentials
Online Presentations | 24 Nov 2008 | Contributor(s):: Mark Lundstrom
Outline: 1) The CMOS inverter,2) Speed,3) Power,4) Circuit performance,5) Metrics,6) Limits.This lecture is an overview of CMOS circuits. For a more detailed presentation, the following lectures from the Fall 2006 teaching of this course should be viewed:Lecture 24: CMOS Circuits, Part I (Fall...
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ECE 612 Lecture 18B: CMOS Process Flow
Online Presentations | 18 Nov 2008 | Contributor(s):: Mark Lundstrom
For a basic, CMOS process flow for an STI (shallow trench isolation process), see: http://www.rit.edu/~lffeee/AdvCmos2003.pdf.This lecture is a condensed version of the more complete presentation (listed above) by Dr. Fuller.
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ECE 612 Lecture 20: Broad Overview of Reliability of Semiconductor MOSFET
Online Presentations | 14 Nov 2008 | Contributor(s):: Muhammad A. Alam
Guest lecturer: Muhammad A. Alam.
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ECE 612 Lecture 19: Device Variability
Online Presentations | 14 Nov 2008 | Contributor(s):: Mark Lundstrom
Outline:1) Sources of variability,2) Random dopantfluctuations (RDF),3) Line edge roughness (LER),4) Impact on design.
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ECE 612 Lecture 18A: CMOS Process Steps
Online Presentations | 12 Nov 2008 | Contributor(s):: Mark Lundstrom
Outline: 1) Unit Process Operations,2) Process Variations.
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Lecture 2: Thresholds, Islands, and Fractals
Online Presentations | 04 Nov 2008 | Contributor(s):: Muhammad A. Alam
Three basic concepts of the percolation theory – namely, percolation threshold, cluster size distribution, and fractal dimension – are defined and methods to calculate them are illustrated via elementary examples. These three concepts will form the theoretical foundation for discussion in Lecture...
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Lecture 1: Percolation in Electronic Devices
Online Presentations | 04 Nov 2008 | Contributor(s):: Muhammad A. Alam
Even a casual review of modern electronics quickly convinces everyone that randomness of geometrical parameters must play a key role in understanding the transport properties. Despite the diversity of these phenomena however, the concepts percolation theory provides a broad theoretical framework...
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ECE 612 Lecture 17: Gate Resistance and Interconnects
Online Presentations | 03 Nov 2008 | Contributor(s):: Mark Lundstrom
Outline:1) Gate Resistance,2) Interconnects,3) ITRS,4) Summary.
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Percolation Theory
Courses | 03 Nov 2008 | Contributor(s):: Muhammad A. Alam
The electronic devices these days have become so small that the number of dopant atoms in the channel of a MOFET transistor, the number of oxide atoms in its gate dielectric, the number silicon- or metal crystals in nanocrystal Flash memory, the number of Nanowires in a flexible nanoNET...
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ECE 612 Lecture 16: MOSFET Leakage
Online Presentations | 31 Oct 2008 | Contributor(s):: Mark Lundstrom
Outline:1) MOSFET leakage components,2) Band to band tunneling,3) Gate-induced drain leakage,4) Gate leakage,5) Scaling and ITRS,6) Summary.
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ECE 612 Lecture 15: Series Resistance (and effective channel length)
Online Presentations | 29 Oct 2008 | Contributor(s):: Mark Lundstrom
Outline:1) Effect on I-V,2) Series resistance components,3) Metal-semiconductor resistance,4) Other series resistance components,5) Discussion,6) Effective Channel Length,7) Summary.
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ECE 612 Lecture 14: VT Engineering
Online Presentations | 28 Oct 2008 | Contributor(s):: Mark Lundstrom
Outline: 1) VT Specification,2) Uniform Doping,3) Delta-function doping, xC = 0,4) Delta-function doping, xC > 0,5) Stepwise uniform,6) Integral solution.The doping profiles in modern MOSFETs are complex. Our goal is to develop an intuitive understanding of how non-uniform doping profiles affect...
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ECE 612 Lecture 12: 2D Electrostatics
Online Presentations | 28 Oct 2008 | Contributor(s):: Mark Lundstrom
Outline:1) Consequences of 2D electrostatics,2) 2D Poisson equation,3) Charge sharing model,4) Barrier lowering,5) 2D capacitor model,6) Geometric screening length,7) Discussion,8) Summary.
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ECE 612 Lecture 11: Effective Mobility
Online Presentations | 20 Oct 2008 | Contributor(s):: Mark Lundstrom
Outline:1) Review of mobility,2) “Effective”mobility,3) Physics of the effective mobility,4) Measuring effective mobility,5) Discussion,6) Summary.
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ECE 612 Lecture 8: Scattering Theory of the MOSFET II
Online Presentations | 08 Oct 2008 | Contributor(s):: Mark Lundstrom
Outline: 1) Review and introduction,2) Scattering theory of the MOSFET,3) Transmission under low VDS,4) Transmission under high VDS,5) Discussion,6) Summary.
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ECE 612 Lecture 7: Scattering Theory of the MOSFET I
Online Presentations | 08 Oct 2008 | Contributor(s):: Mark Lundstrom
Outline: 1) Review and introduction,2) Scattering theory of the MOSFET,3) Transmission under low VDS,4) Transmission under high VDS,5) Discussion,6) Summary.
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ECE 612 Lecture 6: MOSFET IV: Velocity saturation
Online Presentations | 07 Oct 2008 | Contributor(s):: Mark Lundstrom
Outline: 1) Review,2) Bulk charge theory (approximate),3) Velocity saturation theory,4) Summary.
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ECE 612 Lecture 5: MOSFET IV: Square law and bulk charge
Online Presentations | 07 Oct 2008 | Contributor(s):: Mark Lundstrom
Outline: 1) Introduction,2) Square law theory,3) PN junction effects on MOSFETs,4) Bulk charge theory (exact),5) Summary.
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Introductory Comments
Online Presentations | 29 Sep 2008 | Contributor(s):: Muhammad A. Alam
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Lecture 7: Connection to the Bottom Up Approach
Online Presentations | 23 Sep 2008 | Contributor(s):: Mark Lundstrom
While the previous lectures have been in the spirit of the bottom up approach, they did not follow the generic device model of Datta. In this lecture, the ballistic MOSFET theory will be formally derived from the generic model for a nano-device to show the connection explicitly.