The presentation is a gentle introduction to compact models, basic circuit simulation concepts, and flows for developing compact models. The roadmap for the NEEDS-SPICE platform, being developed to ease the process of developing simulation-ready compact models for novel nanodevices, is briefly described.
NEEDS is charged to advance device science and to connect it with applications. A central focus is the development of physics-based compact models for novel nanodevices. A suite of compact models that encompass a wide variety of nanodevice physics is being developed. These models provide examples of how compact models can be grounded in fundamental physics and detailed simulations and validated by experiments. NEEDS models provide the community with a library of high-quality models; they serve as case studies and examples, and they drive the development of the NEEDS tools for developing simulation ready compact models.
NEEDS models are licensed with a version of the Compact Model Council (CMC) standard license and follow the CMC recommendations for versioning. Typical NEEDS model releases include: a Verilog-A model for downloading, a MATLAB version when available, a short manual, representative experimental data, references, supporting educational resources, and a parameter extractor (when available).
For a complete list of compact models, visit the NEEDS group
Jan 23, 2015 | Contributor(s): Hao Lu, Trond Ytterdal, Alan Seabaugh | doi:10.4231/D3901ZG9H
A universal TFET compact model implemented in verilog-A
Jan 19, 2015 | Contributor(s): David M. Bromberg, Daniel H. Morris | doi:10.4231/D3CR5ND3Q
This model is a hybrid physics/empirical compact model that describes digital switching behavior of an mCell logic devices, where a write current moves a domain wall to switch the resistance of a magnetic tunnel junction between stable states.
Nov 21, 2014 | Contributor(s): Colin McAndrew | doi:10.4231/D3QB9V64G
Compact model for polysilicon (poly) resistors, 3-terminal JFETs, and diffused resistors.
Nov 03, 2014 | Contributor(s): Piyush Dak, Muhammad A. Alam | doi:10.4231/D30000150
The FET pH sensor model is a surface potential compact model for FET based pH sensors that accurately describes the physics of electrolyte and surface charges that respond to pH.
We present a circuit/compact model for the Spin Switch created using a Verilog-A based library of "spintronic lego blocks" building upon previous works on spin transport.
Oct 23, 2014 | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D3H12V82S
The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.
Oct 23, 2014 | Contributor(s): Zizhen Jiang, H.-S. Philip Wong | doi:10.4231/D37H1DN48
The Stanford University RRAM Model is a SPICE-compatible compact model which describes switching performance for bipolar metal oxide RRAM.
This is the Verilog-A model of the magnetic tunnel junction developed by the Nanoelectronics Research Laboratory at Purdue University.
The TAG solar cell model is a physics-based compact model for p-i-n thin film solar cells that can be used for panel level simulations.
The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.
An RBT is a micro-electromechanical (MEM) resonator with a transistor (FET) incorporated into the resonator structure to sense the mechanical vibrations. The model is aimed to present a deep insight into the physics of the RBT.
Oct 22, 2014 | Contributor(s): Ujwal Radhakrishna, Dimitri Antoniadis | doi:10.4231/D3G15TC12
The MVS-G-RF GaN HEMT model is a self-consistent transport/capacitance model for scaled GaN HEMT devices used in RF applications.
Oct 22, 2014 | Contributor(s): Huichu Liu, Vinay Saripalli, Vijaykrishnan Narayanan, Suman Datta | doi:10.4231/D36H4CR3J
The III-V Tunnel FET Model is a look-up table based model, where the device current and capacitance characteristics are obtained from calibrated TCAD Sentaurus simulation.
Oct 22, 2014 | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D3MS3K273
This is a compact physics-based ambipolar-virtual-source (AVS) model that describes carrier transport in both unipolar and ambipolar regimes in quasi-ballistic graphene field-effect transistors (GFETs).