Stanford 2D Semiconductor Quasi-Ballistic Transistor Compact Model 1.0.0
The S2DSb compact model is based on MVS model and captures the quasi-ballistic transport in two-dimensional field effect transistors (2D FETs). It also includes a detailed device self-heating model and temperature effects for sub-10 nm 2D FETs.
Listed in Compact Models | publication by group NEEDS: New Era Electronic Devices and Systems
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Version 1.0.0 - published on 14 Aug 2018 doi:10.4231/D3F18SH56 - cite this
Licensed under NEEDS Modified CMC License according to these terms
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NEEDS: New Era Electronic Devices and Systems
This publication belongs to the NEEDS: New Era Electronic Devices and Systems group.
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Jeff Thorsen @ on
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Alex Dunn @ on
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Stanford 2D Semiconductor is an excellent study that is of great importance. This will help reduce the power consumption of modern computer technology. Such studies should receive more funding to be more effective. You can read these articles at the professional research paper writing service. This can be found at the website https://uk.papersowl.com/research-paper-writing-service. Reducing temperatures in processors is one of the main problems of modern technological development. The heat inside the semiconductors creates problems for compact computer engineering.
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