Hello I use the Band structure Lab for simulation of characteristics circular NanoWire. According to 1-3 in the case of 100 and 111 SiNWs, tensile strain enhances the direct band gap characteristic, whereas compressive strain attenuates it, whereas with use the Band structure Lab compressive strain enhances the direct band gap characteristic and tensile strain attenuates it. I’m really dizzy. 1. K. Hong, J. Kim, S. Lee, and J. Shin, Nano Lett. 8, 1335 (2008). 2. P. Leu, A. Svizhenko, and K. Cho, Phys. Rev. B 77, 235305 (2008). 3. D. Shiri, Y. Kong, A. Buin, and M. Anantram, Appl. Phys. Lett. 93, 073114 (2008).