Stanford 2D Semiconductor (S2DS) Transistor Model 1.2.0

By Saurabh Vinayak Suryavanshi1, Eric Pop1

Stanford University

The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.

Listed in Compact Models | publication by group NEEDS: New Era Electronic Devices and Systems

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Version 1.2.0 - published on 14 Aug 2018 doi:10.4231/D39882Q1F - cite this

Licensed under NEEDS Modified CMC License according to these terms

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The Stanford 2D Semiconductor (S2DS) model is a physics-based compact model for 2D field-effect transistors (FETs). The model relies on the drift-diffusion approach suitable for long channel devices, including quantum capacitance, simple band structure, high-field velocity saturation, contact resistance, and self-heating effects that are specific to 2D materials and 2D FETs. The model has been developed for double-gate devices and employs approximations to simplify integrals and enable compact modeling of 2D-FETs. The model is calibrated with state-of-the-art experimental data for n- and p-type 2D-FETs, and it can be used to analyse device properties for sub-100 nm gate lengths.

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