Stanford Virtual-Source Carbon Nanotube Field-Effect Transistors Model 1.0.1
The VSCNFET model captures the dimensional scaling properties and includes parasitic resistance, capacitance, and tunneling leakage currents. The model aims for CNFET technology assessment for the sub-10-nm technology nodes.
Listed in Compact Models | publication by group NEEDS: New Era Electronic Devices and Systems
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Version 1.0.1 - published on 09 Apr 2015 doi:10.4231/D3BK16Q68 - cite this
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NEEDS: New Era Electronic Devices and Systems
This publication belongs to the NEEDS: New Era Electronic Devices and Systems group.