Stanford 2D Semiconductor (S2DS) Transistor Model 1.0.0
The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.
Listed in Compact Models | publication by group NEEDS: New Era Electronic Devices and Systems
Additional materials available
Version 1.0.0 - published on 23 Oct 2014 doi:10.4231/D3QJ78004 - cite this Last public release: 1.2.0
Licensed under NEEDS Modified CMC License according to these terms
Supporting Docs
- Stanford 2D Semiconductor (S2DS) Transistor Model 1.0.0 Verilog-A(VA | 22 KB)
- Stanford 2D Semiconductor (S2DS) Transistor Model 1.0.0 Benchmarks(ZIP | 65 KB)
- Stanford 2D Semiconductor (S2DS) Transistor Model 1.0.0 Parameters(ZIP | 264 KB)
- Stanford 2D Semiconductor (S2DS) Transistor Model 1.0.0 Experimental Data(ZIP | 113 KB)
- Stanford 2D Semiconductor (S2DS) Transistor Model 1.0.0 Manual(PDF | 1 MB)
NEEDS: New Era Electronic Devices and Systems
This publication belongs to the NEEDS: New Era Electronic Devices and Systems group.