ECE 695A Lecture 16: Temperature Dependence of HCI

By Muhammad Alam

Electrical and Computer Engineering, Purdue University, West Lafayette, IN

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Abstract

Outline:

  • Empirical observations regarding HCI
  • Theory of bond dissociation: MVE vs. RRK
  • Hot carrier dissociation of SiH bonds
  • Hot carrier dissociation of SiO bonds
  • Conclusions

Cite this work

Researchers should cite this work as follows:

  • Muhammad Alam (2013), "ECE 695A Lecture 16: Temperature Dependence of HCI," https://nanohub.org/resources/16920.

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Location

EE 226, Purdue University, West Lafayette, IN

Tags

  1. course lecture
  2. HCI
  3. nanoelectronics
  4. nanotransistors
  5. reliability
ECE 695A Lecture 16: Temperature Dependence of HCI
  • Lecture 16: Temperature dependence of HCI 1. Lecture 16: Temperature depend… 0
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  • copyright 2013 2. copyright 2013 65.598932265598933
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  • Outline 3. Outline 66.93360026693361
    00:00/00:00
  • Empirical observations (1) 4. Empirical observations (1) 208.3416750083417
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  • Empirical Observation (2) 5. Empirical Observation (2) 452.61928595261929
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  • Outline 6. Outline 545.11177844511178
    00:00/00:00
  • A model for HCI degradation 7. A model for HCI degradation 582.84951618284958
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  • HCI: Temperature dependence 8. HCI: Temperature dependence 698.66533199866535
    00:00/00:00
  • Dissociation by energy flow: What happened to activation of bond dissociation 9. Dissociation by energy flow: W… 751.81848515181855
    00:00/00:00
  • Dissociation of Si-H or Si-O bonds 10. Dissociation of Si-H or Si-O b… 898.3650316983651
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  • Bond dissociation: RRK Theory 11. Bond dissociation: RRK Theory 967.967967967968
    00:00/00:00
  • Bond dissociation at low voltages: Coherent Multi-Vibrational Excitation 12. Bond dissociation at low volta… 1441.7751084417753
    00:00/00:00
  • Outline 13. Outline 1727.0937604270939
    00:00/00:00
  • HCI T-Dependence: Si-H Dissociation 14. HCI T-Dependence: Si-H Dissoci… 1738.6720053386721
    00:00/00:00
  • Recall: Field dependence of HCI 15. Recall: Field dependence of HC… 1915.6823490156824
    00:00/00:00
  • Dissociation of SiH bonds 16. Dissociation of SiH bonds 2101.7684351017683
    00:00/00:00
  • SiH T-Dependence: MVE Theory 17. SiH T-Dependence: MVE Theory 2252.318985652319
    00:00/00:00
  • Outline 18. Outline 2288.455121788455
    00:00/00:00
  • Si-O bond dissociation 19. Si-O bond dissociation 2323.1564898231568
    00:00/00:00
  • Recall: Heating of Electrons 20. Recall: Heating of Electrons 2343.9439439439439
    00:00/00:00
  • Temp dependence of impact ionization 21. Temp dependence of impact ioni… 2419.8865532198865
    00:00/00:00
  • Recall: Rate of impact ionization 22. Recall: Rate of impact ionizat… 2475.408742075409
    00:00/00:00
  • Temp. Dependence of Impact Ionization 23. Temp. Dependence of Impact Ion… 2556.28962295629
    00:00/00:00
  • T-Dependent SiO dissociation: RRK Theory 24. T-Dependent SiO dissociation: … 2624.5912579245914
    00:00/00:00
  • If compensated, what about VT shift? 25. If compensated, what about VT … 2778.1114447781115
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  • The puzzle of VT shift 26. The puzzle of VT shift 2829.1958625291959
    00:00/00:00
  • Conclusions 27. Conclusions 3173.3733733733734
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  • References 28. References 3362.8962295628962
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