Stanford Virtual-Source Carbon Nanotube Field-Effect Transistors Model 1.0.1

By Chi-Shuen Lee1, H.-S. Philip Wong1

Stanford University

The VSCNFET model captures the dimensional scaling properties and includes parasitic resistance, capacitance, and tunneling leakage currents. The model aims for CNFET technology assessment for the sub-10-nm technology nodes.

Listed in Compact Models | publication by group NEEDS: New Era Electronic Devices and Systems

Additional materials available

Version 1.0.1 - published on 09 Apr 2015 doi:10.4231/D3BK16Q68 - cite this

Licensed under NEEDS Modified CMC License according to these terms

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